5

Notebook
Table of Contents
Power Management, Charger Power............................................................................................................................... 3
Power Management, CPU Power..................................................................................................................................... 6
Power Management, System-,DDR-,Chipset-,VGA-Power.............................................................................................9
System Hardware, Load Switch..................................................................................................................................... 13
System Hardware, Opto Sensor..................................................................................................................................... 14
System Hardware, Protection.........................................................................................................................................15
page 1
Notebook
VISHAY components used for Notebook functions include:
• Power MOSFETS
• Controller ICs
• LDOs
• IrDA and IR Receiver Modules
• Load and Signal Switches
• Switching Diodes and Rectifiers
• Transient/Overvoltage Protection Devices
• ESD Protection Devices
• Capacitors
• Resistors
• NTC and PTC Thermistors
• Inductors/EMI Filters
• Secondary Protection Fuses
Application Overview
Notebook computer design is separated into two segment: Power and Hardware. The Power Segment involves hardware
device power sources. For power sources, using a switching mode is an excellent way to improve converter efficiency.
High current is its key feature. Power sources that use this technology include CPUs, DDR systems, chipsets, chargers,
and VGA power sources. Low-dropout linear power is another solution for converter efficiency. Its main benefits are lower
prices and simple circuitry. The Hardware Segment can be regarded as a non-power segment. Types of hardware include
SD cards, USB ports, fingerprint recognition sysyems, remote controls, audio controls, touchscreens and touchpads,
ambient light sensors, S-video ports, and wireless transmission sysytems such as IrDA® and Bluetooth®. Some of these
need similar functions such as ESD protection, current limiting, and load switching. Different solutions based on different
specifications are suggested.
page 2
Notebook : Power Management, Charger Power
Adaptor / Battery Switch
Product Name
Si4413ADY
Status
NEW
Description
Features
Package
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
Low rDS(on)
ID=15A; rDS(on)=0.0075Ω
Qgd= 61nC; VGSth= -1 V;
SMD
SO-8
Si4425BDY
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
VGS = ± 20V
ID=-11.4A; rDS(on)=0.012Ω
Qgd= 64nC; VGSth= -1 V;
SMD
SO-8
Si4431BDY
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
VGS = ± 20V
ID=-7.5A; rDS(on)=0.030Ω
Qgd= 13nC; VGSth= -1 V;
SMD
SO-8
Si4435BDY
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
VGS = ± 20V
ID=-9.1A; rDS(on)=0.020Ω
Qgd= 33nC; VGSth= -1 V;
SMD
SO-8
Si4483EDY
P-Channel 30-V (D-S) MOSFET
With 3-kV ESD Protection
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-14A; rDS(on)=0.0085Ω
VGSth = -1.0 V;
SMD
SO-8
Si4825DY
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-11.5A; rDS(on)=0.014Ω
Qg=15nC; VGSth= -1 V;
SMD
SO-8
Si4835BDY
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-9.6A; rDS(on)=0.018Ω
Qg=25nC; VGSth= -1 V;
SMD
SO-8
Si4890DY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
High VGS = ± 25V
ID=-11A; rDS(on)=0.012Ω
Qg=14.2nC; VGSth=0.8 V;
SMD
SO-8
Si7459DP
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
Low Thermal Resistance PowerPAK®
Low rDS(on), high VGS
ID=-22A; rDS(on)=0.0068Ω
Qg= 113nC; VGSth= -1V
SMD
PowerPAK SO-8
Si7945DP
Dual P-Channel 30-V (D-S) MOSFET
VGS= ± 20V;
TrenchFET® Power MOSFET
Low rDS(on);
ID=-10.9A; rDS(on)=0.020Ω
Qg= 49 nC; VGSth= -1 V
SMD
PowerPAK SO-8
Q-Level
Dual Mofets
Product Name
Status
Description
Features
Package
Si4830 ADY
Dual N-Ch. 30-V (D-S) MOSFET w.
SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 1.4 V;
SMD
SO-8
Si4834BDY
Dual N-Ch. 30-V (D-S) MOSFET w.
SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8
Si4914DY
Dual N-Ch 30-V (D-S) MOSFET w.
SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
ID = 7 A / 7.4 A
SMD
rDS(on)=0.032Ω / 0.027Ω
SO-8
Qgd=1.7 / 2.2nC; VGSth=1V
Si4952DY
Dual N-Channel 25-V (D-S) MOSFET
DUAL
VDS = 25V; VGS = ± 16V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
Q-Level
SMD
SO-8
High-Side MOSFETs
Product Name
Status
Description
Features
Package
Si4800BDY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8
Si4812BDY
N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
SMD
SO-8
Q-Level
page 3
Product Name
Status
Si4835BDY
Description
Features
Package
VDS = 30V; VGS = ± 20V
Qgd= 2.6nC; VGSth= 1 V;
P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-9.6A; rDS(on)=0.018Ω
Qg=25nC; VGSth= -1 V;
SMD
SO-8
Si7230DN
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
High power dissipation
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212
Si7326DN
NEW
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
High power dissipation
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212
Status
Description
Features
Q-Level
Inductors
Product Name
Package
IHLP2525CZ-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Miniature Power
Profile height ≤ 3 mm
0.1 µH to 10 µH
IDC up to 60 A
SMD
2525
7.3x7.3x3.0mm
IHLP4040DZ-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 µH to 10 µH
IDC up to 90 A
SMD
4040
11.5x11.5x4.0mm
IHLP4040DZ-11
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 µH to 100 µH
IDC up to 46 A
SMD
4040
11.5x11.5x4.0mm
IHLP5050CE-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 3.5mm
0.1 µH to 10 µH
IDC up to 84 A
SMD
5050
13.5x13.5x3.5mm
Q-Level
Low Side MOSFETs
Product Name
Status
Description
Features
Package
Si4800BDY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8
Si4812BDY
N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8
Si7230DN
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
High power dissipation
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212
Si7326DN
NEW
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
High power dissipation
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212
Status
Description
Features
Q-Level
Resistors
Product Name
Package
WSL2010-18
1 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.001Ω to 0.5Ω
TCR <= ± 75ppm
SMD
2010
5.08x2.54x0.635
WSL2512-18
2 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.0005Ω to 0.04Ω
TCR <= ± 75ppm
SMD
2512
6.36x3.18x0.635
1 Watt Power Metal Strip® Resistors;
Very High Power- Small Size;
Current Sensing;
High power & reliability
R=0.001Ω to 0.05Ω
P70 = 1W
SMD
1206
3.2x1.6x0.635mm
WSLP1206
NEW
Q-Level
Schottky Diodes
Product Name
B140
Status
Description
Schottky Barrier Rectifier; Low Profile;
Guardring for overload protection;
High Surge Capabilities;
Features
VRRM = 40 V;
IF = 1 A, VF = 0.52 V,
Package
Q-Level
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
page 4
Product Name
Status
Description
Features
Package
B240 A
High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
Low Profile
VRRM = 40 V;
IF = 2 A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
B340 A
High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
RoHS-Compliant
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
MSS1P4
Schottky Barrier Rectifiers
SMD; #SMP# Series;
VRRM = 40 V;
IF = 1 A; VF = 0.41 V;
SMD
MicroSMP
2.7x1.4x0.75mm
SS10P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
High power /small package
VRRM = 40 V;
IF = 10 A;VF = 0.384 V
SMD
TO-277A (SMPC)
6.65x4.75x1.2mm
SS1P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.4 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS2P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.43 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS3P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;#SMP# Series;
Small package
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS5P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;#SMP# Series;
High power /small package
VRRM = 40 V;
IF = 5 A, VF = 0.403 V,
SMD
