1A, High Efficiency LDS Module HU1145

HU1145
1A, High Efficiency LDS Module
GENERAL DESCRIPTION:
FEATURES:
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The LDS module is non-isolated dc-dc converter that
can deliver up to 1A of output current. The PWM
switching regulator, high frequency power inductor,
input/output bulk capacitors are integrated in one
hybrid package.
High Density Integration Module
1A Output Current
93% Peak Efficiency at 3.3VIN
Input Voltage Range from 2.7V to 5.5V
Adjusted Output Voltage
Enable Function
Automatic Power Saving/PWM Mode
Protections (UVLO, OCP: Non-latching)
Internal Soft Start
Compact Size: 2.9mm*2.3mm*1.0mm
Pb-free for RoHS compliant
MSL 2, 260C Reflow
The module has automatic operation with PWM mode
and power saving mode according to loading. Other
features include remote enable function, internal
soft-start, non-latching over current protection, short
circuit protection and input under voltage locked-out
capability.
The low profile and compact size package (2.9mm ×
2.3mm x 1.0mm) is suitable for automated assembly
by standard surface mount equipment. The module is
Pb-free and RoHS compliance.
APPLICATIONS:
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Single Li-Ion Battery-Powered Equipment
LDOs Replacement
Cell Phones / PDAs / Palmtops
TYPICAL APPLICATION CIRCUIT & PACKAGE:
Enable
ON
OFF(GND)
EN
V OU T
V IN
(+)
(+)
RFB_top
VIN
2.7V ~ 5.5V
GN D
CFB
VOUT
FB
Adjusted
RFB_bot
(-)
(-)
FIG.1 TYPICAL APPLICATION CIRCUIT
FIG.2 HIGH DENSITY LOW PROFILE
LDS MODULE
TABLE 1. OUTPUT VOLTAGE SETTING
Vout
1.0V
1.2V
1.5V
RFB_top(Ω)
RFB_bot(Ω)
1.8V
2.5V
3.3V
50k
31.6k
22.1k
100k
150k
100k
66.5k
1
HU1145
1A, High Efficiency LDS Module
ELECTRICAL SPECIFICATIONS:
CAUTION: Do not operate at or near absolute maximum rating listed for extended periods of time. This stress may
adversely impact product reliability and result in failures not covered by warranty.
Parameter

Typ.
Max.
Unit
VIN to GND
Note 1
-
-
+6.0
V
VOUT to GND
Note 1
-
-
+6.0
V
EN to GND
Note 1
-
-
VIN+0.6
V
-
-
+110
°C
Tc
Case Temperature of Inductor
Tj
Junction Temperature
-40
-
+150
°C
Tstg
Storage Temperature
-40
-
+125
°C
Human Body Model (HBM)
-
-
2k
V
Machine Model (MM)
-
-
200
V
Charge Device Model (CDM)
-
-
1k
V
Input Supply Voltage
+2.7
-
+5.5
V
Output Voltage
+0.8
-
+4.0
V
Ambient Temperature
-40
-
+85
°C
-
70
-
°C/W
Recommendation Operating Ratings
VIN
VOUT
Ta

Min.
Absolute Maximum Ratings
ESD Rating

Description
Thermal Information
Rth(jchoke-a)
Thermal resistance from junction to ambient.
(Note 2)
NOTES:
1. Parameters guaranteed and tested by power IC vendor.
2. Rth(jchoke-a) is measured with the component mounted on an effective thermal conductivity test board on 0 LFM condition.
The test board size is 30mm×30mm×1.6mm with 2 layers, 1oz. The test condition is complied with JEDEC EIJ/JESD 51
Standards.
2
HU1145
1A, High Efficiency LDS Module
ELECTRICAL SPECIFICATIONS: (Cont.)
Conditions: TA = 25 ºC, Vin = 12V, Vout = 3.3V, unless otherwise specified.
Symbol

Conditions
Min.
Typ.
Max.
Unit
Vin = 12V, Iout = 0A
EN = VIN
Vout = 3.3V
-
0.25
-
mA
Vin =12V, EN = VIN
-
-
-
-
-
0.6
-
mA
-
33
-
mA
-
320
-
mA
0
-
1000
mA
+3.0
% VO(SET)
Input Characteristics
IQ(IN)
IS(IN)

