AS8S512K32

SRAM
AS8S512K32
& AS8S512K32A
512K x 32 SRAM
OPTIONS
SRAM MEMORY ARRAY
Operating Temp. Ranges
Full Military (-55oC to +125oC)
Military (-55oC to +125oC)
Industrial (-40oC to +85oC)
Markings
Q & 883
XT
IT
Timing
12ns
15ns
17ns
20ns
Timing
25ns
35ns
45ns
55ns
AVAILABLE AS MILITARY SPECIFICATIONS
•
•
SMD 5962-94611 & 5962-95624 (Military Pinout)
MIL-STD-883
FEATURES
• Operation with single 5V
• Built in decoupling caps for
supply
low noise
• Vastly improved Icc Specs
• Organized as 512Kx32 , byte
• High speed: 12, 15, 17, 20, 25,
selectable
35, 45 & 55ns
• TTL Compatible Inputs and
• Low power CMOS
Outputs
GENERAL DESCRIPTION
The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS
SRAM Modules organized as 512Kx32 bits. These devices achieve
high speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
This military temperature grade product is ideally suited for
military applications.
Markings
-12
-15
-17
-20
Markings
-25
-35
-45
-55
Package
Ceramic Quad Flatpack
Pin Grid Array
Markings
Q, Q1, Q2, BQFP
P
Low Power Data
Retention Mode
L
Pinout
Military
Commercial
Markings
(no indicator)
A*
*(available with Q package only)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O 14
I/O 13
I/O 12
Vss
I/O 11
I/O 10
I/O 9
I/O 8
Vcc
I/O 7
I/O 6
I/O 5
I/O 4
Vss
I/O 3
I/O 2
I/O 1
68 Lead CQFP
Commercial
Pinout Option
(Q with
Pinout A)
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
66 Lead
PGA (P)
Military SMD
Pinout
Vcc
A11
A12
A13
A14
A15
A16
CS2\
OE\
CS4\
A17
A18
NC
NC
NC
NC
NC
68 Lead
CQFP
(BQFP)
Military SMD
Pinout Option
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
NC
A0
A1
A2
A3
A4
A5
CS1\
GND
CS3\
WE\
A6
A7
A8
A9
A10
Vcc
I/O 31
A6
A5
A4
A3
A2
A1
A0
Vcc
A13
A12
A11
A10
A9
A8
A7
I/O 0
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
Vcc
A11
A12
A13
A14
A15
A16
CS1\
OE\
CS2\
A17
WE2\
WE3\
WE4\
A18
NC
NC
68 Lead CQFP
(Q, Q1, Q2)
Military SMD
Pinout Option
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
NC
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
I/O 16
A18
A17
CS4\
CS3\
CS2\
CS1\
NC
Vcc
NC
NC
OE\
WE\
A16
A15
A14
I/O 15
PIN ASSIGNMENT
(Top View)
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
1
SRAM
SRAM
Austin Semiconductor, Inc.
AS8S512K32
AS8S512K32
&&AS8S512K32A
AS8S512K32A
CS\4
CS4\
CS3\
CS\3
M2
CS\2
CS2\
M1
CS\1
CS1\
WE\
OE\
A0 - A18
MILITARY
PINOUT/BLOCK
DIAGRAM
MILITARY
PINOUT/BLOCK
DIAGRAM
TRUTH TABLE
MODE
Read
Write(2)
Standby
OE\
L
CE\CS WE\
CS
L
H
I/O
DOUT
POWER
ACTIVE
X
L
L
DIN
ACTIVE
X
H
X
High Z
STANDBY
AS8S512K32 & AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
Rev. 6.9 08/13
M0
512K x 8
CS
512K x 8
CS
512K x 8
M3
CS
512K x 8
CS
I/O 24 - I/O 31
I/O 16 - I/O 23
I/O 8 - I/O 15
I/O 0 - I/O 7
COMMERCIAL
PINOUT/BLOCK
DIAGRAM
COMMERCIAL
PINOUT/BLOCK
DIAGRAM
2 2
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Micross Components reserves the right to change products or specifications without notice.