TO-277A (SMPC)
6.65x4.75x1.2mm
SS8P4C
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;#SMP# Series;
Dual Common-Cathode;
High power /small package
VRRM = 40 V;
IF = 8 A, VF = 0.42 V,
SMD
TO-277A (SMPC)
6.65x4.75x1.2mm
SSC54
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
Small Outline
VRRM = 40 V;
IF = 5 A, VF = 0.36V,
SMD
DO-220AA (SMC)
8.13x6.22x2.62mm
Q-Level
Signal Mosfet
Product Name
Status
2N7002K
Description
N-Ch 60-V (D-S)MOSFET; 2KV ESD
protected
Low On-Resistance; Low Threshold;
Low Input Capacitance; Fast Switch
Features
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
Package
Q-Level
SMD
TO-236 (SOT-23)
Switch Diodes
Product Name
Status
Description
Features
Package
1N4148WS-V
Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
RoHS-Compliant;
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
SMD
SOD323
2.85x1.5x1.15mm
BAT54 A-V
Small Signal Schottky Diodes;
Single & Dual Schematics;
Very Low Turn-On and Fast Switching
Dual, VRRM = 30 V;
IF = 0.2 A, VF = 0.8 V,
SMD
TO-236 (SOT-23)
3.0x2.5x1.1mm
Q-Level
Thin Pack
page 5
Notebook : Power Management, CPU Power
High-Side MOSFETs
Product Name
Status
Description
Features
Package
Si4386DY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd; low rDS(on)
ID=16A; rDS(on)=0.0095Ω
Qgd = 3.0 nC;
Si4392DY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
SMD
ID=12.5A;rDS(on)=0.01375Ω SO-8
Qgd = 2.6 nC;
Si4682DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
ID=12A; rDS(on)=0.0135Ω
Qgd = 3.1 nC;
SMD
SO-8
Si4684DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 12V
Low Qgd
ID=12A; rDS(on)=0.0135Ω
Qgd = 2.8 nC;
SMD
SO-8
Si4686DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Extremely Low Qgd WFET® Technology
Low Qgd
ID=13.8A; rDS(on)=0.014Ω
Qgd = 2.8 nC;
SMD
SO-8
Si7386DP
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=19A; rDS(on)=0.0095Ω
Qgd = 3.0 nC
SMD
PowerPAK SO-8
Si7392DP
N-Ch. Reduced Qg, Fast Switching WFET® Low Qgd
VDS = 30V; VGS = ± 20V
ID=15A; rDS(on)=0.01375Ω
Qgd = 2.6 nC
SMD
PowerPAK SO-8
Si7682DP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
100% Rg Tested
Low Qgd
ID=17.5A; rDS(on)=0.013Ω
Qgd = 3.1 nC;
SMD
PowerPAK SO-8
Si7686DP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Thermal Resistance PowerPAK®
Low Qgd
ID=17.9A; rDS(on)= 0.014Ω
Qgd = 2.8 nC;
SMD
PowerPAK SO-8
N-Ch 30-V (D-S), 175°C, MOSFET;
PWM Optimized;
VDS = 30 V, VGS = ±20 V
ID=63A; rDS(on)=0.013Ω
Qgd = 5 nC
SMD
TO-252
DPAK
SUD50N03-10P
Q-Level
SMD
SO-8
Inductors
Product Name
Status
Description
Features
Package
IHLP4040DZ-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 µH to 10 µH
IDC up to 90 A
SMD
4040
11.5x11.5x4.0mm
IHLP4040DZ-11
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 µH to 100 µH
IDC up to 46 A
SMD
4040
11.5x11.5x4.0mm
IHLP5050CE-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 3.5mm
0.1 µH to 10 µH
IDC up to 84 A
SMD
5050
13.5x13.5x3.5mm
Q-Level
Low-Side MOSFETs
Product Name
Status
Description
Features
Package
Si4336DY
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
SMD
ID=16.3A; rDS(on)=0.0067Ω SO-8
VGSth = 1.0 V;
Si4430BDY
N-Channel 30-V MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=20A; rDS(on)=0.006Ω
VGSth = 1.0 V;
Q-Level
SMD
SO-8
Si4634DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
low rDS(on), high Vast
SMD
ID=16.3A; rDS(on)=0.0067Ω SO-8
VGSth = 1.4 V;
Si4874BDY
NEW
N-Channel 30-V MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=16A; rDS(on)=0.0085Ω
VGSth = 1 V
SMD
SO-8
page 6
Product Name
Status
Description
Features
Package
Si7336 ADP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Ultra Low (ON) Resistance;
Low rDS(on)
ID=30A; rDS(on)=0.0040Ω
VGSth = 1 V
SMD
PowerPAK SO-8
Si7634BDP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on), high Vast
ID=23A; rDS(on)=0.0076Ω
VGSth = 1.5 V
SMD
PowerPAK SO-8
Si7636DP
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Ultra Low (ON) Resistance
Low rDS(on)
ID=28A; rDS(on)=0.0048Ω
VGSth = 1 V
SMD
PowerPAK SO-8
SUD50N03-06 AP
N-Channel 30-V (D-S) MOSFET
Optimized for Low#Side Synch. Rectif.
