HMC1049


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
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
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supply formats:
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storage systems for secure long
term product support
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[email protected]
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HMC1049
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HMC1049
v00.0512
Amplifiers - CHIP
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Typical Applications
Features
This HMC1049 is ideal for:
Low Noise Figure: 1.7 dB
• Point-to-Point Radios
High Gain: 16 dB
• Point-to-Multi-Point Radios
P1dB Output Power: 15 dBm
• Military & Space
Supply Voltage: +7 V @ 70 mA
• Test Instrumentation
Output IP3: 27 dBm
50 Ohm matched Input/Output
Die Size: 1.43 x 2.9 x 0.1 mm
General Description
Functional Diagram
The HMC1049 is a GaAs MMIC Low Noise Amplifier
which operates between 0.3 and 20 GHz. This LNA
provides 16 dB of small signal gain, 1.7 dB noise figure,
and output IP3 of 27 dBm, while requiring only 70 mA
from a +7 V supply. The P1dB output power of 16 dBm
enables the LNA to function as a LO driver for balanced,
I/Q or image reject mixers. Vdd can be applied to pad
2 or pad 4. Pad 4 will require a bias tee. The HMC1049
also is internally matched to 50 Ohms for ease
of integration into multi-chip-modules (MCMs). All
data is taken with the chip in a 50 Ohm test fixture
connected via 0.025 mm (1 mil) diameter wire bonds
of 0.31 mm (12 mils) length.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 70 mA [1]
Parameter
Min.
Frequency Range
Gain
Gain Variation over Temperature
Noise Figure
Typ.
Max.
Min.
0.3 - 10
12.5
16
12
0.012
1.7
Typ.
Max.
Min.
10 - 16
14.5
11
0.016
2.4
2
Typ.
Max.
16 - 20
2.7
Units
GHz
13
dB
0.015
dB / °C
2.7
3.6
dB
Input Return Loss
17
14
14
Output Return Loss
12
17
17
dB
dB
Output Power for 1 dB Compression
15
13
12
dBm
Saturated Output Power (Psat)
18
16.5
15.5
dBm
Output Third Order Intercept (IP3)
27
25
23.5
dBm
Supply Current (Idd)
(Vdd = 7V)
70
70
70
mA
[1] Adjust Vgg to achieve Idd= 70 mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Data taken with Vdd applied to pad 2.
20
15
18
+25 C
+85 C
-55 C
16
5
S21
S11
S22
-5
GAIN (dB)
RESPONSE (dB)
25
-15
14
12
10
-25
8
-35
6
0
4
8
12
16
20
24
0
2
4
6
FREQUENCY (GHz)
0
12
14
16
18
20
22
0
-5
+25 C
+85 C
-55 C
-5
+25 C
+85 C
-55 C
RETURN LOSS (dB)
RETURN LOSS (dB)
10
Output Return Loss vs. Temperature
Input Return Loss vs. Temperature
-10
-15
-20
-25
-10
-15
-20
-25
-30
-30
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
16
18
20
22
FREQUENCY (GHz)
Noise Figure vs. Temperature
Noise Figure vs. Vdd
6
6
+25 C
+85 C
-55 C
+6V
+7V
+8V
5
NOISE FIGURE (dB)
5
NOISE FIGURE (dB)
8
FREQUENCY (GHz)
Amplifiers - CHIP
Gain vs. Temperature
Broadband Gain & Return Loss [1]
4
3
2
1
4
3
2
1
0
0
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Data taken with Vdd applied to pad 2.
Output IP3 vs. Temperature
Noise Figure vs. Idd
35
60 mA
70 mA
80 mA
5
+25 C
+85 C
-55 C
30
4
IP3 (dBm)
NOISE FIGURE (dB)
Amplifiers - CHIP
6
3
25
20
2
15
1
10
0
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
P1dB vs. Temperature
+25 C
+85 C
-55 C
14
16
18
20
+25 C
+85 C
-55 C
20
Psat (dBm)
P1dB (dBm)
12
23
17
14
11
8
17
14
11
5
8
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
18
20
FREQUENCY (GHz)
P1dB vs. Vdd
Psat vs. Vdd
20
23
+6V
+7V
+8V
+6V
+7V
+8V
20
Psat (dBm)
17
P1dB (dBm)
10
Psat vs. Temperature
20
14
11
8
17
14
11
5
8
0
2
4
6
8
10
12
FREQUENCY (GHz)
3
8
FREQUENCY (GHz)
FREQUENCY (GHz)
14
16
18
20
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Data taken with Vdd applied to pad 2.