SRAM
SRAM
AS8S512K32
AS8S512K32
& AS8S512K32A
AS8S512K32A
&
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM
MAXIMUM RATINGS*
RATINGS*
ABSOLUTE
Voltage of Vcc Supply Relative to Vss.................-.5V to +7V
VoltageofVccSupplyRelativetoVss......................-.5Vto+7V
Storage Temperature.....................................-65°C to +150°C
StorageTemperature............................................-65°Cto+150°C
Short Circuit Output Current(per I/O)............................20mA
ShortCircuitOutputCurrent(perI/O).................................20mA
Voltage on Any Pin Relative to Vss................-.5V to Vcc+1V
VoltageonAnyPinRelativetoVss....................-.5VtoVcc+1V
Maximum Junction Temperature**.............................+150°C
MaximumJunctionTemperature**...................................+150°C
*Stressesgreater
greaterthan
thanthose
thoselisted
listedunder
under“Absolute
“AbsoluteMaximum
Maximum
*Stresses
Ratings”
may
cause
permanent
damage
to
the
device.
Ratings” may cause permanent damage to the device.
This isis aa stress
stress rating
rating only
only and
and functional
functional operation
operation on
on the
the
This
device
at
these
or
any
other
conditions
above
those
indicated
device at these or any other conditions above those indicated
inthe
theoperational
operationalsections
sectionsof
ofthis
thisspecification
specificationisisnot
notimplied.
implied. in
Exposure
to
absolute
maximum
rating
conditions
for
extended
Exposure to absolute maximum rating conditions for extended
periodsmay
mayaffect
affectreliability.
reliability.
periods
**Junction
temperature
depends
upon
package
cycle
**Junction temperature depends
upon
package
type, type,
cycle time,
time,
loading,
ambient
temperature
and
airflow. See
the
Aploading, ambient temperature and airflow. See the Application
plication
Information
section
at
the
end
of
this
datasheet
for
Informationsectionattheendofthisdatasheetformoreinformore
information.
mation.
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS AND
AND RECOMMENDED
ELECTRICAL
RECOMMENDED DC
DC OPERATING
OPERATINGCONDITIONS
CONDITIONS
o
o
o
o
(-55
o C < T < 125o C and -40
o C to +85
o C; Vcc = 5V +10%)
(-55 C < TAA < 125 C and -40 C to +85 C; Vcc = 5V +10%)
DESCRIPTION
Input High (logic 1) Voltage
CONDITIONS
SYMBOL
VIH
MIN
2.2
VIL
-0.5
0.8
ILI1
-10
10
V
µA
ILI2
-10
10
µA
Output(s) Disabled
0V<VOUT<VCC
ILO
-10
10
µA
Output High Voltage
IOH = 4.0mA
VOH
2.4
Output Low Voltage
IOL = 8.0mA
VOL
Input Low (logic 1) Voltage
Input Leakage Current ADD,OE
0V<VIN<VCC
Input Leakage Current WE, CE
Output Leakage Current I/O
VCC
Supply Voltage
DESCRIPTION
DESCRIPTION
CONDITIONS
CONDITIONS
Icc
Icc
CS\>VIH; VCC = MAX
PowerSupply
Supply CS\>VIH; VCC = MAX
Power
f==MAX
MAX==1/1/tRC
tRC(MIN)
(MIN)
f
Current:Standby
Standby
Current:
OutputsOpen
Open
Outputs
AS8S512K32 & AS8S512K32A
AS8S512K32
& AS8S512K32A
Rev. 6.9 08/13
Rev. 6.0 6/05
VIN==VCC
VCC- -0.2V,
0.2V,oror
VIN
VSS
+0.2V
VSS +0.2V
VCC=Max;f f==0Hz
0Hz
VCC=Max;
1,2
V
1
0.4
V
1
5.5
V
1
MAX
MAX
SYMBOL
-12
-15
-17
-20
-25 -35
-35 -45
-45 -55
-55 UNITS
UNITSNOTES
NOTES
SYMBOL -12 -15 -17 -20 -25
CS\<VIL;VCC
VCC==MAX
MAX
CS\<VIL;
PowerSupply
Supply
Power
f
=
MAX
=
1/
tRC
(MIN)
Current:Operating
Operating f = MAX = 1/ tRC (MIN)
Current:
OutputsOpen
Open
Outputs
CMOSStandby
Standby
CMOS
4.5
MAX UNITS NOTES
VCC+.5
V
1
250 200
200 700
175 650
150 600
140 570
130 570
120 550
110 mA
mA
250
3,13
3,13
ISBT1
ISBT1
40
80
40 240
40 240
35 190
35 190
30 150
30 150
30 mA
mA
80
3, 3,
1313
ISBT2
ISBT2
20
80
20
8020 80
3
3
20
80
20
80
20
8020 80
mA
8020 mA
Micross Components reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
CADD
SYMBOL
PARAMETER
A0 - A18 Capacitance
MAX
50
SRAM
UNITS
AS8S512K32
pF
& AS8S512K32A
COE
OE\ Capacitance
50
CWE, CCS
WE\ and CS\ Capacitance
20
pF
20
pF
CIO
I/O f31
CAPACITANCE
(VI/O
=0-0V,
= Capacitance
1MHz, TA = 25oC)1
IN
version)
CWE ("A"
SYMBOL
WE\ Capacitance
PARAMETER
CADD
A0 - A18 Capacitance
NOTE:
COE
OE\ Capacitance
1. This parameter is sampled.
CWE, CCS
WE\ and CS\ Capacitance
CIO
I/O 0- I/O 31 Capacitance
CWE ("A" version)
WE\ Capacitance
pF
50
MAX
50
pF
UNITS
pF
50
pF
20
pF
20
pF
50
pF
NOTE:
1. This parameter is sampled.
AC TEST CONDITIONS
Test Specifications
Inputpulselevels.........................................VSS to 3V
Inputriseandfalltimes.........................................5ns
Inputtimingreferencelevels...............................1.5V
AC TEST
CONDITIONS
Output reference
levels........................................1.5V
Output load..............................................See Figure 1
Test Specifications
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
IOL
Current Source
Device
Under
Test
-
+
Vz = 1.5V
(Bipolar
Supply)
+
Ceff = 50pf
IOH
Current Source
NOTES:
Vzisprogrammablefrom-2Vto+7V.
IOLandIOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOLandIOH are adjusted to simulate a typical resistive load
circuit.
NOTES:
Vz is programmable from -2V to + 7V.
AS8S512K32
IOL and&IAS8S512K32A
programmable from 0 to 16 mA.
OH
Rev. 6.0 6/05
Vz is typically the midpoint of VOH and VOL.
4
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Figure 1
Figure 1
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Micross Components reserves the right to change products or specifications without notice.
4
SRAM
AS8S512K32
& AS8S512K32A
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip select access time
Output hold from address change
Chip select to output in Low-Z
Chip select to output in High-Z
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip select to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-z
Write enable to output in High-Z
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
SYMBOL
t
RC
AA
t
ACS
t
OH
t
LZCS
t
HZCS
t
AOE
t
LZOE
t
HZOE
-12
-15
-17
-20
-25
-35
-45
-55
UNITS NOTES
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
12
t
t
WC
CW
AW
t
AS
t
AH
t
WP1
t
WP2
t
DS
t
DH
t
LZWE
t
HZWE
t
t
15
12
12
2
2
2
2
7
7
0
2
2
0
25
20
20
2
2
9
9
0
9
15
12
12
2
1
12
12
10
0
2
8
20
17
17
8
8
7
12
10
10
2
1
10
10
8
0
2
7
17
15
15
2
2
10
10
0
12
17
15
15
2
1
15
15
12
0
2
2
2
0
2
2
0
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
0
20
20
0
20
45
25
25
2
1
25
25
20
0
2
15
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
20
20
15
35
20
20
2
1
20
20
15
0
2
13
55
45
45
15
15
12
25
17
17
2
1
17
17
12
0
2
11
45
35
35
12
12
12
20
15
15
2
1
15
15
10
0
2
9
35
25
25
55
25
25
2
1
25
25
20
0
2
15
4,6,7
4,6,7
4,6
4,6
4,6,7
4,6,7
Micross Components reserves the right to change products or specifications without notice.
5
SRAM
AS8S512K32
& AS8S512K32A
READ CYCLE NO. 1
tRC
ADDRESS
tOH
DATA I/O
tAA
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2
tRC
ADDRESS
CS\
OE\
DATA I/O
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
tAA
t
tLZCS ACS
tAOE
tLZOE
HIGH IMPEDANCE
tHZCS
tHZOE
DATA VALID
Micross Components reserves the right to change products or specifications without notice.