VDS = 30 V, VGS = ±20 V
Low rDS(on)
ID=30A; rDS(on)=0.0078Ω
VGSth = 1.2 V
SMD
TO-252
DPAK
Q-Level
Resistors
Product Name
Status
Description
Features
Package
WSL2010-18
1 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.001Ω to 0.5Ω
TCR <= ± 75ppm
SMD
2010
5.08x2.54x0.635
WSL2512-18
2 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.0005Ω to 0.04Ω
TCR <= ± 75ppm
SMD
2512
6.36x3.18x0.635
1 Watt Power Metal Strip® Resistors;
Very High Power- Small Size;
Current Sensing;
High power & reliability
R=0.001Ω to 0.05Ω
P70 = 1W
SMD
1206
3.2x1.6x0.635mm
WSLP1206
NEW
Q-Level
Schottky Diodes
Product Name
Status
Description
Features
Package
B140
Schottky Barrier Rectifier; Low Profile;
Guardring for overload protection;
High Surge Capabilities;
VRRM = 40 V;
IF = 1 A, VF = 0.52 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
B240 A
High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
Low Profile
VRRM = 40 V;
IF = 2 A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
B340 A
High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
RoHS-Compliant
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
MSS1P4
Schottky Barrier Rectifiers
SMD; #SMP# Series;
VRRM = 40 V;
IF = 1 A; VF = 0.41 V;
SMD
MicroSMP
2.7x1.4x0.75mm
SS1P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.4 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS2P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.43 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS3P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;#SMP# Series;
Small package
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
Q-Level
Signal Switch
Product Name
Status
2N7002K
Description
N-Ch 60-V (D-S)MOSFET; 2KV ESD
protected
Low On-Resistance; Low Threshold;
Low Input Capacitance; Fast Switch
Features
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
Package
Q-Level
SMD
TO-236 (SOT-23)
Switch Diodes
Product Name
1N4148WS-V
Status
Description
Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
Features
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
Package
Q-Level
SMD
SOD323
page 7
Product Name
Status
Description
Features
RoHS-Compliant;
BAT54 A-V
Small Signal Schottky Diodes;
Single & Dual Schematics;
Very Low Turn-On and Fast Switching
Package
Q-Level
2.85x1.5x1.15mm
Dual, VRRM = 30 V;
IF = 0.2 A, VF = 0.8 V,
SMD
TO-236 (SOT-23)
3.0x2.5x1.1mm
Thin Pack
Thermistor NTC
Product Name
Status
Description
Features
Package
2381 615 1xxx
NTC Thermistors; Surface Mount;
TCR from 6 to 2% even at higher temp.
