PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS (Units in mm) HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 1 0.65 2.0 ± 0.2 1.3 2 T97 • 3 6 0.2 (All Leads) 5 4 DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 0 ~ 0.1 PIN CONNECTIONS 1. Emitter 4. Emitter 2. Emitter 5. Emitter 3. Base 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE699M01 M01 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE1 DC Current Gain at VCE = 2 V, IC = 20 mA fT Gain Bandwidth Product at VCE = 2 V, IC = 20mA, f = 2.0GHz CRE2 |S21E| NF 2 70 GHz Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz pF Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2.0 GHz dB Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB 13 140 16 0.2 12 0.3 14 1.1 1.8 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE699M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation mW 90 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING 3000 Tape & Reel NE699M01-T1 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 VCE = 2 V Free Air Collector Current, Ic (mA) Total Power Dissipation, PT (mW) 100 80 90 mW 60 40 20 0 50 100 40 30 20 10 150 0 0.5 Ambient Temperature, TA (°C) (V) DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 25 20 200 µA 200 µA 180 µA 180 µA 160 µA 160 µA 140 140 µA µA 120 µA 100 100 µA µA 80 µA 80 µA 60 µA 60 40 µA µA fs =µA 20 µA 40 15 10 5 200 DC Current Gain, hFE Collector Current, IC (mA) 1.0 Base to Emitter Voltage, VBE (V) VCE = 2 V 100 50 VCE = 1 V 20 IB = 20 µA 10 0 1.0 2.0 3.0 Collector to Emitter Voltage, VCE (V) 1 2 5 10 20 Collector Current, IC (mA) 50 100 NE699M01 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. Ic CHARACTERISTICS INSERTION POWER GAIN vs. IC CHARACTERISTICS 18 VCE = 2 V f = 2 GHz Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) 20 10 0 VCE = 2 V f = 2 GHz 16 14 12 10 8 6 4 2 0 1 10 100 1 NOISE FIGURE vs. Ic CHARACTERISTICS 0.5 f = 1 MHz Feedback Capacitance, CRE (pF) VCE = 2 V f = 2 GHz Noise Figure, NF (dB) 100 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 4 3 2 1 0 0.4 0.3 0.2 0.1 0 1 10 100 Collector Current, Ic (mA) 40 VCE = 2 V 30 Ic = 20 mA 20 10 Ic = 3 mA 0 0.1 0.5 1.0 Frequency, f (GHz) 1 10 Collector to Base Voltage, VCB (V) INSERTION POWER GAIN vs. FREQUENCY CHARACTERISTICS Insertion Power Gain, IS21E|2 (dB) 10 Collector Current, Ic (mA) Collector Current, Ic (mA) 2.0 2.6 100 NE699M01 TYPICAL NOISE PARAMETERS (TA = 25˚C) ΓOPT FREQ. NFOPT GA (MHz) (dB) (dB) MAG ANG Rn/50 VCE = 2 V, IC = 7 mA 0.50 1.25 23.0 0.40 27 0.25 1.00 1.35 19.7 0.32 50 0.34 1.50 1.46 17.0 0.27 70 0.22 2.00 1.55 14.3 0.22 93 0.21 2.50 1.70 12.0 0.18 130 0.17 3.00 1.86 9.8 0.17 160 0.12 4.00 2.30 9.2 0.30 -150 0.08 5.00 2.75 8.2 0.60 -111 0.28 TYPICAL CONSTANT NOISE FIGURE MINIMUM NOISE FIGURE vs. FREQUENCY 1 3 3 0.2 5 500 MHz 0 0.2 0.5 1.0 2.0 ∞ 5.0 -5 -0.2 ΓOPT -3 5 GHz -2 -0.5 2 V, 7 mA Minimum Noise Figure, NFMIN (dB) 2 0.5 FMIN dB 2.5 2 1.5 2 V, 7 mA 1 0.5 -1 0 0.5 1 1.5 2 2.5 3 3.5 Frequency, f (GHz) 4 4.5 5 NE699M01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ j100 j25 135˚ S22 5 GHz S12 0.1 GHz S11 5 GHz j10 0 S11 0.1 GHz 180˚ 0 S21 0.1 GHz S21 5 GHz S22 0.1 GHz 45˚ S12 0˚ 5 GHz -j10 Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 5 mA -j100 -j25 315˚ 225˚ 270˚ -j50 NE699M01 VCE = 2 V, IC = 1 mA FREQUENCY S11 (GHz) 0.100 0.250 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 MAG 0.965 0.957 0.939 0.903 