6
SRAM
AS8S512K32
& AS8S512K32A
WRITE CYCLE NO. 1
(Chip Select Controlled)
tWC
ADDRESS
tAW
CS\
tAS
WE\
tAH
tCW
tWP11
tHZWE
tDS
DATA I/O
tLZWE
tDH
DATA VALID
WRITE CYCLE NO. 2
(Write Enable Controlled)
tWC
ADDRESS
CS\
WE\
tAS
tAW
tWP21
tDS
DATA I/O
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
tAH
tCW
tDH
DATA VALID
Micross Components reserves the right to change products or specifications without notice.
7
SRAM
AS8S512K32
& AS8S512K32A
NOTES
1. All voltages referenced to VSS (GND).
2. -2V for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
1
HZ.
unloaded, and f= t
RC(MIN)
tHZCS, is less than tLZCS, and tHZWE is less than tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip selects and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. tRC= READ cycle time.
4. This parameter guaranteed but not tested.
12. Chip enable (CS\) and write enable (WE\) can initiate
5. Test conditions as specified with output loading as
and terminate a WRITE cycle.
shown in Fig. 1 unless otherwise noted.
6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. 13. ICC is for 32 bit mode.
Transition is measured +/- 200 mV typical from steady state
voltage, allowing for actual tester RC time constant.
7. At any given temperature and voltage condition,
LOW POWER CHARACTERISTICS (L Version Only)
DESCRIPTION
VCC for Retention Data
Data Retention Current
Chip Deselect to Data
Retention Time
CONDITIONS
All Inputs @ Vcc + 0.2V
or Vss + 0.2V,
CS\ = Vcc + 0.2V
SYMBOL
VDR
MIN
2
MAX
UNITS
V
VCC = 2V
ICCDR
10
mA
VCC = 3V
ICCDR
12
mA
NOTES
tCDR
0
ns
4
tR
tRC
ns
4, 11
Operation Recovery Time
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR>2V
CDR
R
t
t
VDR
CS\ 1-4
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
8
SRAM
AS8S512K32
SRAM
& AS8S512K32
AS8S512K32A
& AS8S512K32A
Austin
Semiconductor,
Inc.
MECHANICAL
DEFINITIONS*
MECHANICAL DEFINITIONS*
Micross Case #702 (Package Designator Q)
SMD#702
5962-94611,
Outline Q)
M
ASI Case
(PackageCase
Designator
SMD 5962-94611, Case Outline M
4 x D2
4xD2
4 x D1
D
DETAIL A
DETAILA
4xD1
D
R
1Ro - 7o
b
B
L1
B
1 - 7
o
b
e
o
SEE DETAIL A
e
L1
A1
SEEDETAILA
A
A1
A2
E
A
A2
E
SYMBOL
A
A1
A2
B
b
D
D1
D2
E
e
R
L1
MIN
0.123
0.118
0.000
SMD SPECIFICATIONS
0.010 REF
0.013
0.800 BSC
0.870
0.980
0.936
0.050 BSC
0.005
0.035
MAX
0.200
0.186
0.020
0.017
0.890
1.000
0.956
--0.045
*All measurements are in inches.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
9
*All measurements are in inches.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Package Designator Q2
D2
D1
D
1
b
D3
e
PACKAGE SPECIFICATION
PACKAGE
Symbol
MinSPECIFICATION
Max
Symbol
Max
Min
A
.200
A
.200
A1
.070
.080
A1
.070
.080
B
.013
.017
.013
.017
.010 REF
b b
.010 REF
.800 BSC
D B
D1 D
.870
.890BSC
.800
D2D1
.980 .870 1.00
.890
.050 BSC
e D2
1.010
1.030
.010 TYP
R D3
.975
.995
L1 e
.035
.045
.050 BSC
Dimensions are in inches.
