Eon Silicon Solution Inc. Migration Note Eon Flash From To P/N EN29LV640T/B EN29LV640AT/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. Datasheet Version Rev. H Rev. B 1 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The migration note introduces how to implement a system design from Eon flash EN29LV640T/B to EN29LV640AT/B. 2. GENERAL FUNCTION COMPARISON TABLE: The following table is major features of these two devices. Features Voltage Range Pin to Pin Access Time EN29LV640T/B EN29LV640AT/B 2.7V ~ 3.6V 48-pin TSOP (Type 1) 48-ball 6mm x 8mm TFBGA - Full voltage range (2.7V~3.6V): Access times as fast as 90 ns - Regulated voltage range (3.0V~3.6V): Access times as fast as 70ns 2.7V ~ 3.6V 48-pin TSOP (Type 1) 48-ball 6mm x 8mm TFBGA 90ns Sector Architecture Secured Silicon Sector Byte/Word Mode VID and VHH Range Erase Suspend/Resume 8K-byte x8 32K-Word/64K-byte x127 8K-byte x8 32K-Word/64K-byte x127 N/A 128-Word/256-byte x1 Yes Yes 10.5V – 11.5V 8.5V – 9.5V Yes Yes Minimum Endurance Cycle 100K 100K 48-pin TSOP (Type 1) 48-ball 6mm x 8mm TFBGA 48-pin TSOP (Type 1) 48-ball 6mm x 8mm TFBGA Package This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1. ICC Comparison Current EN29LV640T/B EN29LV640AT/B Unit Typ Max Typ Max Read ICC1 9 16 9 16 mA Write ICC2 20 30 20 30 mA Standby ICC3 1 5.0 1 5.0 μA Note：There is no difference between EN29LV640T/B and EN29LV640AT/B. 3.2. Pin Descriptions Pin Name A0-A21 DQ0-DQ14 DQ15 / A-1 CE# OE# WE# WP# / ACC RESET# BYTE# RY/BY# Vcc Vss NC EN29LV640T/B Function 22 Address inputs 15 Data Inputs/Outputs DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) Chip Enable Output Enable Write Enable Write Protect / Acceleration Pin Hardware Reset Pin Byte/Word Mode Selection Ready/Busy Output Supply Voltage (2.7-3.6V) Ground Not Connected to anything EN29LV640AT/B Pin Name Function A0-A21 22 Address inputs DQ0-DQ14 15 Data Inputs/Outputs DQ15 (data input/output, word mode), DQ15 / A-1 A-1 (LSB address input, byte mode) CE# Chip Enable OE# Output Enable WE# Write Enable WP# / ACC Write Protect / Acceleration Pin RESET# Hardware Reset Pin BYTE# Byte/Word Mode Selection RY/BY# Ready/Busy Output Vcc Supply Voltage (2.7-3.6V) Vss Ground NC Not Connected to anything Note：There is no difference between EN29LV640T/B and EN29LV640AT/B. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. 4. Autoselect Codes (Using High Voltage, VID) 64M FLASH MANUFACTURER/DEVICE ID TABLE Description CE# OE# WE# Manufacturer ID: Eon L L H Device Word ID (top boot Byte sector) L L H L L H Device Word ID L L H (bottom boot sector) L L H Byte Sector Protection Verification A21 A11 A5 DQ8 to to A9 2 A8 A7 A6 to A1 A0 to A12 A10 A2 DQ15 X X V ID X X V ID X L L H SA X X B B V ID B V ID B DQ7 to DQ0 P P H1 P B B B B L X X X P X L X L L X L X L H X X L L X X L H 1Ch X 7Fh 22h C9h X C9h 22h CBh X CBh H L X X 01h (Protected) 00h (Unprotected) L=logic low= VIL, H=Logic High= VIH, VID = 9 ± 0.5V, X=Don’t Care (either L or H, but not floating!), SA=Sector Addresses Note: 1. A8 = H is recommended for Manufacturing ID check. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh. A9 must be ≤ Vcc (CMOS logic level) for 2. A9 = VID is for HV A9 Autoselect mode only. Command Autoselect Mode. 3. There is no difference between EN29LV640T/B and EN29LV640AT/B. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. 5. SOFTWARE CONSIDERATIONS 5.1. 64M FLASH SECURED SILICON SECTOR TABLE 1 P Description CE# OE# WE# P A21 A11 A5 DQ8 to to to A92 A8 A7 A6 to A1 A0 A12 A10 A2 DQ15 P DQ7 to DQ0 Secured Silicon L X H L X X L V ID X X V ID X X Sector Lock 3 Secured X1h Silicon (Locked) Sector L X H L X L L H X X V ID X X Lock Bit X0h Verification (Unlocked) 3 (DQ0) L=logic low= VIL, H=Logic High= VIH, VID = 9 ± 0.5V, X=Don’t Care (either L or H, but not floating!), SA=Sector Addresses B P B B B B B P P P Note: 1. 