Reverse Isolation vs. Temperature
Power Compression @ 2 GHz
+25 C
+85 C
-55 C
-10
ISOLATION (dB)
Pout (dBm), GAIN (dB), PAE (%)
-5
-15
-20
-25
-30
-35
-40
0
2
4
6
8
10
12
14
16
18
20
16
Gain
Pout
PAE
12
8
4
0
-15
22
-12
-9
FREQUENCY (GHz)
Power Compression @ 10 GHz
0
3
6
3
6
20
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
-3
Power Compression @ 18 GHz
20
16
Gain
Pout
PAE
12
8
4
0
-15
-12
-9
-6
-3
0
3
16
12
Gain
Pout
PAE
8
4
0
-15
6
-12
-9
-6
-3
0
INPUT POWER (dBm)
INPUT POWER (dBm)
Noise Figure, Gain & Power vs.
Supply Current @ 12 GHz
Noise Figure, Gain & Power vs.
Supply Voltage @ 12 GHz
18
Noise Fig. (dB), Gain (dB), Psat (dBm)
21
Noise Fig. (dB), Gain (dB), Psat (dBm)
-6
INPUT POWER (dBm)
Amplifiers - CHIP
20
0
18
15
12
NOISE FIG (dB)
GAIN (dB)
Psat (dBm)
9
6
3
0
15
12
NOISE FIG (dB)
GAIN (dB)
Psat (dBm)
9
6
3
0
6
6.5
7
Vdd (V)
7.5
8
50
60
70
80
Idd (mA)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Data taken with Vdd applied to bias tee at pad 4.
Gain vs. Temperature [1]
25
20
15
18
+25 C
+85 C
-55 C
16
5
S21
S11
S22
-5
GAIN (dB)
RESPONSE (dB)
Amplifiers - CHIP
Broadband Gain & Return Loss [1]
-15
14
12
10
-25
8
-35
6
0
4
8
12
16
20
24
0
2
4
6
8
FREQUENCY (GHz)
14
16
18
20
22
35
6
+25 C
+85 C
-55 C
5
+25 C
+85 C
-55 C
30
4
IP3 (dBm)
NOISE FIGURE (dB)
12
Output IP3 vs. Temperature [1]
Noise Figure vs. Temperature [1]
3
25
20
2
15
1
10
0
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
8
10
12
14
16
18
20
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature [1]
P1dB vs. Temperature [1]
20
23
+25 C
+85 C
-55 C
20
Psat (dBm)
17
P1dB (dBm)
10
FREQUENCY (GHz)
14
11
8
17
+25 C
+85 C
-55 C
14
11
5
8
0
2
4
6
8
10
12
FREQUENCY (GHz)
14
16
18
20
0
2
4
6
8
10
12
FREQUENCY (GHz)
[1] Vdd= 4V, supply to bias tee.
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Drain Bias Voltage (Vdd)
+10V
Drain Bias Voltage (RF out / Vdd)
+7V
RF Input Power
+18 dBm
Gate Bias Voltage, Vgg1
-2V to +0.2V
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 37.4 mW/°C above 85 °C)
3.4 W
Thermal Resistance
(Channel to die bottom)
26.7 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-1(Gel Pack)
[2]
Amplifiers - CHIP
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Amplifiers - CHIP
Pad Descriptions
7
Pad Number
Function
Description
1
RFIN
This pin is DC coupled
and matched to 50 Ohms
2
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required.
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
4
RFOUT
This pin is DC coupled
and matched to 50 Ohms
5, 6
ACG2, ACG3
Low frequency termination. Attach bypass capacitor per
application circuit herein.
7
Vgg
Gate control for amplifier. Adjust to achieve Idd= 70 mA.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Amplifiers - CHIP
Application Circuit
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Amplifiers - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm)
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1049
v00.0512
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Amplifiers - CHIP
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10