BT331_App

BeRex
BT331
Application Note
RF MMIC Innovator
www.berex.com
[Classification] Application Note
[Date] 2011.04
[Revision No.] Rev.A
[Measuring Instruments]
- NA_Agilent 8753ES
- SA_Agilent E4404B
- SG_Agilent 4438C
- SG_IFR 3416
High Power Amplifier BT331
Application Note
BeRex
High Power Amplifier
1
F-RD-1104
BeRex
BT331
Application Note
Contents
RF MMIC INNOVATOR
WWW.BEREX.COM ............................................................. 1
1. 836MHZ APPLICATION ..................................................................................................................... 3
1.1 836MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ............................................................. 4
2. 836MHZ ( RESISTER INSERTION ) APPLICATION ......................................................................... 5
2.1 836MHZ ( RESISTER INSERTION ) TEST RESULT(S-PARAMETER, OIP3, P1, NF)................. 6
3. CDMA(824~894MHZ) APPLICATION ................................................................................................ 7
3.1 CDMA(824~894MHZ) TEST RESULT(S-PARAMETER, OIP3, P1, NF) ........................................ 8
3.2 CDMA(824~894MHZ) TEST RESULT(ACPR) ............................................................................... 9
4. 900MHZ ( RESISTER INSERTION ) APPLICATION ....................................................................... 10
4.1 900MHZ ( RESISTER INSERTION ) TEST RESULT(S-PARAMETER, OIP3, P1, NF)............... 11
5. WCDMA(920~960MHZ) APPLICATION ........................................................................................... 12
5.1 WCDMA(920~960MHZ) TEST RESULT(S-PARAMETER, OIP3, P1, NF) ................................... 13
5.2 WCDMA(920~960MHZ) TEST RESULT(ACLR) .......................................................................... 14
6. PCS(1840~1870MHZ) APPLICATION.............................................................................................. 15
6.1 PCS(1840~1870MHZ) TEST RESULT(S-PARAMETER, OIP3, P1, NF)...................................... 16
6.2 PCS(1840~1870MHZ) TEST RESULT(ACPR) ............................................................................. 17
7. WCDMA(2110~2170MHZ) APPLICATION ....................................................................................... 18
7.1 WCDMA(2110~2170MHZ) TEST RESULT(S-PARAMETER, OIP3, P1, NF) ............................... 19
7.2 WCDMA(2110~2170MHZ) TEST RESULT(ACLR) ...................................................................... 20
0---END---0
BeRex
High Power Amplifier
2
F-RD-1104
BeRex
1.
BT331
Application Note
BT331 _ 836MHz Application Note
Ref.
Des.
Description/
Part Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±20%
C7
DNP
C8
Vcc
C7
R1
C8
RF_IN
C1
L2
C11
R2
C 9
1
C 10
C6
R3
2
C3
C4
DNP
C9
1608 CAP
1pF
±5%
C10
1608 CAP
3.9pF
±5%
C11
1608 CAP
10pF
±5%
C12
1608 CAP
8pF
±5%
L1
1608 IND
33nH
±5%
L2
1608 IND
6.8nH
±5%
R1
1608 RES
4.3kohn
±5%
R2
1608 RES
100ohm
±5%
±5%
R3
1608 RES
0ohm
Q1
SOIC-8 PKG
BT331
C5
L1
Q1
8
C3
7
RF_OUT
3
6
4
5
C12
C2
TITLE
BT331 Evaluation Board
Note:
(836 MHz)
1. PCB: 31mil thick FR4
Drawing
Number
2. Distance between the center of the
Rev.
shunt Inductor (L2) and the input pin of BT331 is 5.25 mm.
3. Distance between the center of the
shunt cap (C10) and the input pin of BT331 is 3.70 mm.
Date
2011/04/11
4. Distance between the center of the
shunt cap (C11) and the input pin of BT331 is 1.50 mm.