Parameter
Input supply bias
current
Input supply
current
Iout = 1mA
Vout = 3.3V
Iout = 100mA
Vout = 3.3V
Iout = 1000mA
Vout = 3.3V
Output Characteristics
IOUT(DC)
Output
continuous
current range
VO(SET)
Ouput voltage
set point
ΔVOUT
/ΔVIN
Line regulation
accuracy
ΔVOUT
/ΔIOUT
Load regulation
accuracy
VOUT(AC)
Output ripple
voltage
Vin=12V, Vout=3.3V
With 0.5% tolerance for external
resistor used to set output
voltage
Vin = 5V to 12V
Vout = 3.3V, Iout = 0A
Vout = 3.3V, Iout = 1000mA
Iout = 0A to 1000mA
Vin = 12V, Vout = 3.3V
Vin = 12V, Vout = 3.3V
EN = VIN
-3.0
-
0.1
0.2
% VO(SET)
-
0.5
1.0
% VO(SET)
-
-
-
Iout = 1mA
14
mVp-p
Iout = 1000mA
8
mVp-p
3
HU1145
1A, High Efficiency LDS Module
ELECTRICAL SPECIFICATIONS: (Cont.)
Conditions: TA = 25 ºC, Vin = 3.3V, Vout = 1.8V, unless otherwise specified.
Symbol

Conditions
Min.
Typ.
Max.
Unit
0.558
0.6
0.612
V
-
3.0
-
MHz
Control Characteristics
VREF
Referance voltage
Note 1
FOSC
Oscillator
frequency
Note 1, PWM Operation
Enable rising
threshold voltage
Note 1
1.5
-
-
V
Enable falling
threshold voltage
Note 1
-
-
0.4
V
Falling, Note 1
-
2.5
-
V
Note 1
-
160
-
℃
1.3
-
-
A
VEN_TH

