VISHAY TSKS5400_08

TSKS5400
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: side view lens
• Dimensions (L x W x H in mm): 5 x 2.65 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
14354-1
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
DESCRIPTION
• Good spectral matching with Si photodetectors
The TSKS5400-FSZ is an infrared, 950 nm emitting diode in
GaAs technology with high radiant power, molded in a clear
plastic package.
• Package matched with detector TEKS5400
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Photointerrupters
• Transmissive sensors, gap sensors
• Reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
TSKS5400-FSZ
4.5
± 30
950
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSKS5400-FSZ
PACKAGING
REMARKS
PACKAGE FORM
Tape and ammopack
MOQ: 2000 pcs, 2000 pcs/ammopack
Side view lens
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
6
V
Forward current
IF
100
mA
tp ≤ 100 µs
Surge forward current
UNIT
IFSM
2
A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 25 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
270
K/W
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 83780
Rev. 2.3, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
215
TSKS5400
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 270 K/W
80
60
40
100
80
60
RthJA = 270 K/W
40
20
20
0
0
0
10
21321
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21322
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
TEST CONDITION
SYMBOL
Forward voltage
PARAMETER
IF = 100 mA, tp ≤ 20 ms
VF
Reverse voltage
IR = 10 µA
VR
IF = 100 mA
TKVF
- 1.3
mV/K
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
Temperature coefficient of VF
Junction capacitance
MIN.
TYP.
MAX.
1.3
1.7
UNIT
V
6
V
Radiant intensity
IF = 100 mA, tp ≤ 20 ms
Ie
Radiant power
IF = 50 mA, tp ≤ 20 ms
φe
10
mW
IF = 50 mA
TKφe
- 0.8
%/K
ϕ
± 30
deg
Peak wavelength
IF = 50 mA
λp
950
nm
Spectral bandwidth
IF = 50 mA
Δλ
50
nm
IF = 100 mA
tr
800
ns
IF = 1 A, tp/T = 0.01, tp ≤ 10 µs
tr
450
ns
Temperature coefficient of φe
Angle of half sensitivity
Rise time
2
4.5
7
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 4
1.5
V F - Forward Voltage
I F - Forward Current (mA)
1.4
I F = 10 mA
10 3
10 2
10 1
10 0
10 -1
0
94 7996
1
2
3
Fig. 3 - Pulse Forward Current vs. Forward Voltage
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216
1.2
1.1
1.0
0.9
0.8
-45 -30 -15
4
V F - Forward Voltage (V)
1.3
14347
0
15
30 45 60 75 90
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 83780
Rev. 2.3, 05-Sep-08
TSKS5400
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
1.25
Φe rel - Relative Radiant Power
Ie - Radiant Intensity (mw/sr)
100
10
1
t p /T = 0.001
t p = 100 µs
0.1
0.01
10 0
10 1
10 2
10 3
0.75
0.5
0.25
IF = 100 mA
0
900
10 4
I F - Forward Current (mA)
94 7913
1.0
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
I e rel - Relative Radiant Intensity
0°
Φ e - Radiant Power (mW)
100
10
1
1000
950
λ - Wavelength (nm)
94 7994
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
1
10
100
1000
I F - Forward Current (mA)
13718
Fig. 6 - Radiant Power vs. Forward Current
0.6
0.4
0.2
0
0.2
0.4
0.6
14349
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
1.6
I F = 10 mA
1.4
I e rel; Φe
rel
1.2
1.0
0.8
0.6
0.4
0.2
0.0
- 45 - 30 - 15
14348
0
15 30 45 60 75 90
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Document Number: 83780
Rev. 2.3, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
217
TSKS5400
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
PACKAGE DIMENSIONS in millimeters
14345
www.vishay.com
218
For technical questions, contact: [email protected]
Document Number: 83780
Rev. 2.3, 05-Sep-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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