BeRex BMT332 Application Note RF MMIC Innovator www.berex.com [Classification] Application Note [Date] 2014.01 [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent E5071B - SA_Agilent N9020A - SG_Agilent 4438C - SG_IFR 3416 High Power Amp BMT332 FR4 Application Note BeRex High Power Amplifier 1 F-RD-1401 BeRex BMT332 Application Note Contents RF MMIC INNOVATOR WWW.BEREX.COM ............................................................. 1 1. 850MHZ APPLICATION ..................................................................................................................... 3 1.1 850MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ............................................................. 4 1.2 850MHZ TEST RESULT(ACPR) ..................................................................................................... 5 2. 1750MHZ APPLICATION ................................................................................................................... 6 2.1 1750MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) .......................................................... 7 2.2 1750MHZ TEST RESULT(ACPR) .................................................................................................. 8 3. 1850MHZ APPLICATION ................................................................................................................... 9 3.1 1850MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 10 3.2 1850MHZ TEST RESULT(ACPR) ................................................................................................ 11 4. 1960MHZ APPLICATION ................................................................................................................. 12 4.1 1960MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 13 4.2 1960MHZ TEST RESULT(ACPR) ................................................................................................. 14 5. 2140MHZ APPLICATION ................................................................................................................. 15 5.1 2140MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 16 5.2 2140MHZ TEST RESULT(ACPR) ................................................................................................. 17 6. 2350MHZ APPLICATION ................................................................................................................. 18 6.1 2350MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 19 6.2 2350MHZ TEST RESULT(ACLR) ................................................................................................. 20 0---END---0 BeRex High Power Amplifier 2 F-RD-1401 BeRex BMT332 Application Note 1. BT332 _ 850MHz Application Note Schematic Diagram BOM Marks C1 1206 10uF C2 0603 N/A C3 0603 68pF C4 0603 1nF C5 0603 N/A C6 0603 3.3pF C7 0603 100pF C8 0603 5pF C9 0603 N/A C10 0603 10pF C11 0603 100pF C12 0603 1uF C13 0603 100pF C14 0603 1nF C15 1206 10uF L1 0603 5.6nH L2 0603 22nH Tantalum High Q Tantalum L3 1008 22nH Coil R1 0603 100 Ω ±5% R2 0603 270 Ω ±5% PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L1 7.8mm Input pin C8 5.3mm Output pin C10 8.8mm Pin 16 C3 7.2mm Pin 16 C6 2.0mm Pin 20 C4 5.0mm 1. Pin 16 & 20 is used for Vce of the inner bias circuit. To eliminate bias line resonance you need above 10mm transmission line and adjust the position of C2, C3, C4 ,C5 and C6. Also you can adjust spectrum regrowth about bandwidth of signals which you want. 2. C10 : We recommend High-Q capacitor for better output power performance. In this document we used ‘10pF(251R14S100JV4, EIA 0603) of Johanson Technology. 