FILE NAME
Drawn By
YH, Kwon
SHEET
5. Distance between the center of the
shunt cap (C12) and the output pin of BT331 is 8.25 mm
BeRex
High Power Amplifier
3
F-RD-1104
BeRex
BT331
Application Note
1.1 BT331_836MHz Test Result
Freq
Vcc
Icc
Gain
OIP3
[MHz]
[V]
[mA]
[dB]
[dBm]
836
5
426
SN
-
20.1
48.4
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
32.4
19.8
8.1
5.1
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone space
BeRex
High Power Amplifier
4
F-RD-1104
BeRex
2.
BT331
Application Note
BT331_ 836MHz (Resister Insertion) Application Note
Vcc
C7
R1
C8
C 10
RF_IN
C1
L 2
C11
R2
C 9
1
R4
C6
R3
C4
C5
Description/
Part Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±20%
C7
DNP
C8
DNP
C9
1608 CAP
1pF
±5%
C10
1608 CAP
3.9pF
±5%
C11
1608 CAP
10pF
±5%
C12
1608 CAP
8pF
±5%
L1
1608 IND
33nH
±5%
L2
1608 IND
6.8nH
±5%
R1
1608 RES
4.3kohn
±5%
R2
1608 RES
100ohm
±5%
R3
1608 RES
0ohm
±5%
R4
1608 RES
22ohm
±5%
Q1
SOIC-8 PKG
BT331
L1
Q1
2
C3
Ref.
Des.
8
C3
7
RF_ OUT
3
6
4
5
C12
C2
Note:
1. PCB: 31mil thick FR4
2. Distance between the center of thshunt Resistance (R4) and
the input pin of BT331 is10.0 mm.
TITLE
BT331 Evaluation Board
3. Distance between the center of the shunt Inductor (L2) and
(836 MHz)
the input pin of BT331 is 5.25 mm.
4. Distance between the center of the shunt cap (C10) and the
Drawing
Number
Rev.
input pin of BT331is3.70mm.
5..Distance between the center of the shunt cap(C11)and the
Date
input pin of BT331 is1.50 mm.
6. Distance between the center of the shunt cap (C12) and the
output pin ofBT331is8.25mm
BeRex
2011/04/11
FILE NAME
High Power Amplifier
5
Drawn By
YH, Kwon
SHEET
F-RD-1104
BeRex
BT331
Application Note
2.1 BT331_836MHz (Resiser Insertion) Test Result
Freq
Vcc
Icc
Gain
OIP3
[MHz]
[V]
[mA]
[dB]
[dBm]
836
5
427
SN
-
18.2
50.8
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
32.3
18.8
9.2
7.2
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone space
BeRex
High Power Amplifier
6
F-RD-1104
BeRex
3.
BT331
Application Note
BT331_CDMA(824~894MHz) Application Note
Vcc
C7
R1
C8
RF_IN
C1
L2
C11
R2
C 9
1
C 10
C6
R3
2
C3
C4
C5
Ref.
Des.
Description/
Part Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±20%
C7
DNP
C8
DNP
C9
1608 CAP
1pF
±5%
C10
1608 CAP
3.9pF
±5%
C11
1608 CAP
10pF
±5%
C12
1608 CAP
8pF
±5%
L1
1608 IND
33nH
±5%
L2
1608 IND
6.8nH
±5%
R1
1608 RES
4.3kohn
±5%
R2
1608 RES
100ohm
±5%
R3
1608 RES
0ohm
±5%
Q1
SOIC-8 PKG
BT331
L1
Q1
8
C3
7
RF_OUT
3
6
4
5
C12
C2
Note:
TITLE
1. PCB: 31mil thick FR4
BT331 Evaluation Board
2. Distance between the center of the
(824~894 MHz)
shunt Inductor (L2) and the input pin of BT331 is 5.25 mm.
3. Distance between the center of the
Drawing Number
Rev.
