2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SK213 Ratings 140 2SK214 2SK215 Unit V 160 180 2SK216 VGSS 200 ±15 V ID IDR 500 500 mA mA Channel dissipation Pch 1 Pch* 1.75 30 W W Channel temperature Storage temperature Tch Tstg 150 –45 to +150 °C °C Gate to source voltage Drain current Body to drain diode reverse drain current Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown 2SK213 voltage 2SK214 2SK215 Symbol V(BR)DSX Min 140 Typ — Max — Unit V Test conditions ID = 1 mA, VGS = –2 V 160 180 — — — — V V — — — — V V IG = ±10 µA, VDS = 0 2SK216 Gate to source breakdown voltage V(BR)GSS 200 ±15 Gate to source voltage Drain to source saturation voltage VGS(on) VDS(sat) 0.2 — — — 1.5 2.0 V V ID = 10 mA, VDS = 10 V * 2 ID = 10 mA, VGD = 0 * Forward transfer admittance Input capacitance |yfs| Ciss 20 — 40 90 — — mS pF Reverse transfer capacitance Crss — 2.2 — pF ID = 10 mA, VDS = 20 V * ID = 10 mA, VDS = 10 V, f = 1 MHz Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 2 2 2SK213, 2SK214, 2SK215, 2SK216 Main Characteristics Power vs. Temperature Derating Typical Output Characteristics 500 Drain Current ID (mA) 40 20 0 100 150 3.5 TC = 25°C 3.0 400 2.5 300 2.0 200 1.5 100 0 1.0 VGS = 0.5 V 4 8 12 16 20 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 0.8 0.7 30 0.6 0.5 20 0.4 10 0.3 0.2 400 =– 40 VDS = 20 V 25 ° C 25 75 500 TC = 25°C TC Drain Current ID (mA) 50 50 Drain Current ID (mA) Channel Dissipation Pch (W) 60 300 200 100 VGS = 0.1 V 40 60 80 100 1 2 3 4 Drain to Source Voltage VDS (V) Gate Source Voltage VGS (V) Typical Transfer Characteristics Forward Transfer Admittance vs. Drain Current VDS = 20 V 80 60 40 20 0 0 0.4 0.8 1.2 1.6 Gate Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 5 2.0 Forward Transfer Admittance yfs (mS) Drain Current ID (mA) 100 20 TC = –25 °C 25 75 0 5 200 100 50 20 10 TC = 25°C VDS = 20 V 5 2 5 10 20 50 100 200 Drain Current ID (mA) 2SK213, 2SK214, 2SK215, 2SK216 Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Frequency 500 100 10 TC = 25°C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 100 k 1M 10 M Frequency f (HZ) Rev.2.00 Sep 07, 2005 page 4 of 5 50 M 2SK213, 2SK214, 2SK215, 2SK216 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name Quantity Shipping Container 2SK213-E 2SK214-E 500 pcs 500 pcs Box (Sack) Box (Sack) 2SK215-E 2SK216-E 500 pcs 500 pcs Box (Sack) Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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