RoHS-Compliant;
2 kΩ-470
kΩ;B25/85Tol.=1%
RTol.@25°C <= 5 %;
Ptot = 0.21 W
SMD
0805
EIA-Sizes
2381 615 3xxx
NTC Thermistors; Surface Mount;
Tolerance on B25/85 down to 1 %
2.2 kΩ to 100 kΩ; 0.125 W
RTol.@25°C = 5% to 1 %;
SMD
0603
EIA-Sizes
2381 615 4xxx
NTC Thermistors; Surface Mount;
Tolerance on B25/85 down to 1 %
4.7 kΩ to 100 kΩ; 0.125 W
RTol.@25°C = 5% to 1 %;
SMD
0402
EIA-Sizes
2381 615 5xxx
NTC Thermistors; Surface Mount;
Tolerance on B25/85 down to 1 %
2.2 kΩ to 680 kΩ, 0.21 W
RTol.@25°C = 10% to 2 %;
SMD
0805
EIA-Sizes
NTHS
NTC Thermistors; Monolithic Construction
R25 = 1 kΩ to 330 kΩ
Tol.@25°C = 10 % to 1%
B(25/75) = 3181 to 4247
SMD
0402 to 1206
EIA-Sizes
Q-Level
page 8
Notebook : Power Management, System-,DDR-,Chipset-,VGA-Power
Dual MOSFETs
Product Name
Status
Description
Features
Package
Si4830 ADY
Dual N-Ch. 30-V (D-S) MOSFET w.
SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 1.4 V;
SMD
SO-8
Si4834BDY
Dual N-Ch. 30-V (D-S) MOSFET w.
SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8
Si4914DY
Dual N-Ch 30-V (D-S) MOSFET w.
SCHOTTKY
DUAL; With 2 A SCHOTTKY;
ID = 7 A / 7.4 A
SMD
rDS(on)=0.032Ω / 0.027Ω
SO-8
Qgd=1.7 / 2.2nC; VGSth=1V
Si4952DY
Dual N-Channel 25-V (D-S) MOSFET
DUAL
VDS = 25V; VGS = ± 16V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8
Si7844DP
Dual N-Channel 30-V (D-S) MOSFET;
VGS= ± 20V;
TrenchFET® Power MOSFET
High power dissipation;
ID=10 A; rDS(on)= 0.030 Ω
Qgd= 2.7nC; VGSth= 0.8 V;
SMD
PowerPAK SO-8
Q-Level
High-Side MOSFETs
Product Name
Status
Description
Features
Package
Si4386DY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=16A; rDS(on)=0.0095Ω
Qgd = 3.0 nC;
Si4392DY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
SMD
ID=12.5A;rDS(on)=0.01375Ω SO-8
Qgd = 2.6 nC;
SMD
SO-8
Si4682DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
ID=12A; rDS(on)=0.0135Ω
Qgd = 3.1 nC;
SMD
SO-8
Si4684DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 12V
Low Qgd
ID=12A; rDS(on)=0.0135Ω
Qgd = 2.8 nC;
SMD
SO-8
Si4686DY
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Extremely Low Qgd WFET® Technology
Low Qgd
ID=13.8A; rDS(on)=0.014Ω
Qgd = 2.8 nC;
SMD
SO-8
Si4800BDY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8
Si4812BDY
N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8
Si4894BDY
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
ID=12A; rDS(on)=0.016Ω
VGSth = 1 V
SMD
SO-8
Si7112DN
NEW
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 12V
Small package;
low Qgd, low rDS(on)
SMD
ID=17.8A; rDS(on)=0.0082Ω PowerPAK 1212
Qgd= 3.1nC; VGSth= 0.6 V;
Si7230DN
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
Small package
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Small package
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=19A; rDS(on)=0.0095Ω
Qgd = 3.0 nC
SMD
PowerPAK SO-8
Si7326DN
Si7386DP
NEW
Q-Level
page 9
Product Name
Status
Si7392DP
Description
Features
Package
N-Ch. Reduced Qg, Fast Switching WFET® Low Qgd
VDS = 30V; VGS = ± 20V
ID=15A; rDS(on)=0.01375Ω
Qgd = 2.6 nC
SMD
PowerPAK SO-8
Si7682DP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
100% Rg Tested
Low Qgd
ID=17.5A; rDS(on)=0.013Ω
Qgd = 3.1 nC;
SMD
PowerPAK SO-8
Si7686DP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Thermal Resistance PowerPAK®
