ROHM 2SC2411KT146R

2SC2411K
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K
zExternal dimensions (Units : mm)
2SC2411K
2.9±0.2
1.1+0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
(2)
1.6+0.2
−0.1
(1)
zStructure
Epitaxial planar type
NPN silicon transistor
0 ∼ 0.1
2.8±0.2
zFeatures
1) High ICMax.
ICMax. = 0.5A
2) Low VCE(sat).
Optimal for low voltage operation.
3) Complements the 2SA1036K.
All terminals have same dimensions
+0.1
0.15 −0.06
0.4 +0.1
−0.05
0.3 ~ 0.6
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : C∗
∗ Denotes hFE
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*
* PC must not be exceeded.
Rev.A
1/3
2SC2411K
Transistors
zElectrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
40
−
−
V
IC = 100µA
Collector-emitter breakdown voltage
BVCEO
32
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 100µA
Collector cutoff current
ICBO
−
−
1
µA
VCB = 20V
Emitter cutoff current
IEBO
−
−
1
µA
VEB = 4V
Parameter
hFE
120
−
390
−
VCE = 3V, IC = 100mA
VCE (sat)
−
−
0.6
V
IC/IB = 500mA/50mA
fT
−
250
−
MHz
Cob
−
6.5
−
pF
DC current transfer ratio
Collector-emitter saturation voltage
Conditions
Transition frequency
Output capacitance
VCE = 5V, IE = −20mA, f = 100MHz
VCB = 10V, IE = 0A, f = 1MHz
zPackaging Specifications and hFE
Package
Type
hFE
2SC2411K
QR
Taping
Code
T146
Basic ordering unit (pieces)
3000
hFE values are classified as follows:
Item
Q
R
hFE
120 to 270
180 to 390
COLLECTOR CURRENT : IC (mA)
500
100
VCE=6V
COLLECTOR CURRENT : IC (mA)
1000
200
100
Ta=100°C
50
−25°C
80°C
25°C
20
10
−55°C
5
2
1
0.5
Ta=25°C
A
0.45m
A
0.40m
mA
0.50
0.35mA
0.30mA
0.25mA
50
0.20mA
0.15mA
0.10mA
0.05mA
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9
1.0
1.1
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1
Grounded emitter propagation
characteristics
0
0
1
2
3
IB=0A
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
Grounded emitter output
characteristics ( Ι )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
1
Ta=25°C
lC/lB=10
0.5
0.2
0.1
0.05
0.02
0.5
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Rev.A
2/3
2SC2411K
1000
Ta=25°C
lC/lB=10
VCE=3V
500
0.5
0.2
0.1
0.05
Ta=100°C
75°C
50°C
100
25°C
0°C
°C
50
−25
°C
−50
200
20
0.02
0.5
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
0.5 1
2
5 10 20
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current
Fig.4 Collector-emitter saturation voltage
vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
10
0.1 0.2
500
TRANSITION FREQUENCY : fT (MHz)
1
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Transistors
Ta=25°C
VCE=5V
200
100
50
−0.5
−1
−2
−5
−10
−20
−50
EMITTER CURRENT : IE (mA)
Fig. 6 Gain bandwidth product vs.
emitter current
Ta=25°C
f=1MHz
IE=0A
IC=0A
50
Cib
20
Co
10
b
5
2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1