AN 6147 - Dynex Semiconductor Ltd.

AN 6147
Use of rectifier diodes at
elevated temperatures for
short term overloads
Application Note
AN6147-1 May 2014 LN31596
Author: Colin Rout
Introduction:
Use of rectifier diodes at elevated
temperatures
Many of the characteristics of a rectifier diode
are temperature dependent, but for modest
increases in junction temperature many of
these changes are insignificant. However the
leakage current will approximately double for
every 10°C rise in junction temperature as
illustrated in figure 1.
This increase in leakage current combined
with the repetitive voltage VRRM will result in
increased power dissipation and potential
thermal run-away of the equipment. By
reducing the repetitive voltage the power
dissipation during reverse blocking can be
reduced to an acceptable level and the
equipment allowed to ride out the overload
without any problems. In this Application
Note a method of estimating voltage derating is outlined.
4
3.5
Leakage current normalised to 175°C, - ( pu )
In many applications the rating of the
semiconductor is determined by the overload
conditions rather than the normal continuous
running operation. If the overload condition is
of a short duration, of the order of one
minute, then rectifier diodes can be operated
at above their maximum rated junction
temperature as long as the repetitive voltage
is reduced.
4.5
3
2.5
2
1.5
1
0.5
0
100 110 120 130 140 150 160 170 180 190 200 210
Junction temperature, T j - ( °C)
Fig. 1 Leakage current vs junction
temperature
Fig. 2 shows the typical effect of voltage on
leakage current. The leakage current is
reduced by 50% if the voltage is reduced to
75% of VRRM. Thus we can see that if the
junction temperature approaches 190°C but
we keep the VxI product constant by reducing
the voltage to 75% of VRRM, the power
dissipation will remain constant.
By combining Figure 1 with the inverse of
figure 2 we obtain the useful graph given in fig
3. Voltage blocking of 50% VRRM at 200° has
been verified in the laboratory.
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AN 6147
1
Normalised Leakge current to 100% V RRM, - ( pu )
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
Percentage of V RRM, (%)
80
100
Fig.2 Leakage current vs % of the repetitive voltage VRRM
5
Normalised leakage current, I RRM - (pu)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210
Junction temperature, T j - ( °C )
Required percentage of V
RRM
Fig3. Required percentage of VRRM for rectifier junction temperatures above 175°C
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AN 6147
Unfortunately, stored charge is a strong
function of temperature as shown in fig.4 so
Normalised Stored Charge Value
1.4
1.2
1
0.8
0.6
0.4
0.2
0
100
120
140
160
180
200
Virtual Junction Temperature, Tvj - (oC)
Fig 4 Stored Charge against Junction Temperature
the reverse recovery losses and the voltage
overshoot during reverse recovery will also
increase so the snubber design should be
reviewed to ensure that the diode is still
operating within safe limits. Forward voltage
drop may also increase. This can be seen by
observing the cross-over point of the VF
characteristics in the datasheet compared to
the operating current. A linear extrapolation
of the interval between the datasheet curves
will give a reasonable approximation.
These additional increases in conduction and
recovery losses may mean that VRRM has to be
further reduced to maintain device thermal
stability.
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AN 6147
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Technical Documentation – Not for resale.