Low Qgd
ID=17.9A; rDS(on)= 0.014Ω
Qgd = 2.8 nC;
SMD
PowerPAK SO-8
Q-Level
Inductors
Product Name
Status
Description
Features
Package
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Ultra Miniature Power
Profile height ≤ 2 mm;
0.47 µH to 4.7 µH;
IDC up to 12.8 A;
SMD
1616
4.8x4.8x2.0mm
IHLP2525CZ-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Miniature Power
Profile height ≤ 3 mm
0.1 µH to 10 µH
IDC up to 60 A
SMD
2525
7.3x7.3x3.0mm
IHLP4040DZ-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 µH to 10 µH
IDC up to 90 A
SMD
4040
11.5x11.5x4.0mm
IHLP4040DZ-11
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 µH to 100 µH
IDC up to 46 A
SMD
4040
11.5x11.5x4.0mm
IHLP5050CE-01
Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 3.5mm
0.1 µH to 10 µH
IDC up to 84 A
SMD
5050
13.5x13.5x3.5mm
IHLP1616BZ-01
NEW
Q-Level
Low-Side MOSFETs
Product Name
Status
Description
Features
Package
Si4336DY
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
SMD
ID=16.3A; rDS(on)=0.0067Ω SO-8
VGSth = 1.0 V;
Si4386DY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=16A; rDS(on)=0.0095Ω
Qgd = 3.0 nC;
SMD
SO-8
Si4430BDY
N-Channel 30-V MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=20A; rDS(on)=0.006Ω
VGSth = 1.0 V;
SMD
SO-8
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on), high Vast
SMD
ID=16.3A; rDS(on)=0.0067Ω SO-8
VGSth = 1.4 V;
Si4682DY
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=12A; rDS(on)=0.0135Ω
Qgd = 3.1 nC;
SMD
SO-8
Si4686DY
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Extremely Low Qgd WFET® Technology
VGS = ± 20V
ID=13.8A; rDS(on)=0.014Ω
Qgd = 2.8 nC;
SMD
SO-8
Si4800BDY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8
Si4812BDY
N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8
SMD
SO-8
Si4634DY
NEW
Si4874BDY
NEW
N-Channel 30-V MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=16A; rDS(on)=0.0085Ω
VGSth = 1 V
Si7112DN
NEW
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 12V
Small package;
low Qgd, low rDS(on)
SMD
ID=17.8A; rDS(on)=0.0082Ω PowerPAK 1212
Qgd= 3.1nC; VGSth= 0.6 V;
Q-Level
page 10
Product Name
Status
Description
Features
Package
Si7114DN
NEW
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
TrenchFET® Gen II Power MOSFET
Small package
ID=18.3A; rDS(on)=0.010Ω
Qgd= 3.6nC; VGSth= 1 V;
SMD
PowerPAK 1212
Si7230DN
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
Small package
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212
Si7326DN
NEW
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Small package
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212
Si7336 ADP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Ultra Low (ON) Resistance;
Low rDS(on)
ID=30A; rDS(on)=0.0040Ω
VGSth = 1 V
SMD
PowerPAK SO-8
Si7634BDP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on), high Vast
ID=23A; rDS(on)=0.0076Ω
VGSth = 1.5 V
SMD
PowerPAK SO-8
Si7636DP
NEW
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Ultra Low (ON) Resistance
Low rDS(on)
ID=28A; rDS(on)=0.0048Ω
VGSth = 1 V
SMD
PowerPAK SO-8
Q-Level
Resistors
Product Name
Status
Description
Features
Package
WSL2010-18
1 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.001Ω to 0.5Ω
TCR <= ± 75ppm
SMD
2010
5.08x2.54x0.635
WSL2512-18
