EMF8 Transistors Power management (dual transistors) EMF8 2SC5585 and DTC144EE are housed independently in a EMT6 package. zStructure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol : F8 zEquivalent circuits (3) ROHM : EMT6 (3) (4) (6) 0.13 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 zExternal dimensions (Unit : mm) zApplication Power management circuit (1) Tr1 R1 R2 (4) (5) (6) R1=47kΩ R2=47kΩ zPackage, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF8 EMT6 F8 T2R 8000 Rev.A 1/4 EMF8 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55 to +150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. DTr2 Parameter Symbol Limits VCC 50 Supply voltage VIN −10 to +40 Input voltage IC 100 Collector current IO 30 Output current PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55 to +150 Range of storage temperature Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 − − − 270 − − Typ. − − − − − 100 − 320 7.5 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 68 Typ. − − 100 − − − Max. 0.5 − 300 180 500 − Unit V V mV µA nA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA fT − 250 − MHz VCE=10V, IE= −5mA, f=100MHz ∗ R1 R2/R1 32.9 0.8 47 1.0 61.1 1.2 kΩ − − − DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio ∗Characteristics of built-in transistor. Rev.A 2/4 EMF8 Transistors 0 0.2 DC CURRENT GAIN : hFE Ta= −40° C Ta=25° C 0.4 0.6 0.8 1.0 1.2 10 1 1.4 1 10 100 Ta=125°C 25°C −40°C 10 1 10 100 1000 1000 1000 IC/IB=20 Pulsed Ta=25°C 1000 Ta=−40°C Ta=125°C 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 10000 IC/IB=20 Pulsed BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=−40°C 100 BASE TO EMITTER VOLTAGE : VBE (V) 1000 Fig.2 DC current gain vs. collector current Ta=25°C Fig.5 Base-emitter saturation voltage vs. collector current 1000 Ta=25°C Pulsed 100 IC/IB=50 10 IC/IB=20 IC/IB=10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) 1 VCE=2V Pulsed Ta=125°C 100 10 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Pulsed Ta=12 5°C COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectrical characteristic curves Tr1 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 EMF8 Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1