0.856 0.806 0.754 0.708 0.672 0.642 0.623 0.619 0.637 0.661 0.685 0.705 0.721 S21 ANG -5.8 -16.5 -26.7 -40.4 -54.6 -68.8 -83.5 -98.0 -111.7 -125.3 -137.6 -162.8 178.8 164.5 152.0 139.7 126.6 MAG 3.118 2.957 2.971 2.934 2.871 2.754 2.648 2.503 2.334 2.196 2.045 1.687 1.410 1.179 1.000 0.851 0.735 S12 ANG 169.3 164.0 155.1 143.5 132.0 120.8 109.7 99.4 89.6 80.6 71.9 53.0 37.3 23.6 11.8 1.7 -7.0 MAG 0.013 0.031 0.049 0.070 0.088 0.102 0.112 0.118 0.119 0.118 0.114 0.095 0.073 0.056 0.058 0.079 0.109 S22 ANG 82.4 76.7 69.3 59.7 50.0 40.9 32.3 24.3 17.0 10.6 5.1 -4.3 -5.0 9.0 34.6 49.5 52.3 MAG 0.990 0.985 0.972 0.947 0.917 0.881 0.844 0.809 0.778 0.752 0.732 0.706 0.708 0.728 0.753 0.780 0.804 K ANG -4.4 -10.5 -16.8 -24.9 -32.8 -40.3 -47.4 -54.0 -60.4 -66.6 -72.7 -87.7 -102.9 -117.2 -130.2 -141.1 -150.0 MAG1 0.17 0.10 0.13 0.17 0.22 0.27 0.33 0.38 0.45 0.51 0.59 0.83 1.17 1.58 1.55 1.16 0.89 (dB) 23.8 19.8 17.8 16.2 15.1 14.3 13.7 13.3 12.9 12.7 12.6 12.5 10.4 8.8 8.0 7.9 8.3 K MAG1 VCE = 2 V, IC = 5 mA FREQUENCY S11 (GHz) 0.100 2.500 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 0.450 5.000 MAG 0.844 0.467 0.735 0.634 0.546 0.482 0.442 0.422 0.416 0.419 0.429 0.467 0.503 0.534 0.560 0.716 0.602 S21 ANG -11.8 162.3 -49.7 -72.3 -93.2 -112.5 -130.3 -146.3 -159.8 -171.6 179.0 162.3 151.4 142.8 134.8 -55.4 115.7 MAG 13.310 3.441 11.439 10.168 8.857 7.697 6.735 5.939 5.277 4.746 4.288 3.441 2.860 2.433 2.108 11.128 1.636 S12 ANG 166.4 50.7 140.3 124.9 112.0 101.2 91.9 83.9 76.8 70.2 64.2 50.7 38.7 27.7 17.3 136.4 -2.0 MAG 0.012 0.075 0.041 0.053 0.061 0.065 0.068 0.069 0.070 0.071 0.072 0.075 0.081 0.092 0.106 0.045 0.143 S22 ANG 79.5 33.4 60.0 49.9 42.4 37.2 33.7 31.6 30.4 30.2 30.6 33.4 37.6 41.2 43.1 57.4 41.5 MAG 0.955 0.423 0.847 0.751 0.665 0.596 0.541 0.501 0.471 0.450 0.436 0.423 0.435 0.465 0.503 0.826 0.588 ANG -8.7 -100.4 -31.2 -42.8 -52.0 -59.3 -65.6 -71.3 -76.6 -81.9 -87.1 -100.4 -113.5 -125.3 -135.6 -34.4 -150.7 0.21 0.19 0.25 0.35 0.45 0.56 0.66 0.77 0.87 0.96 1.04 1.19 1.24 1.21 1.12 1.02 0.91 (dB) 30.4 26.4 24.5 22.8 21.7 20.7 20.0 19.3 18.8 18.3 16.5 14.0 12.5 11.5 10.9 10.9 10.6 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE699M01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE699M01 VCE = 2 V, IC = 7 mA FREQUENCY S11 (GHz) 0.100 0.250 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 MAG 0.792 0.743 0.658 0.552 0.471 0.421 0.397 0.389 0.393 0.403 0.418 0.460 0.495 0.525 0.549 0.569 0.589 S21 ANG -14.7 -37.2 -58.5 -83.5 -105.7 -125.7 -143.6 -158.8 -171.3 178.2 170.0 155.6 146.2 138.5 131.2 122.8 113.1 MAG 17.256 15.479 14.101 12.010 10.130 8.616 7.432 6.493 5.738 5.137 4.634 3.710 3.086 2.630 2.287 2.015 1.790 S12 ANG 164.9 149.9 135.4 119.6 107.1 97.0 88.4 81.0 74.5 68.4 62.8 50.2 38.9 28.4 18.3 8.7 -0.7 MAG 0.012 0.027 0.038 0.048 0.054 0.058 0.061 0.063 0.065 0.067 0.070 0.077 0.087 0.099 0.114 0.131 0.150 S22 ANG 78.8 67.6 57.9 48.8 43.0 39.5 37.5 36.7 36.5 37.0 37.6 40.2 42.5 43.9 44.0 42.8 40.5 MAG 0.939 0.882 0.794 0.683 0.593 0.525 0.476 0.440 0.415 0.397 0.386 0.378 0.393 0.423 0.462 0.505 0.549 K ANG -10.3 -24.0 -35.7 -47.5 -56.4 -63.4 -69.4 -74.9 -80.1 -85.5 -90.7 -104.1 -117.0 -128.4 -138.0 -145.7 -152.0 0.23 0.23 0.31 0.43 0.55 0.67 0.77 0.87 0.96 1.04 1.10 1.19 1.21 1.17 1.09 1.01 0.92 MAG1 (dB) 31.6 27.6 25.7 24.0 22.8 21.7 20.9 20.1 19.5 17.6 16.3 14.2 12.8 11.8 11.2 11.4 10.8 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE