MYX28F00AM29EWH 1Gb, 3V Parallel NOR Flash Embedded Memory Advanced information. Subject to change without notice. Features • BLANK CHECK operation to verify an erased block • Tin Lead solder alloy Sn63Pb37 • Supply voltage VCC = 2.7–3.6V (program, erase, read) VCCQ = 1.65–3.6V (I/O buffers) • Asynchronous random/page read Page size: 16 words or 32 bytes Page access: 25ns Random access: 100ns (Fortified BGA); 110ns (TSOP) • Buffer program: 512-word program buffer • Program time 0.88μs per byte (1.14 MB/s) TYP when using full 512-word buffer size in buffer program • Memory organization Uniform blocks: 128-Kbytes or 64-Kwords each • Program/erase controller Embedded byte/word program algorithms • Program/erase suspend and resume capability Read from any block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation • Unlock bypass, block erase, chip erase, and write to buffer capability Fast buffered/batch programming Fast block/chip erase • VPP/WP# pin protection Protects first or last block regardless of block protection settings • Software protection Volatile protection Nonvolatile protection Password protection Password access • Extended memory block 128-word (256-byte) block for permanent, secure identification Programmed or locked at the factory or by the customer • Low power consumption: Standby mode • JESD47H-compliant 100,000 minimum ERASE cycles per block Data retention: 20 years (TYP) • 65nm multilevel cell (MLC) process technology • Fortified BGA • Green packages available Halogen-free • Operating temperature Ambient: -40°C to +85°C Table 1: Standard Part Number Density and Package Density Package (RC) 1GB 64 Ball Fortified BGA 11x13mm Micron Part. No. PC28F00AM29EWHA October 21, 2014 • Revision 1.3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Form #: CSI-D-686 Document 003 MYX28F00AM29EWH • 1Gb, 3V Parallel NOR Flash Embedded Memory Advanced information. Subject to change without notice. 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Signal Assignments 64-Ball Fortified BGA (11mm x 13mm) Figure 4: 64-Ball Fortified BGA Figure 1: Signal Assignments 1 2 RFU A3 A26 6 7 8 8 7 6 A7 RY/BY# WE# A9 A13 RFU RFU A13 A9 A4 A17 VPP/WP# RST# A8 A12 A22 A22 A12 RFU A2 A6 A18 A21 A10 A14 A23 A23 RFU A1 A5 A20 A19 A11 A15 VCCQ RFU A0 D0 D2 D5 D7 A16 VCCQ CE# D8 D10 D12 RFU OE# D9 D11 RFU VSS D1 D3 3 4 5 2 1 WE# RY/BY# A7 A3 RFU A8 RST# VPP/WP# A17 A4 A26 A14 A10 A21 A18 A6 A2 RFU VCCQ A15 A11 A19 A20 A5 A1 RFU A16 D7 D5 D2 D0 A0 RFU D14 BYTE# A24 A24 BYTE# D14 D12 D10 D8 CE# VCCQ VCC D13 D15/A-1 A25 A25 D15/A-1 D13 VCC D11 D9 OE# RFU D4 D6 RFU D6 D4 D3 D1 VSS RFU 5 4 3 A A B B C C D D E E VSS VSS F F G G H H VSS RFU Fortified BGA 256Mb, Top view – ball side down VSS Fortified BGA 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Bottom view – ball side up Package Dimensions 1.Note: A-1 isA25 the least significant address bit in x8 mode.it is RFU. valid 1Gb and above; otherwise, FigureNotes: 31: 64-Ball FortifiedisBGA –for 11mm x 13mm 2. A23 is valid for 256Mb and above; otherwise, it is RFU. 3. A24 is valid for 512Mb and above; otherwise, it is RFU. 4. A25 is valid for 1Gb and above; otherwise, it is RFU.0.80 TYP 5. A26 is valid for 2Gb only; otherwise it is RFU. Figure 2: Package Dimensions Seating plane 0.10 64X Ball A1 ID 8 7 6 5 4 3 2 1 3.00 TYP A B C 13.00 ±0.10 D 7.00 TYP 11 PDF: 09005aef849b4b09 m29ew_256mb_2gb.pdf - Rev. B 8/12 EN E Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. F G H 1.00 TYP 1.00 TYP 0.60 ±0.05 2.00 TYP 7.00 TYP 11.00 ±0.10 Note: 1.40 MAX 0.49 TYP/ 0.40 MIN Note: All dimensions are in millimeters. 1. All dimensions are in millimeters. October 21, 2014 • Revision 1.3 Micross US (Americas) • 407.298.7100 Micross UK (EMEA & ROW) • +44 (0) 1603 788967 [email protected] www.micross.com Form #: CSI-D-686 Document 003