2SK435 Silicon N-Channel Junction FET REJ03G0812-0200 (Previous ADE-208-1171) Rev.2.00 Aug.10.2005 Application Low frequency / High frequency amplifier Outline RENESAS Package code: PRSS0003DB-C (Package name: TO-92 (2)) 1. Drain 2. Source 3. Gate 3 2 Rev.2.00 Aug 10, 2005 page 1 of 5 1 2SK435 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IG Pch Tch Tstg Ratings 22 –22 100 10 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to source breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Symbol V(BR)GSS IGSS VGS(off) IDSS*1 |yfs| Min –22 — — 12 20 Typ — — — — — Max — –10 –2.5 30 — Unit V nA V mA mS Input capacitance Ciss — 9.0 11.0 pF VDS = 5 V, VGS = 0, f = 1MHz Reverse transfer capacitance Crss — 2.8 4.0 pF VDS = 5 V, VGS = 0, f = 1MHz NF — 0.5 3.0 dB VDS = 5 V, ID = 1 mA, f = 1kHz, Rg = 1kΩ Noise figure Note: 1. The 2SK435 is grouped by IDSS as follows. Grade IDSS C 12 to 22 Rev.2.00 Aug 10, 2005 page 2 of 5 D 18 to 30 Test conditions IG = –10 µA, VDS = 0 VGS = –15 V, VDS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 mA, f = 1kHz 2SK435 Typical Output Characteristics Maximum Channel Dissipation Curve 20 Drain Current ID (mA) VGS = 0V 300 200 100 0 Drain Current ID (mA) 20 50 150 100 −1.0 −0.75 −0.5 −0.25 2 4 6 8 10 VDS = 5 V f = 1 kHz 10 1.0 0.1 0.1 0 1.0 10 100 Gate to Source Voltage VGS (V) Drain Current ID (mA) Forwaed Transfer Admittance vs. Gate to Source Voltage Gate Cutoff Current vs. Gate to Source Voltage 50 1,000 VDS = 5 V f = 1 kHz Gate Cutoff Current IGSS (pA) Forward Transfer Admittance ⏐yfs⏐ (mS) −0.5 −0.6 4 100 4 30 20 10 0 −0.4 Forward Transfer Admittance vs. Drain Current 8 −1.25 −0.3 8 Typical Transfer Characteristics 12 40 −0.2 12 Drain to Source Voltage VDS (V) 16 0 −0.1 Ambient Temperature Ta (°C) VDS = 5 V −1.25 16 0 200 Forward Transfer Admittance ⏐yfs⏐ (mS) Channel Power Dissipation Pch (mW) 400 −1.0 −0.75 −0.5 −0.25 Gate to Source Voltage VGS (V) Rev.2.00 Aug 10, 2005 page 3 of 5 VDS = 0 100 10 1.0 0.1 0 0 −10 −20 −30 −40 Gate to Source Voltage VGS (V) −50 2SK435 Input Capacitance vs. Drain to Source Voltage Reverse Transfer Capacitance Crss (pF) Input Capacitance Ciss (pF) 100 Reverse Transfer Capacitance vs. Drain to Source Voltage f = 1 MHz VGS = 0 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2 5 10 100 20 10 5 2 1 0.1 Drain to Source Voltage VDS (V) 0.5 2 1.0 5 10 Noise Figure vs. Frequency 12 12 VDS = 5 V ID = 1mA f = 1 kHz 10 8 6 4 2 100 1k 10 k Signal Source Resistance Rg (Ω) Rev.2.00 Aug 10, 2005 page 4 of 5 100 k Noise Figure NF (dB) Noise Figure NF (dB) 0.2 Drain to Source Voltage VDS (V) Noise Figure vs. Signal Source Resistance 0 10 f = 1 MHz VGS = 0 50 VDS = 5 V ID = 1mA Rg = 1 kΩ 10 8 6 4 2 0 10 100 1k Frequency f (Hz) 10 k 100 k 2SK435 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-43A PRSS0003DA-C TO-92(2) / TO-92(2)V 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.5 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SK435CTZ 2SK435DTZ Quantity 2500 2500 Shipping Container Radial taping, Hold box Radial taping, Hold box Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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