64M FLASH SECURED SILICON SECTOR TABLE is valid only in Secured Silicon Sector which exists at EN29LV640AT/B. A9 must be ≤ Vcc (CMOS logic level) for 2. A9 = VID is for HV A9 Autoselect mode only. Command Autoselect Mode. 3. AC Waveform for Secured Silicon Sector Lock / Verification Operations Timings. VID Vcc 0V 0V tVIDR tVIDR A6, A1, A0 Valid Valid Valid Secured Silicon Sector Lock Valid Verify >0.4μs >1μs Lock : 150μs VID This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. 5.1.1. Top Boot Security Sector Address Table Sector Address A21 ~ A12 Sector Size (bytes / words) Address Range (h) Byte Mode (x8) Address Range (h) Word Mode (x16) 1111111111 256 / 128 7FFF00–7FFFFF 3FFF80–3FFFFF 5.1.2. Bottom Boot Security Sector Address Table Sector Address A21 ~ A12 Sector Size (bytes / words) Address Range (h) Byte Mode (x8) Address Range (h) Word Mode (x16) 0000000000 256 / 128 000000–0000FF 000000–00007F This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. Command Sequence Cycles 5.2. Command Definitions Bus Cycles stP Read 1 RA RD Reset 1 XXX F0 Word 555 Manufacturer ID 4 Autoselect Byte Device ID Top Boot Device ID Bottom Boot Word Byte Word Byte 4 4 Byte 4 Word Chip Erase 6 Byte Word Byte Sector Erase 6 AA 555 AAA 555 AAA 555 AAA XXX 30 Enter Secured Silicon Sector* Exit Secured Silicon Sector* 3 4 55 2AA 555 2AA 555 AA 1 AA 555 AAA 555 AAA 2AA 555 AA Sector Erase Resume 1 55 555 AAA 555 AAA 90 90 555 55 AA B0 Word 55 555 XXX 90 AAA 2AA AA 1 Byte Word Byte Word Byte 555 2AA 555 2AA 555 AA Sector Erase Suspend CFI Query 2AA 55 AAA Byte 3P Cycle Addr Data 555 555 4 Word Program 555 AAA 555 AAA rdP 2P Cycle Addr Data AA AAA Word Sector Protect Verify ndP 1P Cycle Addr Data 90 AAA 55 55 55 555 A0 AAA 555 80 AAA 555 AAA 80 thP 4P Cycle Addr Data 000 100 000 200 x01 x02 x01 x02 (SA) X02 (SA) X04 PA 555 AAA 555 AAA thP thP 5P Cycle Addr Data 6P Cycle Addr Data 2AA 555 7F 1C 7F 1C 22C9 C9 22CB CB 00 01 00 01 08* PD AA AA 55 555 2AA 555 55 AAA SA 98 2AA 555 2AA 555 AA AA 55 55 555 AAA 555 AAA 88 90 xxx xxx 00 00 Address and Data values indicated are in hex. Unless specified, all bus cycles are write cycles RA = Read Address: address of the memory location to be read. This is a read cycle. RD = Read Data: data read from location RA during Read operation. This is a read cycle. PA = Program Address: address of the memory location to be programmed. X = Don’t-Care PD = Program Data: data to be programmed at location PA SA = Sector Address: address of the Sector to be erased or verified. Address bits A20-A12 uniquely select any Sector. Note： * Only available at EN29LV640AT/B. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com 10 30 Eon Silicon Solution Inc. 6. PERFORMANCE DIFFERENCES 6.1. Power-On and Hardware Reset (RESET#) Timings Parameter Description tVCS Vcc Setup Time RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 EN29LV640T/B EN29LV640AT/B 50µs 50µs 10us 10µs 500ns 500ns 50ns 50ns 0ns 0ns 50ns 50ns 20µs 20µs 500ns 500ns 6.2. ERASE AND PROGRAM PERFORMANCE The ERASE and PROGRAM Performance Comparison EN29LV640T/B Typ Max Parameter EN29LV640AT/B Typ Max Unit Sector Erase Time 0.1 2 0.1 2 sec Chip Erase Time 16 140 16 140 sec Byte Programming Time 8 200 8 200 µs Word Programming Time 8 200 8 200 µs Accelerated Byte/Word Program Time 7 120 7 200 µs Byte 67.2 201.6 67.2 201.6 sec Word 33.6 100.8 33.6 100.8 sec Chip Programming Time Word Programming Time 100K 100K Cycles Notes: 1. Typical program and erase times assume the following conditions: room temperature, 3V and checkerboard pattern programmed. 2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/08/09 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2010 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 08/09 www.eonssi.com