DSF21545SV DSF21545SV Fast Recovery Diode DS4153- JXO\ (LN31805) APPLICATIONS KEY PARAMETERS VRRM 4500V IF(AV) 3230A IFSM 20000A Qr 1800µC trr 7.0µs ■ The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers. FEATURES ■ The DSF21545SV is designed for fast turn-on thus minimising reverse current through the GTO. ■ Low recovered charge for low losses. ■ DSF21545SV is housed in a similar outline to that of the DG858BW therefore offering complete mechanical compatibility for parallel and series clamping. VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DSF21545SV45 4500 Conditions VRSM = VRRM + 100V Lower voltage grades available. Outline type code: V. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 3230 A IF(RMS) RMS value Tcase = 65oC 5080 A Continuous (direct) forward current Tcase = 65oC 4680 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 2070 A IF(RMS) RMS value Tcase = 65oC 3255 A Continuous (direct) forward current Tcase = 65oC 2875 A IF 1/8 DSF21545SV SURGE RATINGS Symbol IFSM I2t IFSM I2t IFSM I2t Conditions Parameter Max. Units 20 kA 2.0 x 106 A2s 16 kA 1.28 x 106 A2s - kA - A2s Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 100% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Symbol Conditions Parameter Double side cooled Rth(j-c) Thermal resistance - junction to case Min. Max. Units dc - 0.0075 o Anode dc - 0.015 o Cathode dc - 0.015 o Double side - 0.002 o Single side - 0.004 o - 150 o o C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 35.0kN with mounting compound C/W C/W C/W Tvj Virtual junction temperature Tstg Storage temperature range -55 150 Clamping force 34 48 kN Typ. Max. Units - On-state (conducting) C C CHARACTERISTICS Symbol Conditions VFM Forward voltage At 3000A peak, Tcase = 25oC - 2.0 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 150 mA 7.0 - µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 1800 µC IRM Reverse recovery current Tcase = 150oC, VR = 100V - 500 A K Soft factor 2 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.25 V rT Slope resistance At Tvj = 150oC - 0.25 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 75 V VFRM 2/8 Parameter DSF21545SV DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR CURVES 5000 Measured under pulse conditions Instantaneous forward current IF - (A) 4000 3000 2000 Tj = 25˚C Tj = 150˚C 1000 0 0 1.0 2.0 3.0 4.0 Instantaneous forward voltage VF - (V) Fig.1 Maximum (limit) forward characteristics 3/8 DSF21545SV 500 Measured under pulse conditions Instantaneous forward current IF - (A) 400 300 Tj = 25˚C Tj = 150˚C 200 100 0 0 0.5 1.0 1.5 2.0 Instantaneous forward voltage VF - (V) Fig.2 Maximum (limit) forward characteristics 250 Current waveform VFR Voltage waveform Transient forward votage VFP - (V) 200 δy di = δy dt δx δx 150 Tj = 125˚C limit 100 Tj = 25˚C limit 50 0 500 1000 1500 2000 2500 3000 Rate of rise of forward current dIF/dt - (A/µs) Fig.3 Transient forward voltage vs rate of rise of forward current 4/8 DSF21545SV 100000 QS = ∫ IF 50µs Conditions: 0 Tj = 150˚C, VR = 100V Reverse recovered charge QS - (µC) QS tp = 1ms dIR/dt 10000 IRR IF = 4000A IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A 1000 100 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.4 Recovered charge 10000 Conditions: Tj = 150 ˚C, Reverse recovery current IRR - (A) VR = 100V IF = 4000A IF = 2000A IF = 1000A IF = 500A 1000 IF = 200A IF = 100A 100 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.5 Typical reverse recovery current vs rate of rise of reverse current 5/8 DSF21545SV Thermal impedance - ˚C/W 0.1 d.c.Double side cooled 0.01 0.001 0.0001 0.001 0.01 0.1 1.0 10 Time - (s) Fig.5 Maximum (limit) transient thermal impedance - junction to case 6/8 100 DSF21545SV PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Cathode 27.0 25.4 Ø112.5 max Ø73 nom Ø73 nom Anode Nominal weight: 1100g Clamping force: 43kN ±10% Package outine type code: V ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 Use of V , r on-state characteristic AN5001 TO T 7/8 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. 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