ALT6702 HELP4 UMTS PCS (Band 2) LTE/WCDMA/CDMA Multi-Mode PAM TM Data Sheet - Rev 2.5 FEATURES • Mixed-Mode HSPA, EVDO, LTE Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 39 % @ POUT = +28.6 dBm • 35 % @ POUT = +17.5 dBm • 23 % @ POUT = +13.5 dBm • 26 % @ POUT = +9 dBm • 13 % @ POUT = +3.5 dBm ALT6702 • Low Quiescent Current: 2 mA • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT port • Internal DC blocks on RF IN/OUT ports • Optimized for a 50 Ω System mode with low leakage current increase handset talk and standby time. A “daisy chainable” directional coupler is integrated in the module, thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Band 2 WCDMA/HSPA Wireless Devices • Band 2 LTE Wireless Devices GND at Slug (pad) • Band Class 1 and 14 CDMA/EVDO Wireless Devices • Band 25 LTE Devices PRODUCT DESCRIPTION The ALT6702 HELP4 TM PA is a 4th generation HELP TM product for LTE and WCDMA devices operating in UMTS PCS (Band 2) and for CDMA devices operating in Band Class 1 and Band Class 14. This PA incorporates ANADIGICS’ HELP4 TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown VBATT 1 RFIN 2 VMODE2 3 VMODE1 VEN 03/2012 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram ALT6702 VBATT 1 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT GND 10 Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 VMODE2 Mode Control Voltage 2 4 VMODE1 Mode Control Voltage 1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC PA Enable Voltage Coupler Output Supply Voltage Data Sheet - Rev 2.5 03/2012 VCC ALT6702 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VMODE2, VEN) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 1850 - 1915 MHz Supply Voltage (VCC) +3.1 +3.4 +4.35 V POUT < +28.6 dBm Enable Voltage (VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE1,VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V Low Bias Mode High Bias Mode WCDMA / UMTS Output Power (1, 3) R99, HPM HSPA (MPR=0), HPM (2) LTE R99, MPM (2) LTE & HSPA (MPR=0), MPM R99, LPM (2) LTE & HSPA (MPR=0), LPM 27.8 26.8 26.6 - 28.6 27.6 27.4 17.5 16.5 9.0 8.0 - CDMA Output Power (1, 3) HPM MPM LPM 27.2 - 28.0 16.5 8.0 Case Temperature (TC) -40 - dBm - dBm +90 °C COMMENTS 3GPP TS 34.121-1, Rel 8 Table C.11.1.3 for WCDMA, SUBTEST 1 TS 36.101 Rel 8 for LTE CDMA2000, RC-1 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For Operation at 3.1 V, POUT is derated by 0.8 dB. (2) LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK. (3) For Operation at +105 °C, POUT is derated by 1.0 dB. 3 Data Sheet - Rev 2.5 03/2012 ALT6702 Table 4: Electrical Specifications - LTE Operation = 10 MHz QPSK 12 RB (Start = 0) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT 25 16 8 27.5 19 10.5 30 22 13 ACLR E-UTRA at ± 10 MHz offset - -39 -39 -40 ACLR UTRA at ± 7.5 MHz offset - POUT VMODE1 VMODE2 dB POUT = +27.4 dBm POUT = +16.5 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -34 -34 -34 dBc POUT = +27.4 dBm POUT = +16.5 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -39 -40 -40 -36 -36 -36 dBc POUT = +27.4 dBm POUT = +16.5 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V - -59 -59 -60 -40 -40 -40 dBc POUT = +27.4 