.010 TYP
R
.050
L1
.065
A
R
L1
B
A1
Dimensions in inches
*All measurements are in inches.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
10
SRAM
SRAM
AS8S512K32
AS8S512K32
& AS8S512K32A
& AS8S512K32A
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
MECHANICAL DEFINITIONS*
Micross Case #904 (Package Designator P )
ASI Case
#904 (Package
Designator
SMD 5962-94611,
Case
Outline TP )
SMD 5962-94611, Case Outline T
4xD
D1
4xD
D2
D1
Pin 56
A
A
D2
Pin56
A1
A1
Pin 1
φb1
(identified by
0.060 square pad)
Pin1
φb1
(identified by
0.060 square pad)
E1
E1
e
e
φb
e
Pin 66
Pin66
e
SYMBOL
A
A1
φb
φb1
D
D1/E1
D2
e
L
φb
Pin 11
L
Pin11
MIN
0.144
0.025
0.016
0.045
1.065
L
SMD SPECIFICATIONS
1.000 TYP
0.600 TYP
0.100 TYP
0.145
MAX
0.181
0.035
0.020
0.055
1.085
0.155
*All measurements are in inches.
AS8S512K32
& AS8S512K32A
*All
measurements
are in inches.
Rev. 6.9 08/13
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
Micross Components reserves the right to change products or specifications without notice.
11
11
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Case (Package Designator Q1)
SMD 5962-94611, Case Outline A
SYMBOL
A
A1
b
B
c
D/E
D1/E1
D2/E2
e
L
R
SMD SPECIFICATIONS
MIN
MAX
--0.200
0.054
--0.013
0.017
0.010 TYP
0.009
0.012
0.980
1.000
0.870
0.890
0.800 BSC
0.050 BSC
0.035
0.045
0.010 TYP
*All measurements are in inches.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
12
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Case outline N.
Micross Case (Package
Designator BQFP)
SMD 5962-95624, Case Outline N
Case outline N - Continued.
Symbol
Millimeters
Inches
Min
Max
Min
Max
A
2.92
5.10
.115
.200
A1
1.40
1.65
.055
.065
A2
1.14
1.40
.045
.055
b
0.30
0.46
.012
.018
C
0.23
0.31
.009
.012
D/E
63.63
66.42
2.505
2.615
D1/E1
39.24
40.01
1.545
1.575
D2/E2
71.25
84.20
2.805
3.315
e
1.14
1.40
.045
.055
e1
20.19
20.45
.795
j
FIGURE
1. Case
outline(s).
4.83
5.33
.190
k
37.72
38.48
1.485
L
12.19
13.21
.480
STANDARD
MICROCIRCUIT DRAWING
9.45
9.86
S1
AS8S512K32 & AS8S512K32A
DEFENSE
Rev. 6.9 08/13
SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO
43218-3990
NOTES:
DSCC FORM 2234
SIZE
.372
A
.805
.210
1.515
.520
.388
REVISION LEVEL
C
5962-95624
SHEET
Micross Components reserves the right to change products or specifications without notice.
13
1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
2. Pin numbers are for reference only.
11
SRAM
AS8S512K32
& AS8S512K32A
ORDERING INFORMATION
Device Number
Package Type
Speed (ns)
AS8S512K32
Q, Q1, Q2, P or BQFP
‐12, ‐15, ‐17, ‐20, ‐25, ‐35, ‐45 or ‐55
Examples:
Power Option
L (Low Power)
Blank (Std power)
/*
*Available Processes
0
0
AS8S512K32Q‐15/Q
IT = Industrial Temperature Range
‐40 C to +85 C
AS8S512K32P‐17L/Q
XT = Military Temperature Range
0
0
‐55 C to +125 C
AS8S512K32P‐25/XT
AS8S512K32Q1‐55/IT
AS8S512K32BQFP‐55/883C
Q & 883C = Full Military Processing
0
0
‐55 C to +125 C
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Process
Micross Components reserves the right to change products or specifications without notice.