Date
Drawn By
shunt cap (C10) and the input pin of BT331 is 3.70 mm.
4.Distance between the center of the
2011/04/11
shunt cap (C11) and the input pin of BT331 is 1.50 mm.
FILE NAME
5. Distance between the center of the
YH, Kwon
SHEET
shunt cap (C12) and the output pin of BT331 is 8.25 mm.
BeRex
High Power Amplifier
7
F-RD-1104
BeRex
BT331
Application Note
3.1 BT331_CDMA(824~894MHz) Test Result
Freq
Vcc
Icc
Gain
OIP3
P1dB
IRL
ORL
NF
[MHz]
[V]
[mA]
[dB]
[dBm]
[dBm]
[dB]
[dB]
[dB]
-
824
5
420
20.1
49.5
32.3
21.0
7.2
5.3
-
848
5
420
20.0
47.8
32.0
19.1
8.6
5.3
-
894
5
420
19.8
48.5
31.3
11.6
14.5
5.3
SN
(1)
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone space
BeRex
High Power Amplifier
8
F-RD-1104
BeRex
BT331
Application Note
3.2 BT331_CDMA(824~894MHz) ACPR
[Test condition]
1FA / 750KHz- [email protected] power 24.1dBm
[Test condition]
4FA / 750KHz- [email protected] power 24.5dBm
BeRex
High Power Amplifier
9
F-RD-1104
BeRex
4.
BT331
Application Note
BT331_ 900MHz (Resister Insertion) Application Note
Ref. Des.
Description/
Part Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±20%
C7
C8
Vcc
C7
R1
R3
C8
C 10
RF_IN
C1
L2
C11
R2
C 9
1
R4
C6
C4
C9
1608 CAP
1pF
±5%
C10
1608 CAP
3.3pF
±5%
C11
1608 CAP
10pF
±5%
C12
1608 CAP
8pF
±5%
L1
1608 IND
18nH
±5%
L2
1608 IND
8.2nH
±5%
R1
1608 RES
4.3kohn
±5%
R2
1608 RES
100ohm
±5%
R3
1608 RES
0ohm
±5%
R4
1608 RES
36ohm
±5%
Q1
SOIC-8 PKG
BT331
C5
L1
Q1
2
C3
DNP
DNP
8
C3
7
RF_OUT
3
6
4
5
C12
C2
Note:
1. PCB: 31mil thick FR4
2. Distance between the center of theshunt Resistance (R4) and the
TITLE
input pin of BT331 is 10.0 mm.
BT331 Evaluation Board
(900 MHz)
Drawing
Rev.
Number
3. Distance between the center of theshunt Inductor (L2) and the
input pin of BT331 is 6.45 mm.
4. Distance between the center of the shunt cap (C10) and the input
pin of BT331is3.70 mm.
5..Distance between the center of the shunt cap (C11) and the input
pin of BT331 is1.50 mm.
Date
2011/04/11
FILE NAME
Drawn By
YH, Kwon
SHEET
6. Distance between the center of the shunt cap (C12) and the output
pin of BT331 is8.25mm
BeRex
High Power Amplifier
10
F-RD-1104
BeRex
BT331
Application Note
4.1 BT331_900MHz(Resister Insertion) Test Result
Freq
Vcc
Icc
Gain
OIP3
[MHz]
[V]
[mA]
[dB]
[dBm]
900
5
420
SN
-
16.9
48
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
32.3
11.6
14.4
7.2
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone space
BeRex
High Power Amplifier
11
F-RD-1104
BeRex
BT331
Application Note
5 BT331_WCMDA(920~960)MHz Application Note
Ref. Des.
