HMC863


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
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HMC863
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HMC863
v00.1109
Amplifiers - Linear & Power - Chip
3
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Typical Applications
Features
The HMC863 is ideal for:
Saturated Output Power: +28 dBm @ 18% PAE
• Point-to-Point Radios
High Output IP3: +39 dBm
• Point-to-Multi-Point Radios
High Gain: 27 dB
• VSAT
DC Supply: +6V @ 375mA
• Military & Space
50 Ohm Matched Input/Output
Die Size: 2.41 x 0.95 x 0.1 mm
Functional Diagram
General Description
The HMC863 is a three stage GaAs pHEMT MMIC
1/2 Watt Power Amplifier which operates between
24 and 29.5 GHz. The HMC863 provides 27 dB of
gain, and +27 dBm of saturated output power at 18%
PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration
into Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test fixture connected via 0.025
mm (1 mil) diameter wire bonds of length 0.31 mm
(12 mils).
Electrical Specifications, TA = +25° C, Vdd = +6V, Idd = 375mA[1]
Parameter
Min.
Frequency Range
Max.
Min.
24 - 27
Gain
24
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
27
Saturated Output Power (Psat)
(IP3)[2]
Total Supply Current (Idd)
24
Typ.
27 - 29.5
22
Max.
Units
GHz
25
dB
0.0375
0.05
dB/ °C
17
11
dB
15
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept
Typ.
11
dB
26
dBm
27
dBm
37
38
dBm
375
375
mA
27
28
23
[1] Adjust Vgg between -2 to 0V to achieve Idd= 375mA typical.
[2] Measurement taken at +6V @ 375mA, Pout / Tone = +16 dBm
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
30
34
32
0
-10
28
26
24
22
-20
+25C
+85C
-55C
20
-30
18
21
22
23
24
25
26
27
28
29
30
24
25
FREQUENCY (GHz)
28
29
30
Output Return Loss vs. Temperature
0
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
27
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
-20
-25
-10
-15
-20
+25C
+85C
-55C
-25
-30
-30
24
25
26
27
28
29
30
24
25
FREQUENCY (GHz)
27
28
29
30
29
30
P1dB vs. Supply Voltage
31
29
29
P1dB (dBm)
31
27
25
+25C
+85C
-55C
23
26
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
26
27
25
6.0V
5.5V
5.0V
23
21
Amplifiers - Linear & Power - Chip
3
30
S21
S11
S22
10
GAIN (dB)
RESPONSE (dB)
20
21
24
25
26
27
28
FREQUENCY (GHz)
29
30
24
25
26
27
28
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-2
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Psat vs. Supply Voltage
31
29
29
Psat (dBm)
31
27
25
+25C
+85C
-55C
23
25
6.0V
5.5V
5.0V
21
24
25
26
27
28
29
30
24
25
FREQUENCY (GHz)
31
29
29
Psat (dBm)
P1dB (dBm)
27
28
29
30
29
30
Psat vs. Supply Current (Idd)
31
27
25
350mA
375mA
400mA
23
26
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
27
25
350mA
375mA
400mA
23
21
21
24
25
26
27
28
29
30
24
25
FREQUENCY (GHz)
26
27
28
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +16 dBm
Output IP3 vs.
Supply Current, Pout/Tone = +16 dBm
46
42
42
IP3 (dBm)
46
38
+25C
+85C
-55C
34
38
350mA
375mA
400mA
34
30
30
24
25
26
27
28
FREQUENCY (GHz)
3-3
27
23
21
IP3 (dBm)
Amplifiers - Linear & Power - Chip
3
Psat (dBm)
Psat vs. Temperature
29
30
24
25
26
27
28
29
30
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +16 dBm
Output IM3 @ Vdd = +5V
46
60
50
IM3 (dBc)
IP3 (dBm)
40
38
24 GHz
26 GHz
28 GHz
29 GHz
20
6.0V
5.5V
5.0V
34
30
10
30
0
23
24
25
26
27
28
29
9
30
11
13
15
60
50
50
40
40
24 GHz
26 GHz
28 GHz
29 GHz
20
30
21
23
19
21
23
24 GHz
26 GHz
28 GHz
29 GHz
20
10
10
0
0
9
11
13
15
17
19
21
23
9
11
13
15
Pout/TONE (dBm)
17
Pout/TONE (dBm)
Reverse Isolation vs. Temperature
Output Power, Gain & PAE @ 27 GHz
35
0
30
REVERSE ISOLATION (dB)
Pout (dBm), GAIN (dB), PAE (%)
19
Output IM3 @ Vdd = +6V
60
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +5.5V
30
17
Pout/TONE (dBm)
FREQUENCY (GHz)
25
20
15
10
Pout
Gain
PAE
5
0
Amplifiers - Linear & Power - Chip
3
42
-10
+25C
+85C
-55C
-20
-30
-40
-50
-60
-16
-12
-8
-4
INPUT POWER (dBm)
0
4
24
25
26
27
28
29
30
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-4
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Gain & Power vs.
Supply Current @ 27 GHz
Gain & Power vs.
Supply Voltage @ 27 GHz
Gain (dB), P1dB (dBm), Psat (dBm)
30
Gain (dB)
P1dB (dBm)
Psat (dBm)
29
28
27
26
25
350
Gain (dB)
P1dB (dBm)
Psat (dBm)
29
28
27
26
25
360
370
380
390
5
400
5.2
5.4
5.6
5.8
6
Vdd (V)
Idd (mA)
Power Dissipation
3
POWER DISSIPATION (W)
Amplifiers - Linear & Power - Chip
3
Gain (dB), P1dB (dBm), Psat (dBm)
30
2.5
2
24 GHz
25 GHz
26 GHz
27 GHz
28 GHz
1.5
1
-18
-15
-12
-9
-6
-3
0
3
6
INPUT POWER (dBm)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+6.5V
Vdd (V)
Idd (mA)
RF Input Power (RFIN)
+26 dBm
+5.0
375
Channel Temperature
150 °C
+5.5
375
+6.0
375
Continuous Pdiss (T= 85 °C)
(derate 37.2 mW/°C above 85 °C)
2.42W
Thermal Resistance
(channel to die bottom)
26.9 °C/W
Storage Temperature
-65 to 150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 375mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
Vgg
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass caps 100pF, 0.1 µF and
4.7 µF are required.
3
Vdd
Drain bias for amplifier. External bypass caps
100pF, 0.1 µF and 4.7uF are required
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Linear & Power - Chip
3
3-6
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Assembly Diagram
Amplifiers - Linear & Power - Chip
3
3-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863
v00.1109
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
3
Amplifiers - Linear & Power - Chip
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-8