14
SRAM
AS8S512K32
& AS8S512K32A
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE
Package Designator Q
Micross Part#
AS8S512K32Q‐12/Q AS8S512K32Q‐12/Q AS8S512K32Q‐12L/Q AS8S512K32Q‐12L/Q AS8S512K32Q‐15/Q AS8S512K32Q‐15/Q AS8S512K32Q‐15L/Q
AS8S512K32Q‐15L/Q AS8S512K32Q‐15L/Q AS8S512K32Q‐17/Q AS8S512K32Q‐17/Q AS8S512K32Q‐17L/Q AS8S512K32Q‐17L/Q AS8S512K32Q‐20/Q AS8S512K32Q‐20/Q AS8S512K32Q‐20L/Q AS8S512K32Q‐20L/Q
AS8S512K32Q‐20L/Q AS8S512K32Q‐25/Q AS8S512K32Q‐25/Q AS8S512K32Q‐25L/Q AS8S512K32Q‐25L/Q AS8S512K32Q‐35/Q AS8S512K32Q‐35/Q AS8S512K32Q‐35L/Q AS8S512K32Q‐35L/Q AS8S512K32Q 45/Q
AS8S512K32Q‐45/Q AS8S512K32Q‐45/Q AS8S512K32Q‐45L/Q AS8S512K32Q‐45L/Q AS8S512K32Q‐55/Q AS8S512K32Q‐55/Q AS8S512K32Q‐55L/Q AS8S512K32Q‐55L/Q SMD Part#
5962‐9461118HMA 5962‐9461118HMC 5962‐9461120HMA 5962‐9461120HMC 5962‐9461117HMA 5962‐9461117HMC 5962‐9461119HMA
5962‐9461119HMA 5962‐9461119HMC 5962‐9461116HMA 5962‐9461116HMC 5962‐9461110HMA 5962‐9461110HMC 5962‐9461115HMA 5962‐9461115HMC 5962‐9461109HMA 5962‐9461109HMC
5962‐9461109HMC 5962‐9461114HMA 5962‐9461114HMC 5962‐9461108HMA 5962‐9461108HMC 5962‐9461113HMA 5962‐9461113HMC 5962‐9461107HMA 5962‐9461107HMC 5962 9461112HMA
5962‐9461112HMA 5962‐9461112HMC 5962‐9461106HMA 5962‐9461106HMC 5962‐9461111HMA 5962‐9461111HMC 5962‐9461105HMA 5962‐9461105HMC Package Designator Q1
Micross Part#
AS8S512K32Q1‐12/883C AS8S512K32Q1‐12/883C AS8S512K32Q1‐12L/883 AS8S512K32Q1‐12L/883 AS8S512K32Q1‐15/883C AS8S512K32Q1‐15/883C AS8S512K32Q1‐15L/883
AS8S512K32Q1‐15L/883 AS8S512K32Q1‐15L/883 AS8S512K32Q1‐17/883C AS8S512K32Q1‐17/883C AS8S512K32Q1‐17L/883 AS8S512K32Q1‐17L/883 AS8S512K32Q1‐20/883C AS8S512K32Q1‐20/883C AS8S512K32Q1‐20L/883 AS8S512K32Q1‐20L/883
AS8S512K32Q1‐20L/883 AS8S512K32Q1‐25/883C AS8S512K32Q1‐25/883C AS8S512K32Q1‐25L/883 AS8S512K32Q1‐25L/883 AS8S512K32Q1‐35/883C AS8S512K32Q1‐35/883C AS8S512K32Q1‐35L/883 AS8S512K32Q1‐35L/883 AS8S512K32Q1 45/883C
AS8S512K32Q1‐45/883C AS8S512K32Q1‐45/883C AS8S512K32Q1‐45L/883 AS8S512K32Q1‐45L/883 AS8S512K32Q1‐55/883C AS8S512K32Q1‐55/883C AS8S512K32Q1‐55L/883 AS8S512K32Q1‐55L/883 SMD Part#
5962‐9461118HAA 5962‐9461118HAC 5962‐9461120HAA 5962‐9461120HAC 5962‐9461117HAA 5962‐9461117HAC 5962‐9461119HAA
5962‐9461119HAA 5962‐9461119HAC 5962‐9461116HAA 5962‐9461116HAC 5962‐9461110HAA 5962‐9461110HAC 5962‐9461115HAA 5962‐9461115HAC 5962‐9461109HAA 5962‐9461109HAC
5962‐9461109HAC 5962‐9461114HAA 5962‐9461114HAC 5962‐9461108HAA 5962‐9461108HAC 5962‐9461113HAA 5962‐9461113HAC 5962‐9461107HAA 5962‐9461107HAC 5962 9461112HAA
5962‐9461112HAA 5962‐9461112HAC 5962‐9461106HAA 5962‐9461106HAC 5962‐9461111HAA 5962‐9461111HAC 5962‐9461105HAA 5962‐9461105HAC Package Designator P
Micross Part#
AS8S512K32P‐12/Q AS8S512K32P‐12/Q AS8S512K32P‐12L/Q AS8S512K32P‐12L/Q AS8S512K32P‐15/Q AS8S512K32P‐15/Q AS8S512K32P‐15L/Q