Description/ Part
Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±5%
C7
DNP
C8
Vcc
C7
R1
R3
C8
RF_IN
C1
L2
C11
R2
C 9
1
C 10
C6
2
C3
C4
DNP
C9
1608 CAP
1pF
±5%
C10
1608 CAP
3.3pF
±5%
C11
1608 CAP
10pF
±5%
C12
1608 CAP
7pF
±5%
L1
1608 IND
33nH
±5%
L2
1608 IND
8.2nH
±5%
R1
1608 RES
4.3kohn
±5%
R2
1608 RES
100ohm
±5%
R3
1608 RES
0ohm
±5%
Q1
SOIC-8 PKG
BT331
C5
L1
Q1
8
C3
7
RF_OUT
3
6
4
5
C12
C2
Note:
1. PCB: 31mil thick FR4
TITLE
2. Distance between the center of the
BT331 Evaluation Board
shunt Inductor (L2) and the input pin of BT331 is 6.45 mm.
3. Distance between the center of the
shunt cap (C10) and the input pin of BT331 is 3.70 mm.
(920~960 MHz)
Drawing
Rev.
Number
4.Distance between the center of the
shunt cap (C11) and the input pin of BT331 is 1.50 mm.
2011/04/11
5. Distance between the center of the
shunt cap (C12) and the output pin of BT331 is 8.25 mm
BeRex
Date
High Power Amplifier
12
FILE NAME
Drawn By
YH, Kwon
SHEET
F-RD-1104
BeRex
BT331
Application Note
5.1 BT331_WCDMA(920~960MHz) Test Result
Freq
Vcc
Icc
Gain
OIP3
P1dB
IRL
ORL
NF
[MHz]
[V]
[mA]
[dB]
[dBm]
[dBm]
[dB]
[dB]
[dB]
-
920
5
410
19.1
49.0
32.4
22.8
7.9
5.2
-
940
5
410
19.0
47.9
32.3
17.7
9.2
5.2
-
960
5
410
18.9
48.0
31.9
14.2
11.3
5.2
SN
(1)
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone spaec
BeRex
High Power Amplifier
13
F-RD-1104
BeRex
BT331
Application Note
5.2 BT331_WCDMA(920~960MHz) ACLR
[Test condition]
 4FA / 5MHz- [email protected] power 21.7dBm
[Test condition]
 6FA / 5MHz- [email protected] power 20.7dBm
BeRex
High Power Amplifier
14
F-RD-1104
BeRex
BT331
Application Note
6. BT331_PCS(1840~1870MHz) Application Note
Ref. Des.
Description/
Part Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±5%
C7
DNP
C8
1608 CAP
2pF
±5%
C9
1608 CAP
1.8pF
±5%
C10
1608 CAP
3pF
±5%
C11
1608 CAP
0.5pF
±5%
C12
1608 CAP
2.7pF
±5%
C13
1608 CAP
3pF
±5%
L1
1608 IND
R1
R2
56nH
±5%
1608 RES
4.3kohn
±5%
1608 RES
100ohm
±5%
R3
1608 RES
0ohm
±5%
Q1
SOIC-8 PKG
BT331
Vcc
C7
C6
R1
R3
C8
1
C 10
RF_IN
C1
C13
C11
R2
C 9
2
C3
C4
C5
L1
Q1
8
C3
7
RF_ OUT
3
6
4
5
C12
C2
TITLE
BT331 Evaluation Board
Note:
(1840~1870 MHz)
1. PCB: 31mil thick FR4
Drawing
Number
2. Distance between the center of the
shunt Inductor(C13 and the input pin of BT331 is 5.25mm.
Rev.
3. Distance between the center of the
shunt cap (C10) and the input pin of BT331 is 3.70 mm.
Date
4.Distance between the center of the
2011/04/11
shunt cap (C11) and the input pin of BT331 is 1.50 mm.
