Analog Power AM9435P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 49 @ VGS = -10V -30 69 @ VGS = -4.5V Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±25) for battery pack applications ID (A) -5.7 -5.0 1 8 2 7 3 6 4 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -30 V ±25 Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current TA=25oC a o TA=70 C b a Continuous Source Current (Diode Conduction) ±6.5 ID IDM ±30 IS -1.6 o TA=25 C Power Dissipationa o TA=70 C Operating Junction and Storage Temperature Range a Maximum Junction-to-Case Maximum Junction-to-Ambienta Symbol t <= 5 sec t <= 10 sec RθJC RθJA A 3.1 PD W 2.0 TJ, Tstg Parameter A ±5.2 o C -55 to 150 Maximum 25 40 Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 November, 2003 - Rev. B PRELIMINARY Publication Order Number: DS-AM9435_D Analog Power AM9435P SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage rDS(on) -1 VDS = 0 V, VGS = ±25 V ±100 nA VDS = -24 V, VGS = 0 V -1 -5 uA o VDS = -24 V, VGS = 0 V, TJ = 55 C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -5.7 A VGS = -4.5 V, ID = -5.0 A -30 A 49 69 mΩ gfs VSD VDS = -15 V, ID = -5.7 A IS = -2.1 A, VGS = 0 V 19 -0.7 S V Qg Qgs Qgd VDS = -15 V, VGS = -4.5 V, ID = -5.7 A 6 2.0 2.7 nC td(on) tr td(off) tf VDD = -15 V, RL = 15 Ω , ID = -1 A, VGEN = -10 V, RG = 6Ω 10 2.8 53.6 46 nS Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 November, 2003 - Rev. B PRELIMINARY Publication Order Number: DS-AM9435_D Analog Power AM9435P Typical Electrical Characteristics (P-Channel) 30 15 -6.0V o VDS = -5V -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -10V 20 -4.0V 10 o TA = -55 C 25 C 12 o 125 C 9 6 3 -3.0V 0 0 0 1 2 3 4 5 1 6 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 3.5 4 4.5 with Source Current and Temperature 800 2 f = 1 MHz VGS = 0 V 700 1.8 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 Figure 2. Body Diode Forward Voltage Variation Figure 1. On-Region Characteristics 1.6 -4.5V -6.0V 1.4 1.2 -10V 1 CISS 600 500 400 300 COSS 200 100 0.8 0 6 12 18 24 CRSS 0 30 0 5 -ID, DRAIN CURRENT (A) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics 1.6 -10 I D=5.7 -8 VGS = 10V ID = 5.7A 1.4 Normalized RDS(on) Vgs Gate to Source Voltage ( V ) 2 -VGS, GATE TO SOURCE VOLTAGE (V) -6 -4 -2 1.2 1.0 0.8 0 0 3 6 9 12 15 0.6 -50 Qg Gate Charge (nC) 0 25 50 75 100 125 150 TJ Juncation Temperature (C) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3 November, 2003 - Rev. B PRELIMINARY -25 Publication Order Number: DS-AM9435_D Analog Power AM9435P 0.25 100 ID = -5.7A VGS =0V 10 RDS(ON), ON-RESISTANCE (OHM) -IS, REVERSE DRAIN CURRENT (A) Typical Electrical Characteristics (P-Channel) o TA = 125 C 1 0.1 o 25 C 0.01 0.001 0.0001 0 0.2 0.15 0.1 0.05 TA = 25oC 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. On-Resistance with Gate to Source Voltage 50 VDS = VGS ID = -250mA 2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 2.2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (oC) SINGLE PULSE RqJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Vth Gate to Source Voltage Vs Temperature Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0 .5 Rq J A(t) = r(t ) + Rq J A Rq J A = 12 5o C/ W 0 .2 0.1 0 .0 5 P(p 0 .0 2 0.01 t 0 .0 1 SINGLE PULSE 0.001 0.0001 0.001 t TJ - TA = P * Rq J A(t ) Dut y Cycle, D = t 1 / t 2 0.01 0.1 1 10 100 1000 t1, T IME (sec) Figure 11. Transient Thermal Response Curve 4 November, 2003 - Rev. B PRELIMINARY Publication Order Number: DS-AM9435_D Analog Power AM9435P Package Information SO-8: 8LEAD H x 45° 5 November, 2003 - Rev. B PRELIMINARY Publication Order Number: DS-AM9435_D Analog Power AM9435P Ordering information • AM9435P-T1-XX – – – – – – A: M: 9435: P: T1: XX: Analog Power MOSFET Part number P-Channel Tape & reel Blank: Standard PF: Leadfree 6 November, 2003 - Rev. B PRELIMINARY Publication Order Number: DS-AM9435_D