AS8S512K32P‐15L/Q AS8S512K32P‐15L/Q AS8S512K32P‐17/Q AS8S512K32P‐17/Q AS8S512K32P‐17L/Q AS8S512K32P‐17L/Q AS8S512K32P‐20/Q AS8S512K32P‐20/Q AS8S512K32P‐20L/Q AS8S512K32P‐20L/Q
AS8S512K32P‐20L/Q AS8S512K32P‐25/Q AS8S512K32P‐25/Q AS8S512K32P‐25L/Q AS8S512K32P‐25L/Q AS8S512K32P‐35/Q AS8S512K32P‐35/Q AS8S512K32P‐35L/Q AS8S512K32P‐35L/Q AS8S512K32P 45/Q
AS8S512K32P‐45/Q AS8S512K32P‐45/Q AS8S512K32P‐45L/Q AS8S512K32P‐45L/Q AS8S512K32P‐55/Q AS8S512K32P‐55/Q AS8S512K32P‐55L/Q AS8S512K32P‐55L/Q SMD Part#
5962‐9461118HTA 5962‐9461118HTC 5962‐9461120HTA 5962‐9461120HTC 5962‐9461117HTA 5962‐9461117HTC 5962‐9461119HTA
5962‐9461119HTA 5962‐9461119HTC 5962‐9461116HTA 5962‐9461116HTC 5962‐9461110HTA 5962‐9461110HTC 5962‐9461115HTA 5962‐9461115HTC 5962‐9461109HTA 5962‐9461109HTC
5962‐9461109HTC 5962‐9461114HTA 5962‐9461114HTC 5962‐9461108HTA 5962‐9461108HTC 5962‐9461113HTA 5962‐9461113HTC 5962‐9461107HTA 5962‐9461107HTC 5962 9461112HTA
5962‐9461112HTA 5962‐9461112HTC 5962‐9461106HTA 5962‐9461106HTC 5962‐9461111HTA 5962‐9461111HTC 5962‐9461105HTA 5962‐9461105HTC P k
Package Designator BQFP
D i
t BQFP
Micross Part#
AS8S512K32BQFP‐20/883C AS8S512K32BQFP‐25/883C AS8S512K32BQFP‐25/883C AS8S512K32BQFP‐35/883C AS8S512K32BQFP‐35/883C AS8S512K32BQFP‐45/883C AS8S512K32BQFP‐45/883C AS8S512K32BQFP‐55/883C AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
SMD Part#
5962‐9562409HNC 5962‐9562408HNC 5962‐9562412HNC 5962‐9562407HNC 5962‐9562411HNC 5962‐9562406HNC 5962‐9562410HNC 5962‐9562405HNC Micross Components reserves the right to change products or specifications without notice.
15
SRAM
AS8S512K32
& AS8S512K32A
DOCUMENT TITLE
512K x 32 SRAM MEMORY ARRAY
Rev #
6.5
HistoryRelease Date
Updated Features, Temp Range & April 2010
General Description - Page 1,
Updated Order Chart - Page 13,
Removed Space Processing - Page 13
Status
Release
6.6
Updated Ordering Table, Page 14
June 2010
Updated DSCC Cross Reference, Page 15
Added SMD 5962-95624, Page 1
Added BQFP Package, Page 1 and added
BQFP drawing on page 13 (BQFP package
is listed on SMD 5962-95624)
Release
6.7
Updated Q2 Spec, Page 10
Release
July 2010
6.8 Page 3 Changes:June 2011Release
From
To
•ICC (mA)
-17
700175
-20
650150
-25
600140
-35
570130
-45
570120
-55
550110
•ISBT1 (mA)
-12
8040
-15
8040
-17
24040
-20
24035
-25
19035
-35
19030
-45
15030
-55
15030
•ISBT2(mA)80 20
•2V ICCDR(mA) 20
10
•3V ICCDR(mA) 28
12
•Removed note from page 8 "-12 &-15 have a 32mA limit".
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
16
SRAM
AS8S512K32
& AS8S512K32A
Rev #
6.9
HistoryRelease Date
Added 68 Lead CQFP (BQFP)
August 2013
Military SMD Pinout Option
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Status
Release
Micross Components reserves the right to change products or specifications without notice.
17