dBm POUT = +16.5 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V Power-Added Efficiency 31 26 19 34 30 23 - % POUT = +27.4 dBm POUT = +16.5 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V Ouiescent Current (Icq) Low Bias Mode - 2 3.5 mA through VCC pin 1.8 V 1.8 V Mode Control Current - 0.08 0.15 mA through VMODE pins, VMODE1,2 = +1.8 V Enable Current - 0.04 0.1 mA through VEN pin , VEN = +1.8 V BATT Current - 0.8 1.5 mA through VBATT pin, VMODE1,2 = +1.8 V Leakage Current - <5 8 µA VBATT = VCC = +4.35 V VEN = 0 V, VMODE1,2 = 0 V Noise Power - -135 -135 -146 -133 - Harmonics 2fo 3fo, 4fo - -44 -50 -35 -42 dBc Coupling Factor - 20 - dB Directivity - 20 - dB Coupler In_Out Daisy Chain Insertion Loss - <0.25 - dB 698 Mhz to 2620 MHz Pin 8 to 9, Shutdown Mode Gain ACLR UTRA at ± 12.5 MHz offset Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 1930 MHz to 1990 MHz dBm/Hz GPS Band ISM Band POUT ≤ +27.4 dBm - - <-70 dBc POUT < +27.4 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: 1. ACLR and Efficiency are measured at 1880 MHz. 4 COMMENTS Data Sheet - Rev 2.5 03/2012 ALT6702 Table 5: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system) MIN TYP MAX UNIT 25 16 8 27.5 19 10.5 30 22 13 ACLR1 at 5 MHz offset - -41 -43 -43 ACLR2 at 10 MHz offset - Power-Added Efficiency 35 31 22 - PARAMETER Gain Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 5 COMMENTS POUT VMODE1 VMODE2 dB POUT= +28.6 dBm POUT= +17.5 dBm POUT= +9 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -37.5 -37.5 -37.5 dBc POUT= +28.6 dBm POUT= +17.5 dBm POUT= +9 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -54 -55 -59 -48 -48 -48 dBc POUT= +28.6 dBm POUT= +17.5 dBm POUT= +9 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 39 35 23 26 13 - % POUT= +28.6 dBm POUT= +17.5 dBm POUT= +13.5 dBm POUT= +9 dBm POUT= +3.5 dBm 0V 1.8 V 1.8 V 1.8 V 1.8 V 0V 0V 0 V 1.8 V 1.8 V - - -70 dBc 8:1 - - VSWR Data Sheet - Rev 2.5 03/2012 POUT < +28.6 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range ALT6702 Table 6: Electrical Specifications - CDMA Operation (CDMA2000, RC-1) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER COMMENTS MIN TYP MAX UNIT 25 16 8 27.5 19 10.5 30 22 13 dB POUT = +28 dBm 0V POUT = +16.5 dBm 1.8 V POUT = +8 dBm 1.8 V 0V 0V 1.8 V Adjacent Channel Power at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -50 -56 -57 -46.5 -46.5 -46.5 dBc POUT = +28 dBm 0V POUT = +16.5 dBm 1.8 V POUT = +8 dBm 1.8 V 0V 0V 1.8 V Adjacent Channel Power at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -56 <-60 <-60 -53 -53 -53 dBc POUT = +28 dBm 0V POUT = +16.5 dBm 1.8 V POUT = +8 dBm 1.8 V 0V 0V 1.8 V 33 27 18 37 31 22 - % POUT = +28 dBm 0V POUT = +16.5 dBm 1.8 V POUT = +8 dBm 1.8 V 0V 0V 1.8 V - - -70 dBc 8:1 - - VSWR Gain Power-Added Efficiency Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 6 Data Sheet - Rev 2.5 03/2012 POUT VMODE1 VMODE2 POUT < +28 dBm, In-Band VSWR <5:1, Out-Of-Band VSWR <10:1 Applies to all operating conditions Applies over full operating range ALT6702 PERFORMANCE DATA PLOTS: (LTE Operation at 1880 MHz and 50 V system) 30 FigureFigure 3: LTE Gain over Temperature 4: LTE