Parameter
Fault Protection
VUVLO_TH
TOTP
ILIMIT_TH
Input under voltage
lockout threshold
Over temp
protection
Current limit
threshold
Peak value of inductor current, Note 1
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HU1145
1A, High Efficiency LDS Module
PIN CONFIGURATION:
EN (1)
(6) VOUT
(5) FB
GND (2)
VIN (3)
(4) GND
TOP VIEW
PIN DESCRIPTION:
Symbol
Pin No.
Description
On/Off control pin for module.
EN = LOW, the module is off.
EN = HIGH, the module is on.
Do not float.
Power ground pin for signal, input, and output return path. This pin needs to
connect one or more ground plane directly.
EN
1
GND
2, 4
VIN
3
Power input pin. It needs to connect input rail.
FB
5
Feedback input. Connect to output through a voltage dividing resistors for
adjusting output voltage. Place those resistors as closely as possible to this pin.
VOUT
6
Power output pin. Connect to output for the load.
5
HU1145
1A, High Efficiency LDS Module
TYPICAL PERFORMANCE CHARACTERISTICS: (1.0VOUT)
Conditions: TA = 25 ºC, unless otherwise specified. Test Board Information: 30mm×30mm×1.6mm, 2 layers.
The output ripple and transient response are measured by short loop probing and limited to 20MHz bandwidth.
The following figures are the typical characteristic curves at 1.0Vout.
FIG.3 EFFICIENCY V.S. LOAD CURRENT
FIG.4 DE-RATING CURVE AT 3.3VIN
VOUT
VOUT
VOUT
FIG.5 OUTPUT RIPPLE
(3.3VIN, IOUT=5mA)
FIG.6 OUTPUT RIPPLE
(3.3VIN, IOUT=1000mA)
VOUT
EN
FIG.7 TRANSIENT RESPONSE
(3.3VIN, 0% to 50% LOAD STEP)
FIG.8 TURN-ON
(3.3VIN, IOUT=1000mA)
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HU1145
1A, High Efficiency LDS Module
TYPICAL PERFORMANCE CHARACTERISTICS: (1.2VOUT)
Conditions: TA = 25 ºC, unless otherwise specified. Test Board Information: 30mm×30mm×1.6mm, 2 layers.
The output ripple and transient response are measured by short loop probing and limited to 20MHz bandwidth.
The following figures are the typical characteristic curves at 1.2Vout.
FIG.9 EFFICIENCY V.S. LOAD CURRENT
FIG.10 DE-RATING CURVE AT 3.3VIN
VOUT
VOUT
VOUT
FIG.11 OUTPUT RIPPLE
(3.3VIN, IOUT=5mA)
FIG.12 OUTPUT RIPPLE
(3.3VIN, IOUT=1000mA)
VOUT
VOUT
VOUT
EN
FIG.13 TRANSIENT RESPONSE
(3.3VIN, 0% to 50% LOAD STEP)
FIG.14 TURN-ON
(3.3VIN, IOUT=1000mA)
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HU1145
1A, High Efficiency LDS Module
TYPICAL PERFORMANCE CHARACTERISTICS: (1.5VOUT)
Conditions: TA = 25 ºC, unless otherwise specified. Test Board Information: 30mm×30mm×1.6mm, 2 layers.
The output ripple and transient response are measured by short loop probing and limited to 20MHz bandwidth.
The following figures are the typical characteristic curves at 1.5Vout.
FIG.15 EFFICIENCY V.S. LOAD CURRENT
FIG.16 DE-RATING CURVE AT 3.3VIN
VOUT
VOUT
FIG.17 OUTPUT RIPPLE
(3.3VIN, IOUT=5mA)
FIG.18 OUTPUT RIPPLE
(3.3VIN, IOUT=1000mA)
VOUT
VOUT
EN
FIG.19 TRANSIENT RESPONSE
(3.3VIN, 0% to 50% LOAD STEP)
FIG.20 TURN-ON
(3.3VIN, IOUT=1000mA)
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HU1145
1A, High Efficiency LDS Module
TYPICAL PERFORMANCE CHARACTERISTICS: (1.8VOUT)
Conditions: TA = 25 ºC, unless otherwise specified. Test Board Information: 30mm×30mm×1.6mm, 2 layers.
The output ripple and transient response are measured by short loop probing and limited to 20MHz bandwidth.
The following figures are the typical characteristic curves at 1.8Vout.
FIG.21 EFFICIENCY V.S. LOAD CURRENT
FIG.22 DE-RATING CURVE AT 3.3VIN
VOUT
VOUT
FIG.23 OUTPUT RIPPLE
(3.3VIN, IOUT=5mA)
FIG.24 OUTPUT RIPPLE
(3.3VIN, IOUT=1000mA)
VOUT
VOUT
EN
FIG.25 TRANSIENT RESPONSE
(3.3VIN, 0% to 50% LOAD STEP)
FIG.26 TURN-ON
(3.3VIN, IOUT=1000mA)
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HU1145
1A, High Efficiency LDS Module
TYPICAL PERFORMANCE CHARACTERISTICS: (2.5VOUT)
Conditions: TA = 25 ºC, unless otherwise specified. Test Board Information: 30mm×30mm×1.6mm, 2 layers.
The output ripple and transient response are measured by short loop probing and limited to 20MHz bandwidth.
The following figures are the typical characteristic curves at 2.5Vout.
FIG.27 EFFICIENCY V.S. LOAD CURRENT
FIG.28 DE-RATING CURVE AT 3.3VIN
VOUT
VOUT
FIG.29 OUTPUT RIPPLE
(3.3VIN, IOUT=5mA)
FIG.30 OUTPUT RIPPLE
(3.3VIN, IOUT=1000mA)
VOUT
VOUT
EN
FIG.31 TRANSIENT RESPONSE
(3.3VIN, 0% to 50% LOAD STEP)
FIG.32 TURN-ON
(3.3VIN, IOUT=1000mA)
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HU1145
1A, High Efficiency LDS Module
APPLICATIONS INFORMATION:
REFERENCE CIRCUIT FOR GENERAL APPLICATION:
The Figure 33 shows the module application schematics for input voltage +5V or +3.3V and turn on by input voltage
directly through enable resistor (REN).
Enable
REN
ON
100k/0201
OFF(GND)
EN
V OU T
V IN
(+)
VIN
3.3V / 5.0V
RFB_top
100k/0201
GN D
(+)
CFB
100pF/0201
FB
Co
Option/0402
VOUT
1.8Vo
RFB_bot
50k/0201
(-)
(-)
FIG.33 TYPICAL APPLICATION FOR PWM OPERATION
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HU1145
1A, High Efficiency LDS Module
APPLICATIONS INFORMATION: (Cont.)
SAFETY CONSIDERATIONS:
Certain applications and/or safety agencies may require fuses at the inputs of power conversion components. Fuses
should also be used when there is the possibility of sustained input voltage reversal which is not current limited. For
greatest safety, we recommend a fast blow fuse installed in the ungrounded input supply line. The installer must
observe all relevant safety standards and regulations.
For safety agency approvals, install the converter in compliance with the end-user safety standard.
INPUT FILTERING:
The module should be connected to a source supply of low AC impedance and high inductance in which line
inductance can affect the module stability. An input capacitor must be placed as near as possible to the input pin of
the module so to minimize input ripple voltage and ensure module stability.
OUTPUT FILTERING:
To reduce output ripple and improve the dynamic response as the step load changes, an additional capacitor at the
output must be connected. Low ESR polymer and ceramic capacitors are recommended to improve the output ripple
and dynamic response of the module.
PROGRAMMING OUTPUT VOLTAGE:
The module has an internal 0.6V±2% reference voltage. The output voltage can be programmed by the dividing
resistor (RFB) which connects to both FB pin and GND pin. The output voltage can be calculated by Equation 1,
resistor choice may be referred to TABLE 1.
 100k 
VOUT (V)  0.6  1 