3. You could change C7 from 100 pF to 0 Ω or a line if you have other DC block front of BMT332. BeRex High Power Amplifier 3 F-RD-1401 BeRex BMT332 Application Note 1.1 BMT332_850MHz Test Result Freq Vcc Iref Icq Gain OIP3 [MHz] [V] [mA] [mA] [dB] [dBm] 850 5 32 671 33.4 49 (1) P1dB IRL ORL NF [dBm] [dB] [dB] [dB] 33 23.5 10.5 7.7 (1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset BeRex High Power Amplifier 4 F-RD-1401 BeRex BMT332 Application Note 1.2 BT332_850MHz ACLR Test Result 3GPP WCDMA TM1 +64DPCH 1FA 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 5MHz 3GPP LTE E-TM3.1 10MHz 3GPP LTE E-TM3.1 15MHz 3GPP LTE E-TM3.1 20MHz BeRex High Power Amplifier 5 F-RD-1401 BeRex BMT332 Application Note 2. BMT332_1750MHz Application Note Schematic Diagram BOM Marks C1 1206 N/A C2 0603 1nF C3 0603 1nF C4 0603 N/A C5 0603 1nF C6 0603 2pF C7 0603 0Ω C8 0603 3.3pF C9 0603 2.7pF C10 0603 4.3pF C11 0603 3.9pF C12 0603 1uF C13 0603 100pF C14 0603 1nF C15 1206 10uF L1 0603 N/A L2 0603 12nH Tantalum High Q Tantalum L3 1008 22nH Coil R1 0603 100 Ω ±5% R2 0603 270 Ω ±5% PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin C8 5.8mm Input pin C9 3.9mm Output pin C10 2.8mm Pin 16 C3 7.2mm Pin 16 C6 2.0mm Pin 16 C5 1.0mm Pin 20 C2 10.6mm 1. Pin 16 & 20 is used for Vce of the inner bias circuit. To eliminate bias line resonance you need above 10mm transmission line and adjust the position of C2, C3, C4 ,C5 and C6. Also you can adjust spectrum regrowth about bandwidth of signals which you want. 2. C10 : We recommend High-Q capacitor for better output power performance. In this document we used ‘4.3pF(251R14S4R3BV4, EIA 0603) of Johanson Technology. 3. C7 : Non-critical 0 Ω BeRex High Power Amplifier 6 F-RD-1401 BeRex BMT332 Application Note 2.1 BMT332 1750MHz Test Result Freq Vcc Iref Icq Gain OIP3 [MHz] [V] [mA] [mA] [dB] [dBm] 1750 5 32 669 27.6 47 (1) P1dB IRL ORL NF [dBm] [dB] [dB] [dB] 33.5 28.9 11.1 6.2 (1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset BeRex High Power Amplifier 7 F-RD-1401 BeRex BMT332 Application Note 2.2 BMT332 1750MHz ACPR Test Result 3GPP WCDMA TM1 +64DPCH 1FA 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 5MHz 3GPP LTE E-TM3.1 10MHz 3GPP LTE E-TM3.1 15MHz 3GPP LTE E-TM3.1 20MHz BeRex High Power Amplifier 8 F-RD-1401 BeRex BMT332 Application Note 3. BMT332 1850MHz Application Note Schematic Diagram BOM Marks C1 1206 N/A C2 0603 1nF C3 0603 1nF C4 0603 N/A C5 0603 1nF C6 0603 3pF C7 0603 0Ω C8 0603 3.3pF C9 0603 2.7pF C10 0603 4.3pF C11 0603 3.9pF C12 0603 1uF C13 0603 100pF C14 0603 1nF C15 1206 10uF L1 0603 N/A L2 0603 12nH Tantalum High Q Tantalum L3 1008 12nH Coil R1 0603 100 Ω ±5% R2 0603 270 Ω ±5% PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin C8 5.0mm Input pin C9 3.5mm Output pin C10 2.4mm Pin 16 C3 5.5mm Pin 16 C6 2.0mm Pin 19 C5 1.0mm Pin 20 C2 10.6mm 1. Pin 16 & 20 is used for Vce of the inner bias circuit. To eliminate bias line resonance you need above 10mm transmission line and adjust the position of C2, C3, C4 ,C5 and C6. Also you can adjust spectrum regrowth about bandwidth of signals which you want. 2. C10 : We recommend High-Q capacitor for better output power performance. In this document we used ‘4.3pF(251R14S4R3BV4, EIA 0603) of Johanson Technology. 3. C7 : Non-critical 0 Ω BeRex High Power Amplifier 9 F-RD-1401 BeRex BMT332 Application Note 3.1 BMT332 1850MHz Test Result Freq Vcc Iref Icq Gain OIP3 [MHz] [V] [mA] [mA] [dB] [dBm] 1850 5 32 669 26.9 47 (1) P1dB IRL ORL NF [dBm] [dB] [dB] [dB] 33.5 25 12.9 6.5 (1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset BeRex High Power Amplifier 10 F-RD-1401 BeRex BMT332 Application Note 3.2 BMT332 1850MHz ACPR Test Result 3GPP WCDMA TM1 +64DPCH 1FA 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 5MHz 3GPP LTE E-TM3.1 10MHz 3GPP LTE E-TM3.1 15MHz 3GPP LTE E-TM3.1 20MHz BeRex High Power Amplifier 11 F-RD-1401 BeRex BMT332 Application Note 4. BMT332 1960MHz Application Note Schematic Diagram BOM Marks C1 1206 N/A C2 0603 1nF C3 0603 1nF C4 0603 N/A C5 0603 1nF C6 0603 2pF C7 0603 0Ω C8 0603 3.3pF C9 0603 2.7pF C10 0603 4.3pF C11 0603 3.9pF C12 0603 1uF C13 0603 100pF C14 0603 1nF C15 1206 10uF L1 0603 N/A L2 0603 12nH Tantalum High Q Tantalum L3 1008 12nH Coil R1 0603 100 Ω ±5% R2 0603 270 Ω ±5% PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin C8 5.0mm Input pin C9 3.0mm Output pin C10 2.0mm Pin 16 C3 5.0mm Pin 16 C6 2.0mm Pin 19 C5 1.0mm Pin 20 C2 10.6mm 1. Pin 16 & 20 is used for Vce of the inner bias circuit. To eliminate bias line resonance you need above 10mm transmission line and adjust the position of C2, C3, C4 ,C5 and C6. Also you can adjust spectrum regrowth about bandwidth of signals which you want. 2. . C10 : We recommend High-Q capacitor for better output power performance. In this document we used ‘4.3pF(251R14S4R3BV4, EIA 0603) of Johanson Technology. 