RoHS LL4150 D T ,. L High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High forward current capability Applications IC C O High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar R T Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions C E L Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current E Power dissipation Junction temperature J E O N Type tp=1μs VR=0 Storage temperature range Symbol Value Unit VRRM 50 V VR 40 V IFSM 4 A IF 600 mA IFAV 300 mA PV 500 mW Tj 175 ℃ Tstg -65~+175 ℃ Maximum Thermal Resistance W Tj=25℃ Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 500 K/W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS LL4150 Figure 3. Reverse current vs. junction temperature Dimensions in mm R T Cathode identification J E W IC O N Figure 4. Diode capacitance vs. reverse voltage (Typical values) O Φ1.5±0.1 C E L E C D T ,. L 0.3 3.5±0.2 Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS LL4150 Electrical Characteristics D T ,. L Tj=25℃ Parameter Max Unit 0.54 0.62 V VF 0.66 0.74 V IF=50mA VF 0.76 0.86 V IF=100mA VF 0.82 0.92 V IF=200mA VF 0.87 VR=50V IR VR=50V, Tj=150℃ IR Diode capacitance VR=0, f=1MHz, VHF=50mV CD Reverse recovery time IF= IR=10…100mA, iR=1mA, trr Forward voltage Test Conditions Reverse current Type Symbol Min IF=1mA VF IF=10mA IC RL=100Ω Typ C O 1.0 V 100 nA 100 μA 2.5 pF 4 ns N Characteristics (Tj=25℃ unless otherwise specified) R T J E C E L E Figure 1. Maximum permissible continuous forward current vs. ambient temperature O Figure 2. Forward current vs. forward voltage W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]