SCHOTTKY BARRIER DIODE VRRM : 100V

TH09/2479
TH97/2478
www.eicsemi.com
BAT41
IATF 0113686
SGS TH07/1033
SCHOTTKY BARRIER DIODE
DO - 35 Glass
(DO-204AH)
VRRM : 100V
FEATURES :
• For general purpose applications
• This diode features low turn-on voltage and high
breakdown voltage. This device is protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in a MiniMELF case
with type designation LL41
• Pb / RoHS Free
1.00 (25.4)
min.
0.079(2.0 )max.
0.150 (3.8)
max.
Cathode
Mark
1.00 (25.4)
min.
0.020 (0.52)max.
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Value
Unit
VRRM
100
V
IF
100 (1)
mA
Repetitive Peak Forward Current at tp < 1s
IFRM
350 (1)
mA
Forward Surge Current at tp = 10 ms,
IFSM
750
(1)
mA
Power Dissipation
PD
400(1)
Continuous Forward Current
Thermal Resistance Junction to Ambient Air
RθJA
300
W
°C/W
(1)
Junction Temperature
TJ
125
°C
Ambient Operating Temperature Range
Ta
-65 to + 125
°C
Storage temperature range
TS
-65 to + 150
°C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Reverse Breakdown Voltage
Reverse Current
(2)
Forward Voltage Drop
(2)
V(BR)R
IR
(2)
VF
Diode Capacitance
Cd
Reverse Recovery Time
Trr
Test Condition
IR = 100 µA
VR = 50 V
VR = 50 V , TJ = 100 °C
IF = 1mA
IF = 200mA
VR = 0 V, f = 1MHz
IF = 10mA, IR = 10mA,
Irr = 1mA , RL = 100Ω
Min
100
-
Typ
Max
Unit
110
0.4
2
100
20
0.45
1.0
-
V
nA
µA
5
-
ns
V
pF
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
(2) Pulse test, tp = 300µs
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Rev. 02 : March 24, 2005