 RFB 
VOU(V)
RFB(k)
1.0
150(1%)
1.2
100(1%)
1.8
50(1%)
2.5
31.6(1%)
3.3
22.1(1%)
TABLE 1 Resistor values for common output voltages
12
(EQ.1)
HU1145
1A, High Efficiency LDS Module
APPLICATIONS INFORMATION: (Cont.)
RECOMMENDATION LAYOUT GUIDE:
In order to achieve stable, low losses, less noise or spike, and good thermal performance some layout
considerations are necessary. The recommendation layout is shown as Figure 34.
1.
The ground connection between pin 2 and 4 should be a solid ground plane under the module. It can be
connected one or more ground plane by using several Vias.
2.
Place high frequency ceramic capacitors between pin 3 (VOUT), and pin 2, 4 (GND) for output side, as close to
module as possible to minimize high frequency noise.
3.
Keep the RFB_top ,RFB_bot , and CFF connection trace to the module pin 5 (FB) short.
4.
Use large copper area for power path (VIN, VOUT, and GND) to minimize the conduction loss and enhance heat
transferring. Also, use multiple Vias to connect power planes in different layer.
FIG.34 RECOMMENDATION LAYOUT (TOP LAYER)
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HU1145
1A, High Efficiency LDS Module
APPLICATIONS INFORMATION: (Cont.)
Thermal Considerations:
All of thermal testing condition is complied with JEDEC EIJ/JESD 51 Standards. Therefore, the test board size is
30mm×30mm×1.6mm with 2 layers. The case temperature of module sensing point is shown as Figure 35. Then
Rth(jchoke-a) is measured with the component mounted on an effective thermal conductivity test board on 0 LFM
condition. The HU1145 module is designed for using when the case temperature is below 110°C regardless the
change of output current, input/output voltage or ambient temperature.
FIG. 35 Case Temperature Sensing Point
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HU1145
1A, High Efficiency LDS Module
REFLOW PARAMETERS:
Lead-free soldering process is a standard of making electronic products. Many solder alloys like Sn/Ag, Sn/Ag/Cu,
Sn/Ag/Bi and so on are used extensively to replace traditional Sn/Pb alloy. Here the Sn/Ag/Cu alloy (SAC) are
recommended for process. In the SAC alloy series, SAC305 is a very popular solder alloy which contains 3% Ag and
0.5% Cu. It is easy to get it. Figure 36 shows an example of reflow profile diagram. Typically, the profile has three
stages. During the initial stage from 70°C to 90°C, the ramp rate of temperature should be not more than 1.5°C/sec.
The soak zone then occurs from 100°C to 180°C and should last for 90 to 120 seconds. Finally the temperature rises
to 230°C to 245°C and cover 220°C in 30 seconds to melt the solder. It is noted that the time of peak temperature
should depend on the mass of the PCB board. The reflow profile is usually supported by the solder vendor and user
could switch to optimize the profile according to various solder type and various manufactures’ formula.
FIG.36 Recommendation Reflow Profile
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HU1145
1A, High Efficiency LDS Module
PACKAGE OUTLINE DRAWING:
Unit: mm
16
HU1145
1A, High Efficiency LDS Module
LAND PATTERN REFERENCE:
Unit: mm
RECOMMENDED STENCIL PATTERN
BASED ON 130um THICKNESS STENCIL
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HU1145
1A, High Efficiency LDS Module
PACKING REFERENCE:
Package In Tape Loading Orientation
PIN1
Tape Dimension
A0
2.62  0.10
E1
1.75  0.10
B0
3.22  0.10
K0
1.35  0.10
F
3.50  0.05
P0
4.00  0.10
W
8.0  0.30
P1
2.00  0.05
D0
φ1.5 +0.10/-0.00
P2
4.00  0.10
D1
φ1.00 0.10
t
0.25  0.1
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HU1145
1A, High Efficiency LDS Module
PACKING REFERENCE: (Cont.)
Unit: mm
Reel Dimension
See Detail A
Detail A
Peel Strength of Top Cover Tape
The peel speed shall be about 300mm/min.
The peel force of top cover tape shall between 0.1N to 1.0N
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HU1145
1A, High Efficiency LDS Module
REVERSION HISTORY:
Date
Revision
Changes
2015.01.08
00
Initial released.
2015.03.31
01
Official released.
2015.06.24
02
Add REFLOW PARAMETERS
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