MSS50,000 Series High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode. • • • VF , R D and CJ matching options Chip, beam lead or packaged devices Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Rating Reverse Voltage Rated VBR Forward Current 50 mA Operation Temperature -65 ºC to +150 ºC Storage Temperature -65 ºC to +150 ºC Power Dissipation 100 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC Soldering Temperature (Packaged) + 260 ºC for 5 sec. Beam Lead Pull Strength 4 grams minimum Chip Electrical Specifications, TA = 25 ºC Model Configuration MSS50,048-C15 Single Junction MSS50,062-C16 Single Junction Test Conditions Revision Date: 05/20/05 VF VBR CJ RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V V pF 0.5 4 0.12 / 0.15 7 15 190 C15 2 12 160 C16 0.5 5 0.50 / 0.55 IF = 1 IR = VR = 0 V mA 10 μA F = 1 MHz Outline GHz I F = 5 mA MSS50,000 Series High Barrier Silicon Schottky Diodes Beam Lead Electrical Specifications, TA = 25 ºC Model Configuration VF VBR CJ RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V V pF Outline GHz MSS50,146-B10B Single Junction 0.52 5 0.07 / 0.12 9 18 253 B10B MSS50,244-B20 Series Tee 0.52 4 0.15 / 0.20 7 16 183 B20 MSS50,448-B40 Ring Quad 0.52 10 0.20 / 0.25 6 14 133 B40 IF = 1 mA IR = 10 μA VR = 0 V F = 1 MHz Test Conditions I F = 5 mA Packaged Electrical Specifications, TA = 25 ºC Model Configuration VF VBR CT RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V V pF Outline GHz MSS50,048-P55 Single Junction 0.50 4 0.24 / 0.30 12 10 190 P55 MSS50,048-P86 Single Junction 0.50 4 0.27 / 0.33 12 10 190 P86 MSS50,146-E25 Single Junction 0.52 5 0.20 / 0.26 15 12 253 E25 MSS50,146-H20 Single Junction 0.52 5 0.28 / 0.34 15 12 253 H20 MSS50,244-E30 Series Tee 0.52 5 0.30 / 0.36 7 16 183 E30 MSS50,244-H30 Series Tee 0.52 5 0.36 / 0.42 7 16 183 H30 MSS50,448-E45 Ring Quad 0.52 5 0.30 / 0.36 10 10 133 E45 MSS50,448-H40 Ring Quad 0.52 5 0.36 / 0.42 10 10 133 H40 IF = 1 mA IR = 10 μA VR = 0 V F = 1 MHz Test Conditions 2 Revision Date: 05/20/05 Aeroflex / Metelics, Inc. www.aeroflex-metelics.com I F = 5 mA MSS50,000 Series High Barrier Silicon Schottky Diodes Typical Performance, TA = 25 ºC Figure 1. Figure 2. Forward Voltage vs. Current Reverse se Current vs. vss. Volta Voltage M! IR IF M! Figure 3. Figure 4. NF & ZIFF vs. LO Power Smith Chart - 50 .& :)& Reference MSS-50,048-P86 0 ZIFF ( ) NF (dB) '(Z '(Z d '(Z '(Z L.O. Power (dBm) )2%#4M!D"M )2%#4M!D"M )2%#4M!D"M Outline Drawings C15 C15 C16C15 17 [.432] 13 [.330] Top contact is cathode. Top Contact 1.1 [0.028] 0.9 [0.023] 17 [.432] 13 [.330] Top contact is cathode. 17 [.432] 13 [.330] Top Contact 1.1 [0.028] 0.9 [0.023] 17 [.432] 13 [.330] 6 [0.152] 4 [0.102] Back Contact 6 [0.152] 4 [0.102] Back Contact Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 3 Revision Date: 05/20/05 MSS50,000 Series High Barrier Silicon Schottky Diodes Outline Drawings B10B B10B 10 [0.254] 6 [0.152] B40 0.55 [0.014] 0.25 [0.006] 21.5 [0.546] 17.5 [0.445] SQ Cut lead is anode 3.5 [0.089] 1.2 [0.030] 33 [0.838] 28 [0.711] 12 [0.305] 9 [0.229] 0.55 [0.014] 0.25 [0.006] 3.5 [0.089] 1.2 [0.030] 6 [0.152] 4 [0.102] 4 Pls Back Ba c k 12 [0.305] 9 [0.229] Back View E25 E25 (non-hermetic) Le ss tha n 0.5 [0.013] Lp = 0.1nH Cp = 0.015pF Ba c k Vie w E45 (non-hermetic) E45 55 [1.397] SQ. 45 [1.143] Cp=0.07pF Lp=0.4nH 12 [0.305] 8 [0.203] 4 Pls 8.75 [0.222] 4.75 [0.121] 4 Pls Less Than 0.5 [0.013] Cp=0.07pF Lp=0.4nH 55 [1.397] SQ. 45 [1.143] Cut Lead is Cathode 18 [0.457] 4 Pls 12 [0.305] 18 [0.457] 12 [0.305] Epoxy 5 [0.127] 2Pls 3 [0.076] Epoxy 50 [1.270] Max. 5 [0.127] 4 Pls 3 [0.076] 50 [1.270] Max. 14 [0.356] 8 [0.203] Ceramic 14 [0.356] 8 [0.203] 80 [2.032] Min. P86 P86 P55 (hermetic) (hermetic) 15 [0.381] 10 [0.254] 64 [1.626] 60 [1.524] 210 [5.334] 190 [4.826] Ceramic Body H20 64 [1.626] Dia. 60 [1.524] p=0.15pF =1nH 55 [1.397] 51 [1.295] Dia. 55 [1.397] 45 [1.143] 80 [2.032] Min. Ceramic H40 H40 Cp=0.18pF Lp=0.5nH 102 [2.591] Dia 81 [2.057] (hermetic) (hermetic) 23 [0.584] 17 [0.432] 0 5nH .18pF 102 [2.591] Dia 81 [2.057] 23 [0.584] 17 [0.432] Cut lead is Cathode Ceramic Body 82 [2.083] 70 [1.778] 104 [2.642] 92 [2.337] Square 130 [3.302] Min. 2 Pls 130 [3.302] Min. 4 Pls 104 [2.642] 92 [2.337] Square 8 [0.203] 4 [0.102] 6 [0.152] 3 [0.076] 8 [0.203] 4 [0.102] 6 [0.152] 3 [0.076] Heatsink is anode 84 [2.134] Dia. 78 [1.981] Heatsink is anode 35 [0.889] 25 [0.635] 35 [0.889] 25 [0.635] Aeroflex / Metelics Aeroflex Microelectronic Solutions 975 Stewart Drive, Sunnyvale, CA 94085 TEL: 408-737-8181 Fax: 408-733-7645 www.aeroflex-metelics.com [email protected] Aeroflex / Metelics, Inc. reserves the right to make changes to any products and services herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. Copyright 2003 Aeroflex / Metelics. All rights reserved. Revision Date: 05/20/05 attributes represented by these three icons: solution-minded, performance-driven and customer-focused.