FILE NAME
Drawn By
YH, Kwon
SHEET
5. Distance between the center of the
shunt cap (C12) and the output pin of BT331 is 2.25 mm
BeRex
High Power Amplifier
15
F-RD-1104
BeRex
BT331
Application Note
6.1 BT331_PCS(1840~1870MHz)Test Result
Freq
Vcc
Icc
Gain
OIP3
P1dB
IRL
ORL
NF
[MHz]
[V]
[mA]
[dB]
[dBm]
[dBm]
[dB]
[dB]
[dB]
-
1840
5
408
14.5
50.8
33.4
17.8
11.5
5.1
-
1855
5
408
14.4
49.7
33.5
16.1
12.3
5.1
-
1870
5
408
14.3
48.8
33.6
13.7
13.4
5.14
SN
(1)
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone space
BeRex
High Power Amplifier
16
F-RD-1104
BeRex
BT331
Application Note
6.2 BT331_PCS(1840~1870MHz) ACPR
[Test condition]
 1FA / 750KHz- [email protected] power 25.1dBm
[Test condition]
4FA / 750KHz- [email protected] power 26.8dBm
BeRex
High Power Amplifier
17
F-RD-1104
BeRex
7.
BT331
Application Note
BT331_WCDMA(2110~2170MHz) Application Note
Ref. Des.
Description/
Part Number
Values
Tolerance
C1
1608 CAP
100pF
±5%
C2
1608 CAP
100pF
±5%
C3
1608 CAP
100pF
±5%
C4
1608 CAP
1000pF
±5%
C5
1608 CAP
1uF
±5%
C6
3216 Tantal
10uF
±5%
C7
DNP
C8
±5%
1608 CAP
5pF
C10
1608 CAP
1.8pF
±5%
C11
1608 CAP
0.5pF
±5%
C12
1608 CAP
2pF
±5%
C13
1608 CAP
2pF
±5%
L1
1608 IND
22nH
±5%
R1
1608 RES
5.6kohn
±5%
R2
1608 RES
100ohm
±5%
±5%
C9
DNP
R3
1608 RES
0ohm
Q1
SOIC-8 PKG
BT331
Vcc
C7
C6
R1
R3
C8
1
C 10
RF_IN
C1
C13
C11
R2
C 9
2
C3
C4
C5
L1
Q1
8
C3
7
RF_ OUT
3
6
4
5
C12
C2
TITLE
BT331 Evaluation Board
Note:
(2110~2170 MHz)
1. PCB: 31mil thick FR4
Drawing
Number
2. Distance between the center of the
Rev.
shunt Inductor (C13) and the input pin of BT331 is 5.25 mm.
3. Distance between the center of the
shunt cap (C10) and the input pin of BT331 is 3.70 mm.
Date
2011/04/11
4.Distance between the center of the
shunt cap (C11) and the input pin of BT331 is 1.50 mm.
FILE NAME
Drawn By
YH, Kwon
SHEET
5.Distance between the center of the
shunt cap (C12) and the output pin of BT331 is 2.25 mm.
BeRex
High Power Amplifier
18
F-RD-1104
BeRex
BT331
Application Note
7.1 BT331_ WCDMA(2130~2170MHz) Test Result
Freq
Vcc
Icc
Gain
OIP3
P1dB
IRL
ORL
NF
[MHz]
[V]
[mA]
[dB]
[dBm]
[dBm]
[dB]
[dB]
[dB]
-
2110
5
405
13.2
50.5
32.5
12.5
11.8
5.2
-
2140
5
405
13.4
50
32.4
17.0
13
5.2
-
2170
5
405
13.4
48
32
28.3
15.1
5.2
SN
(1)
(1) OIP3 was tested @Pout=20dBm/tone (CW) 1MHz tone space
BeRex
High Power Amplifier
19
F-RD-1104
BeRex
BT331
Application Note
7.2 BT331_ WCDMA(2110~2170MHz) ACLR
[Test condition]
 4FA / 5MHz- [email protected] power 22.3dBm
[Test condition]
 6FA / 5MHz- [email protected] power 21.5dBm
BeRex
High Power Amplifier
20
F-RD-1104