3. C7 : Non-critical 0 Ω BeRex High Power Amplifier 12 F-RD-1401 BeRex BMT332 Application Note 4.1 BMT332 1960MHz Test Result Freq Vcc Iref Icq Gain [MHz] [V] [mA] [mA] [dB] 1960 5 32 663 26.6 OIP3 [dBm] 47 (1) P1dB IRL ORL NF [dBm] [dB] [dB] [dB] 33.5 26.1 13.2 6.4 (1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset BeRex High Power Amplifier 13 F-RD-1401 BeRex BMT332 Application Note 4.2 BMT332 1960MHz ACLR Test Result 3GPP WCDMA TM1 +64DPCH 1FA 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 5MHz 3GPP LTE E-TM3.1 10MHz 3GPP LTE E-TM3.1 15MHz 3GPP LTE E-TM3.1 20MHz BeRex High Power Amplifier 14 F-RD-1401 BeRex BMT332 Application Note 5. BMT332 2140MHz Application Note Schematic Diagram BOM Marks C1 1206 10uF C2 0603 N/A C3 0603 1nF C4 0603 1nF C5 0603 1nF C6 0603 3pF C7 0603 0Ω C8 0603 3pF C9 0603 2.7pF C10 0603 3.9pF C11 0603 4.3pF C12 0603 1uF C13 0603 100pF C14 0603 1nF C15 1206 10uF L1 0603 N/A L2 0603 12nH Tantalum High Q Tantalum L3 1008 10nH Coil R1 0603 100 Ω ±5% R2 0603 270 Ω ±5% PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin C8 4.1mm Input pin C9 2.2mm Output pin C10 1.9mm Pin 16 C3 3.0mm Pin 16 C6 2.0mm Pin 19 C5 1.0mm Pin 20 C2 5.0mm 1. Pin 16 & 20 is used for Vce of the inner bias circuit. To eliminate bias line resonance you need above 10mm transmission line and adjust the position of C2, C3, C4 ,C5 and C6. Also you can adjust spectrum regrowth about bandwidth of signals which you want. 2.. C10 : We recommend High-Q capacitor for better output power performance. In this document we used ‘3.9pF(251R14S3R9BV4, EIA 0603) of Johanson Technology. 3. C7 : Non-critical 0 Ω BeRex High Power Amplifier 15 F-RD-1401 BeRex BMT332 Application Note 5.1 BMT332 2140MHz Test Result Freq Vcc Iref Icq Gain OIP3 [MHz] [V] [mA] [mA] [dB] [dBm] 2140 5 32 667 26 47 (1) P1dB IRL ORL NF [dBm] [dB] [dB] [dB] 33.2 18.5 11.9 6.8 (1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset BeRex High Power Amplifier 16 F-RD-1401 BeRex BMT332 Application Note 5.2 BMT332 2140MHz ACLR Test Result 3GPP WCDMA TM1 +64DPCH 1FA 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 5MHz 3GPP LTE E-TM3.1 10MHz 3GPP LTE E-TM3.1 15MHz 3GPP LTE E-TM3.1 20MHz BeRex High Power Amplifier 17 F-RD-1401 BeRex BMT332 Application Note 6. BMT332 2350MHz Application Note Schematic Diagram BOM Marks C1 1206 10uF C2 0603 N/A C3 0603 N/A C4 0603 0.75pF C5 0603 1nF C6 0603 1nF C7 0603 0Ω C8 0603 2.2pF C9 0603 2.7pF C10 0603 3.3pF C11 0603 22pF C12 0603 1uF C13 0603 100pF C14 0603 1nF C15 1206 10uF L1 0603 N/A L2 0603 15nH Tantalum High Q Tantalum L3 1008 10nH Coil R1 0603 100 Ω ±5% R2 0603 270 Ω ±5% PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin C8 3.6mm Input pin C9 0.8mm Output pin C10 1.4mm Pin 16 C6 2.0mm Pin 19 C5 1.0mm Pin 20 C4 5.0mm 1. Pin 16 & 20 is used for Vce of the inner bias circuit. To eliminate bias line resonance you need above 10mm transmission line and adjust the position of C2, C3, C4 ,C5 and C6. Also you can adjust spectrum regrowth about bandwidth of signals which you want. 2.C10 : We recommend High-Q capacitor for better output power performance. In this document we used ‘3.3pF(251R14S3R3BV4, EIA 0603) of Johanson Technology. 3. C7 : Non-critical 0 Ω BeRex High Power Amplifier 18 F-RD-1401 BeRex BMT332 Application Note 6.1 BMT332 2350MHz Test Result Freq Vcc Iref Icq Gain OIP3 [MHz] [V] [mA] [mA] [dB] [dBm] 2350 5 32 667 26 47 (1) P1dB IRL ORL NF [dBm] [dB] [dB] [dB] 33.2 18.5 11.9 5.8 (1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset BeRex High Power Amplifier 19 F-RD-1401 BeRex BMT332 Application Note 6.2 BMT332 2140MHz ACLR Test Result 3GPP WCDMA TM1 +64DPCH 1FA 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 5MHz 3GPP LTE E-TM3.1 10MHz 3GPP LTE E-TM3.1 15MHz 3GPP LTE E-TM3.1 20MHz BeRex High Power Amplifier 20 F-RD-1401