To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR3JM Dimensions in mm 3.2±0.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX ∗ TYPE NAME VOLTAGE CLASS φ3.6±0.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 ∗ 123 24 3 • IT (AV) ........................................................................ 0.8A • VDRM ....................................................................... 400V • IGT ..........................................................................50mA 1 1 2 3 4 Measurement point of case temperature CATHODE ANODE GATE ANODE TO-220 APPLICATION Automatic strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter Unit 8 VRRM Repetitive peak reverse voltage 400 V VRSM Non-repetitive peak reverse voltage 480 V VDRM Repetitive peak off-state voltage 400 V VDSM Non-repetitive peak off-state voltage 480 V Symbol Conditions Parameter IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=37°C ITRM Repetitive peak on-state current ✽1 CM=1800µF with discharge current PGM Ratings 0.8 Unit A 240 A Peak gate power dissipation 3.0 W PG (AV) Average gate power dissipation 0.3 W VFGM Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 1 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 2.0 g ✽1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=25°C, VRRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=25°C, VDRM applied — — 0.1 mA VTM On-state voltage Tc=25°C, ITM =3A, Instantaneous value — — 1.8 V VGT Gate trigger voltage Tj=25°C, VD =6V, RL=6Ω — — 2.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.1 — — V IGT Gate trigger current Tj=25°C, VD =6V, RL=6Ω — — 50 mA Cc Commutating capacitor ✽2 CM=1800µF, VCM=350V, ITM =240A, L=50µH, V GK=–6V, Ta=25°C — — 2.8 µF ✽2. Refer to sections 3 on STROBE FLASHER APPLICATION. MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 6 7 8 ON-STATE VOLTAGE (V) 9 10 GATE CHARACTERISTICS GATE VOLTAGE (V) ON-STATE CURRENT (A) PERFORMANCE CURVES 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 VFGM = 6V PGM = 3W VGT = 2.0V IGT = 50mA (Tj = 25°C) PG(AV) = 0.3W IFGM = 1A VGD = 0.1V 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 1.0 TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (V) 102 7 5 4 3 2 101 –20 –10 0 10 20 30 40 50 60 70 80 TYPICAL EXAMPLE 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) COMMUTATING CHARACTERISTICS 3000 102 7 5 3 2 2000 CC=4.0µF 103 7 5 3 2 2500 1500 1000 500 100 140 180 220 CC=3.5µF t CC=3.0µF 0 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 260 PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR VS. PEAK ON-STATE CURRENT COMMUTATING CAPACITOR VS. CASE TEMPERATURE VCM = 350V 4.5 CM = 1000µF 4.0 L = 50µH Ta = 25°C 3.5 SEE FIG.1 3.0 2.5 2.0 1.5 1.0 0.5 0 100 140 180 220 260 PEAK ON-STATE CURRENT (A) 300 COMMUTATING CAPACITOR (Tc = t°C) COMMUTATING CAPACITOR (Tc = 25°C) 100 (%) GATE CURRENT PULSE WIDTH (µs) 5.0 COMMUTATING CAPACITOR (µF) VCM = 350V Ta = 25°C L = 50µH SEE FIG.1 tw CC=2.5µF IG CC=2.0µF 104 7 TYPICAL EXAMPLE 5 3 2 MAIN CAPACITOR (µF) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH CC=1.5µF GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 180 170 160 150 TYPICAL EXAMPLE 300 VCM = 350V ITM = 240A CM = 1800µF L = 50µH 140 130 120 110 100 90 80 0 10 20 30 40 50 60 70 80 90 100 CASE TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR L A ∗3 VCM + CM − 15kΩ CC B 0.1µ T.U.T IT 10kΩ 1kΩ 0.1µ 22Ω 10Ω ✽3 The circuit between A-B is a substitute for Xenon flash tube. STROBE FLASHER APPLICATION Be sure to remember the following points when designing series type automatic strobe flashers using the CR3JM or CR3AMZ. 1. Rated repetitive peak on-state current ITRM The figure shows a turn-off characteristic test circuit. When a repetitive discharge current passes to the thyristor (TUT) through the load from the charged main capacitor (CM), the limiting value for the on-state peak current the thyristor can withstand is the rated repetitive peak on-state current. To ensure the current fed into the thyristor will not exceed this rated value, it is essential to select the appropriate main capacitor charging voltage V CM, the load (Xenon lamp) resistance and the anode reactor L described below. 2. Main capacitor CM In addition to its effect on the peak on-state current value, the capacitance of the main capacitor is an important factor determining the temperature rise of the thyristor junction. When the capacitance of the main capacitor becomes large, the discharge-time constant becomes great also, the temperature rise at the thyristor junction will be very serious and the commutating capability of the thyristor will decrease. When the device is turned off, damage may also be caused by the reverse voltage applied to the thyristor resulting in thermal run away. 3. Commutating Capacitor CC The capacitance values of the commutating Capacitor (CC) required for turning the thyristor off can be obtained from the following equation since the electric charge stored in this capacitor and the electric charge released during commutation are the same. i2T CC ≥ iT ·tq + + ∆CC (µF) VCC 2VCC · (–diT /dt)C Where iT : On-state current (A) immediately before turning off tq : Pulse turn-off time of the thyristor (µs) VCC : C C charging voltage (V) (–diT/dt)C : Rate of on-state current drop during commutation (A/µs) ∆CC : Loss component due to the impedance of the commutating circuit. In real conditions, however, the turn-off time will vary considerably depending on the temperature of the junction, and the gate reverse bias conditions during turn-off. It is necessary, therefore, to check the actual CC value and to adapt the settings (circuit conditions). The commutating characteristics graph shown in the figure relates to general circuit conditions. 4. Anode reactor L When the thyristor is turned on, the anode reactor L is used to control the rise of the discharge current from the main capacitor and the commutating circuit current in the commutating mode, respectively. The anode reactor L is suitable for use within the range of 20~100µH (air core). With this anode reactor inserted, the voltage during commutation may rise and the thyristor may lead to withstand voltage deterioration so that it is necessary to connect the 1~3A class rectifier diode in anti-parallel for protection, i.e., in the opposite direction to the flow of the discharge current. Feb.1999