ROHM EDZV22B

Data Sheet
Zener diode
EDZV series
Applications
Constant voltage control
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.12±0.05
0.8±0.05
0.6
0.8
1.6±0.1
1.2±0.05
1.7
Features
1) Compact,2-pin mini-mold type for
high-density mounting.(EMD2)
2) High reliability.
3) Can be mounted automatically,
using chip mounter.
EMD2
Structure
0.3±0.05
Construction
Silicon epitaxial planar
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
EX. EDZV3.6B
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
P
Junction temperature
Tj
Storage temperature
Tstg
Operating temperature
Topr
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© 2011 ROHM Co., Ltd. All rights reserved.
Limits
150
150
55 to 150
55 to 150
1/5
Unit
mW
°C
°C
°C
2011.10 - Rev.A
Data Sheet
EDZV series
Electical characteristics (Ta=25°C)
Symbol
TYP.
Zener voltage ：Vz(V)
Operating resistance ：Zz(Ω)
Rising operataing
resistance ：Zz(Ω)
Reverse current ：
IR(A)
MIN.
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
VR(V)
EDZV 3.6B
3.600
3.845
5.0
100
5.0
1000
1.0
10.0
1.0
EDZV 3.9B
3.890
4.160
5.0
100
5.0
1000
1.0
5.0
1.0
EDZV 4.3B
4.170
4.430
5.0
100
5.0
1000
1.0
5.0
1.0
EDZV 4.7B
4.550
4.750
5.0
100
5.0
800
0.5
2.0
1.0
EDZV 5.1B
4.980
5.200
5.0
80
5.0
500
0.5
2.0
1.5
2.5
EDZV 5.6B
5.490
5.730
5.0
60
5.0
200
0.5
1.0
EDZV 6.2B
6.060
6.330
5.0
60
5.0
100
0.5
1.0
3.0
EDZV 6.8B
6.650
6.930
5.0
40
5.0
60
0.5
0.5
3.5
EDZV 7.5B
7.280
7.600
5.0
30
5.0
60
0.5
0.5
4.0
EDZV 8.2B
8.020
8.360
5.0
30
5.0
60
0.5
0.5
5.0
6.0
7.0
EDZV 9.1B
8.850
9.230
5.0
30
5.0
60
0.5
0.5
EDZV 10B
9.770
10.210
5.0
30
5.0
60
0.5
0.1
EDZV 11B
10.760
11.220
5.0
30
5.0
60
0.5
0.1
8.0
EDZV 12B
11.740
12.240
5.0
30
5.0
80
0.5
0.1
9.0
EDZV 13B
12.910
13.490
5.0
37
5.0
80
0.5
0.1
10.0
80
0.5
0.1
11.0
80
0.5
0.1
12.0
EDZV 15B
14.340
14.980
5.0
42
5.0
EDZV 16B
15.850
16.510
5.0
50
5.0
65
85
5.0
80
0.5
0.1
13.0
5.0
100
0.5
0.1
15.0
100
0.5
0.1
17.0
19.0
21.0
EDZV 18B
17.560
18.350
5.0
EDZV 20B
19.520
20.390
5.0
EDZV 22B
21.540
22.470
5.0
100
5.0
120
5.0
120
0.5
0.1
150
2.0
150
0.5
0.1
EDZV 24B
23.720
24.780
5.0
EDZV 27B
26.190
27.530
2.0
EDZV 30B
29.190
30.690
2.0
200
2.0
200
0.5
0.1
23.0
EDZV 33B
32.150
35.070
33.790
36.870
2.0
250
2.0
300
2.0
0.5
0.5
0.1
2.0
250
300
25.0
27.0
EDZV 36B
0.1
(1) The zener voltage(Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
MARKING (Type No.)
TYPE
TYPE
TYPE NO.
TYPE NO.
EDZV 3.6B
6 2
EDZV 12B
2 5
EDZV 3.9B
7 2
EDZV 13B
3 5
EDZV 4.3B
8 2
EDZV 15B
4 5
EDZV 4.7B
9 2
EDZV 16B
5 5
EDZV 5.1B
A2
EDZV 18B
6 5
EDZV 5.6B
C2
EDZV 20B
7 5
EDZV 6.2B
E2
EDZV 22B
8 5
EDZV 6.8B
F 2
EDZV 24B
9 5
EDZV 7.5B
H2
EDZV 27B
A5
EDZV 8.2B
J 2
EDZV 30B
C5
EDZV 9.1B
L 2
EDZV 33B
E5
EDZV 10B
0 5
EDZV 36B
EDZV 11B
1 5
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© 2011 ROHM Co., Ltd. All rights reserved.
F 5
2/5
2011.10 - Rev.A
Data Sheet
EDZV series
10
ZENER CURRENT:Iz(mA)
1
0.1
4.7
7.5
5.1 5.6
4.3
0.01
6.8
8.2
3.9
9.1 10
6.2
11
3.6
12
15
13
16
18
24
22
20
33
30
27
36
0.001
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1000
Input waveform
REVERSE SURGE MAXIMUM
POWER:PRSM(W)
POWER DISSIPATION:Pd(mW)
200
150
100
50
t
1pulse
10
1
0.1
0
0
25
50
75
100
125
0.001
150
0.1
40
30
0.04
25
0.02
20
mV/°C
15
-0.02
10
-0.04
5
-0.06
0
-5
-0.08
20
30
10
100
Rth(j-a)
Rth(j-c)
100
10
40
0.001
ZENER VOLTAGE：Vz(V)
γz-Vz CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
0.06
10
1
Mounted on epoxy board
TEMP.COEFFICIENCE:γz(mV/°C)
35
0
0.1
1000
%/°C
0.08
0
0.01
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
Pd-Ta　CHARACTERISTICS
TEMP.COEFFICIENCE:γz(%/°C)
PRSM
100
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
3/5
2011.10 - Rev.A
10
10000
Ta=125°C
1
1000
REVERSE CURRENT:IR (nA)
ZENER CURRENT:Iz(mA)
Data Sheet
EDZV3.6B
Ta=25°C
Ta=75°C
Ta=-25°C
0.1
0.01
100
10
Ta=125°C
1
0.1
Ta=75°C
0.01
0.001
Ta=25°C
0.001
0
1
2
3
4
5
0
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
0.5
1
4.0
100
f=1MHz
Ta=25°C
IZ=5mA
n=30pcs
ZENER VOLTAGE:Vz(Ｖ)
3.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1.5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
3.8
AVE:3.661V
3.7
3.6
1
3.5
0
0.2
0.4
0.6
0.8
1
Vz DISRESION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
65
REVERSE CURRENT:IR(nA)
190
Ta=25°C
VR=1.0V
n=30pcs
180
170
160
150
140
130
AVE:142.3nA
120
110
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
200
100
Ta=25°C
f=1MHz
VR=0V
n=10pcs
64
63
62
61
60
59
AVE:61.36pF
58
57
56
55
IR DISRESION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISRESION MAP
4/5
2011.10 - Rev.A
Data Sheet
EDZV3.6B
30
10000
No break at 30kV
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
DYNAMIC IMPEDANCE:Zz(Ω)
25
1000
100
20
AVE：15.5kV
15
10
5
0
10
0.1
1
10
C=200pF
R=0Ω
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A