2 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.0005Ω to 0.04Ω
TCR <= ± 75ppm
SMD
2512
6.36x3.18x0.635
1 Watt Power Metal Strip® Resistors;
Very High Power- Small Size;
Current Sensing;
High power & reliability
R=0.001Ω to 0.05Ω
P70 = 1W
SMD
1206
3.2x1.6x0.635mm
WSLP1206
NEW
Q-Level
Schottky Diodes
Product Name
Status
Description
Features
Package
B140
Schottky Barrier Rectifier; Low Profile;
Guardring for overload protection;
High Surge Capabilities;
VRRM = 40 V;
IF = 1 A, VF = 0.52 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
B240 A
High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
Low Profile
VRRM = 40 V;
IF = 2 A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
B340 A
High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
RoHS-Compliant
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm
MSS1P4
Schottky Barrier Rectifiers
SMD; #SMP# Series;
VRRM = 40 V;
IF = 1 A; VF = 0.41 V;
SMD
MicroSMP
2.7x1.4x0.75mm
SS1P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.4 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS2P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;
#SMP# Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.43 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
SS3P4
NEW
Schottky Barrier Rectifiers; SMD;
High Current Density;#SMP# Series;
Small package
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm
Q-Level
Small-Signal MOSFET
Product Name
2N7002K
Status
Description
N-Ch 60-V (D-S)MOSFET; 2KV ESD
protected
Low On-Resistance; Low Threshold;
Features
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
Package
Q-Level
SMD
TO-236 (SOT-23)
page 11
Product Name
Status
Description
Features
Package
Q-Level
Features
Package
Q-Level
Low Input Capacitance; Fast Switch
Switch Diodes
Product Name
Status
Description
1N4148WS-V
Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
RoHS-Compliant;
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
SMD
SOD323
2.85x1.5x1.15mm
BAT54 A-V
Small Signal Schottky Diodes;
Single & Dual Schematics;
Very Low Turn-On and Fast Switching
Dual, VRRM = 30 V;
IF = 0.2 A, VF = 0.8 V,
SMD
TO-236 (SOT-23)
3.0x2.5x1.1mm
Thin Pack
page 12
Notebook : System Hardware, Load Switch
Level Shift
Product Name
Si1865DL
Status
NEW
Si3865BDV
Description
Features
Package
Load Switch with Level-Shift;
With 2-kV ESD Protection
Low Profile; Small Foodprint
VDS = 8 V;
ID=1.2A; rDS(on)=0.215Ω;
Von/off = 8 V;
SMD
SC-70
Load Switch with Level-Shift;
With 3-kV ESD Protection;1.8 Volt Rated;
VDS = 8V
Lower turn-on at 1.8 V
ID=2.9A; rDS(on)=0.060Ω;
Von/off = 8 V,
SMD
TSOP-6
Q-Level
MOSFETs
Product Name
Status
Description
Features
Package
2N7002K
N-Ch 60-V (D-S)MOSFET; 2KV ESD
protected
Low On-Resistance; Low Threshold;
Low Input Capacitance; Fast Switch
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
Si3424DV
N-Channel 30-V (D-S) MOSFET
TrenchFET® Power MOSFETS
VGS = ± 20V
SMD
ID=6.7A; rDS(on)=0.038Ω;
TSOP-6
Qgd= 11.5nC; VGSth= 0.8V;
Si3433BDC
P-Channel 1.8-V (G-S) MOSFET
TrenchFET® Power MOSFETS
VGS = ± 8V
SMD
ID=5.6A; rDS(on)=0.042Ω;
TSOP-6
Qgd= 12nC; VGSth= 0.45 V;
Si3442BDV
N-Channel 2.5-V (G-S) MOSFET
VDS = 20V; VGS = ± 12V
VGS = ± 12V
ID=4.2A; rDS(on)=0.090Ω;
Qgd= 3.0nC; VGSth= 0.6 V;
SMD
TSOP-6
Si3456BDV
N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=6A; rDS(on)=0.052Ω;
