uPA828TD

NPN SILICON RF TWIN TRANSISTOR
PA828TD
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NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
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• Built-in low phase distortion transistor suited for OSC applications
fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Built-in 2 transistors (2  NE687)
• 6-pin lead-less minimold (M16, 1208 PKG)
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BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
ORDERING INFORMATION
Part Number
PA828TD
PA828TD-T3
Order Number
Package
PA828TD-A
6-pin lead-less minimold
PA828TD-T3-A
(M16, 1208 PKG) (Pb-Free)
Quantity
Supplying Form
50 pcs (Non reel)
• 8 mm wide embossed taping
10 kpcs/reel
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base)
face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
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The unit sample quantity is 50 pcs.
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<R>
NE687
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10402EJ03V0DS (3rd edition)
Date Published February 2008 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PA828TD
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5.0
V
Collector to Emitter Voltage
VCEO
3.0
V
Emitter to Base Voltage
VEBO
2
V
IC
30
mA
90 in 1 element
mW
Collector Current
Total Power Dissipation
Ptot
Note
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ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Junction Temperature
Tj
150
Storage Temperature
Tstg
65 to +150
Note Mounted on 1.08 cm 2  1.0 mm (t) glass epoxy PCB
Parameter
DC Characterstics
C
C
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ELECTRICAL CHARACTERISTICS (T A = +25C)
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180 in 2 elements
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA


100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA


100
nA
VCE = 2 V, IC = 20 mA
70

140

VCE = 1 V, IC = 10 mA, f = 2 GHz
7.0
9.0

GHz
DC Current Gain
RF Characterstics
hFE
Note 1
Gain Bandwidth Product (1)
fT
Gain Bandwidth Product (2)
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
9.0
11.0

GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
6.0
7.5

dB
VCE = 2 V, IC = 20 mA, f = 2 GHz
7.0
8.5

dB
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt

1.3
2.0
dB
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt

1.3
2.0
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz

0.4
0.8
pF
0.85



Insertion Power Gain (1)
S21e
2
Insertion Power Gain (2)
S21e
2
Noise Figure (1)
Noise Figure (2)
Cre
Note 2
SC
Reverse Transfer Capacitance
hFE Ratio
hFE1/hFE2
VCE = 2 V, IC = 20 mA,
hFE1 : Smaller value of Q1 and Q2,
hFE2 : Larger value of Q1 and Q2
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded.
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hFE CLASSIFICATION
2
Rank
FB
Marking
kL
hFE Value
70 to 140
Data Sheet PU10402EJ03V0DS
PA828TD
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TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
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Remark The graphs indicate nominal characteristics.
Data Sheet PU10402EJ03V0DS
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PA828TD
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10402EJ03V0DS
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PA828TD
Remark The graphs indicate nominal characteristics.
Data Sheet PU10402EJ03V0DS
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PA828TD
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10402EJ03V0DS
PA828TD
PACKAGE DIMENSIONS
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6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
Data Sheet PU10402EJ03V0DS
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