Gain(dB) (dB) over Temperature (Vbatt=VCC=3.4V) (VBATT = VCC = +3.4 V) Figure 4: LTE Gain (dB) over Voltage Figure 5: LTE Gain (dB) over Voltage (TC(Tc=25C = 25 8C) ) 30 -30C 3.4Vcc 25C 3.2Vcc 25C 3.4Vcc 25 25 90C 3.4Vcc 25C 4.2Vcc Gain (dB) 20 20 Gain (dB) 15 10 5 15 10 5 0 0 5 10 15 20 25 0 30 0 Pout (dBm) Figure 5: LTE PAE (%) over Temperature Figure 6: LTE PAE (%) over Temperature (VBATT = VCC = +3.4 V) (Vbatt=VCC=3.4V) 40 40 25C 3.4Vcc 90C 3.4Vcc 30 5 10 15 Pout (dBm) 20 25 30 Figure 6: LTE PAE (%) over Voltage Figure 7: LTE PAE (%) over Voltage (T(Tc=25C) C = 25 8C) 45 -30 3.4cc 35 25C 3.2Vcc 25C 3.4Vcc 35 25C 4.2Vcc 30 25 Efficiency (%) Efficiency (%) 25C 3.4Vcc 20 15 10 25 20 15 10 5 5 0 0 0 5 10 15 Pout (dBm) 20 25 0 30 Figure 7:Figure LTE8:ACLR1 (dBc) Temperature LTE ACRL1 (dBc)over over Temperature (VBATT (Vbatt=VCC=3.4V) = VCC = +3.4 V) -20 -20 5 10 15 Pout (dBm) 20 25 30 FigureFigure 8: LTE ACLR1 (dBc) over Voltage 9: LTE ACLR1 (dBc) over Voltage (TC(Tc=25C) = 25 8C) -30C 3.4Vcc -25 -25 25C 3.4Vcc -30 ACLR1 (5MHz dBc) ACLR1 (5MHz dBc) -30 -35 -40 -45 25C 4.2Vcc -35 -40 -45 -50 -50 -55 -55 0 7 25C 3.2Vcc 25C 3.4Vcc 90C 3.4Vcc 5 10 15 Pout (dBm) 20 25 30 -60 0 Data Sheet - Rev 2.5 03/2012 5 10 15 Pout (dBm) 20 25 30 ALT6702 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE pins. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At ~17dBm - 8 dBm, the PA could be switched to Medium Power Mode. For POUT levels < ~9 dBm, the PA could be switched to Low Power Mode for extremely low current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 7: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 VCC VBATT Low power (Low Bias Mode) < +9 dBm Low +1.8 V +1.8 V +1.8 V 3.1 - 4.35 V > 3.1 V Med power (Medium Bias Mode) > 8 dBm < +17 dBm Low +1.8 V +1.8 V 0V 3.1 - 4.35 V > 3.1 V High power (High Bias Mode) > +16 dBm High +1.8 V 0V 0V 3.1 - 4.35 V > 3.1 V - Shutdown 0V 0V 0V 3.1 - 4.35 V > 3.1 V Shutdown VVBATT BATT VCC C5 C5 2.2 µF 2.2 µF GND atGND slug at slug 1 2 RFIN RFIN C1 C1 0.1µF 0.1µF VMODE2 VMODE2 VMODE1 VMODE1 VEN VEN 3 4 5 C3 33pF 10 1 10 VBATT VBATT VCC VCC 9 2 IN 9 RF RFOUT RFIN VMODE2 3 VMODE2 VMODE1 4 VEN 5 CPLIN GND VMODE1 CPLOUT VEN RFOUT 8 CPLIN 7 6GND 8CPLIN 7 CPLOUT 6 Figure 9: Evaluation Board Schematic 8 Data Sheet - Rev 2.5 03/2012 VCC C3 C4 C2 C4C2 0.1µF ceramic2.2µF ceramic 0.1µF 33pF 2.2µF RFOUT RFOUT CPLIN CPLOUT CPLOUT ALT6702 PACKAGE OUTLINE Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY= Year WW= Work Week 6702R Part Number LLLLNN Lot Number YYWWCC Country Code(CC) Figure 11: Branding Specification - M45 Package 9 Data Sheet - Rev 2.5 03/2012 ALT6702 PCB AND STENCIL DESIGN GUIDELINE Figure 12: Recommended PCB Layout Information 10 Data Sheet - Rev 2.5 03/2012 ALT6702 COMPONENT PACKAGING Pin 1 Figure 13: Carrier Tape Figure 14: Reel 11 Data Sheet - Rev 2.5 03/2012 ALT6702 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION ALT6702RM45Q7 -40 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module ALT6702RM45P9 -40 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module COMPONENT PACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 Data Sheet - Rev 2.5 03/2012