Qgd= 8.6nC; VGSth= 1 V;
SMD
TSOP-6
Si4800BDY
N-Ch. Reduced Qg, Fast Switching
MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8
N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212
P-Channel 60-V (D-S) MOSFET
With 2-kV ESD Protection;
VDS = 60 V, VGS = 20 V,
ID=0.185A; rDS(on)=10Ω
VGSth = 1 V
SMD
SOT-23
Si7326DN
TP0610K
NEW
Q-Level
SMD
TO-236 (SOT-23)
page 13
Notebook : System Hardware, Opto Sensor
Ambient Light Sensor
Product Name
Status
Description
Features
Package
TEMT6000X01
NEW
NPN Phototransistor;
Ambient Light Sensor;
SMD
4.0x2.0x1.05mm
TEMT6200FX01
NEW
NPN Phototransistor;
Ambient Light Sensor;
SMD
0805
EIA-Sizes
Q-Level
page 14
Notebook : System Hardware, Protection
Diodes
Product Name
Status
Description
Features
Package
1N4148WS-V
Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
RoHS-Compliant;
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
SMD
SOD323
2.85x1.5x1.15mm
BAT54 A-V
Small Signal Schottky Diodes;
Single & Dual Schematics;
Very Low Turn-On and Fast Switching
Dual, VRRM = 30 V;
IF = 0.2 A, VF = 0.8 V,
SMD
TO-236 (SOT-23)
3.0x2.5x1.1mm
BAV99-V
Small Signal Switching Diode, Dual
Dual; VRRM = 70 V,
IF = 0.2A; VF = 0.715 V
SMD
SOT-23
Q-Level
Thin Pack
EMI
Product Name
Status
ILHB series
Description
Ferrite [email protected]; High Current;
EIA-Size = 0603/0805/1206/1812
Features
High current
current 2 A to 3 A
DCR = 0.1~0.05 ohms,
Package
Q-Level
SMD
0402 to 1206
EIA-Sizes
Fuse
Product Name
Status
Description
Features
Package
MFU0603
NEW
Fuses, Thin Film; Fast Acting; 0603;
Stable Fusing Characteristics;
IR = 0.5 A to 5.0 A;
UDCmax = 32 V
SMD
0603
EIA-Sizes
MFU0805
NEW
Fuses, Thin Film; Fast Acting; 0805;
Stable Fusing Characteristics;
IR = 0.5 A to 5.0 A;
UDCmax = 32 V
SMD
0805
EIA-Sizes
Q-Level
Thermister NTC
Product Name
Status
Description
Features
Package
2381 615 1xxx
NTC Thermistors; Surface Mount;
TCR from 6 to 2% even at higher temp.
RoHS-Compliant;
2 kΩ-470
kΩ;B25/85Tol.=1%
Rtol.@25°C <= 5 %;
Ptot = 0.21 W
SMD
0805
EIA-Sizes
2381 615 3xxx
NTC Thermistors; Surface Mount;
Tolerance on B25/85 down to 1 %
2.2 kΩ to 100 kΩ; 0.125 W
RTol.@25°C = 5% to 1 %;
SMD
0603
EIA-Sizes
2381 615 4xxx
NTC Thermistors; Surface Mount;
Tolerance on B25/85 down to 1 %
4.7 kΩ to 100 kΩ; 0.125 W
RTol.@25°C = 5% to 1 %;
SMD
0402
EIA-Sizes
2381 615 5xxx
NTC Thermistors; Surface Mount;
Tolerance on B25/85 down to 1 %
2.2 kΩ to 680 kΩ, 0.21 W
RTol.@25°C = 10% to 2 %;
SMD
0805
EIA-Sizes
NTHS
NTC Thermistors; Monolithic Construction
R25 = 1 kΩ to 330 kΩ
Tol.@25°C = 10 % to 1%
B(25/75) = 3181 to 4247
SMD
0402 to 1206
EIA-Sizes
Q-Level
Thermister PTC
Product Name
Status
TFPT
Description
PTC Thermistors; Linear; Thin Film;
SMD; EIA 0603/0805/1206;
Features
[email protected]°C= 4110ppm
TCR Tol.=±400ppm
Package
Q-Level
SMD
0603 to 1206
EIA-Size
TVS
Product Name
TPSMP series
Status
Description
Transient Voltage Suppressor
High Power Density; SMD;
Automotive Qualified
Features
Small package
400 W, up to 30 A,
VF = 2.5 V,
Package
SMD
SMP
4x2.18x1.15mm
Q-Level
AEC Q-101
page 15
Zener
Product Name
BZX384 series
Status
Description
Silicon Planar Power Zener Diodes;
Miniature;
Features
0.2 Watt
Zvoltage Tol. ≤ 5%
Package
Q-Level
SMD
SOD323
2.85x1.5x1.15mm
page 16
page 17