SSFM2506
25V N-Channel MOSFET
Main Product Characteristics:
VDSS
25V
RDS(on)
4.1mohm(typ.)
ID
60A
Marking and pin
Features and Benefits:
Schematic diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead Free Product
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely
low on resistance, fast switching speed and short reverse recovery time. These features combine to make this
design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other
applications.
Absolute Max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
60
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
50
IDM
Pulsed Drain Current②
130
ISM
Pulsed Source Current (Body Diode)②
130
PD @TC = 25°C
Power Dissipation③
45
W
PD @TC =100°C
Power Dissipation③
22
W
VDS
Drain-Source Voltage
25
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
1.5
V/nS
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
90
EAR
Repetitive avalanche energy
228
IAR
Avalanche Current @ L=0.1mH②
42
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
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Page 1 of 7
A
mJ
Rev.1.2
SSFM2506
25V N-Channel MOSFET
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Value
Unit
Junction-to-case③
2.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
13
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
36
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Min.
Typ.
Max.
Units
25
—
—
V
—
4.1
6
Conditions
VGS = 0V, ID = 250μA
VGS=10V
RDS(on)
Static Drain-to-Source
mΩ
on-resistance
—
6.5
—
1.2
1.9
2.5
ID = 30A
TJ = 125℃
VDS = VGS,
VGS(th)
IDSS
Gate threshold voltage
Drain-to-Source leakage
current
Gate-to-Source forward
IGSS
leakage
Gate-to-Source reverse
leakage
V
—
1.2
—
—
—
10
—
50
—
—
100
-100
—
—
Total gate charge
—
35.8
40
Qgs
Gate-to-Source charge
—
3.8
6
—
13.1
15
Qgd
charge
td(on)
Turn-on delay time
—
10.5
—
tr
Rise time
—
65.7
—
td(off)
Turn-Off delay time
—
27.0
—
tf
Fall time
—
8.2
—
Ciss
Input capacitance
—
1732
—
Coss
Output capacitance
—
512
—
—
323
—
—
1.4
—
Crss
Rg
Reverse transfer
capacitance
Gate resistance
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VDS = 25V,
VGS = 0V
VDS = 25V, VGS = 0V,
TJ = 55°C
VGS =20V
nA
Qg
Gate-to-Drain("Miller")
TJ = 125℃
μA
—
ID = 250μA
Page 2 of 7
VGS = -20V
ID = 30A,
nC
VDS=12.5V,
VGS = 10V
VGS=10V, VDS=12.5V,
ns
RL=0.42Ω,
RGEN=3Ω
VGS = 0V,
pF
VDS = 12.5V,
ƒ = 1.0MHz
Ω
VGS=0V,VDS=0V,
f=1MHz
Rev.1.2
SSFM2506
25V N-Channel MOSFET
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Min.
Typ.
Max.
Units
—
60
—
A
Maximum Body-Diode
Continuous Curren
Conditions
VSD
Diode Forward Voltage
—
0.69
1
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
18.3
—
ns
TJ = 25°C, IF =30A, di/dt =
Qrr
Reverse Recovery Charge
—
6.4
—
nC
150A/μs
Test Circuits and Waveforms
Switch Waveforms:
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Page 3 of 7
Rev.1.2
SSFM2506
25V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
100
100
90
6V
7V
80
ID,drain current(A)
ID,drain current(A)
10V
4.5V
60
4V
40
3.5V
20
VDS=5V
80
70
60
50
40
30
20
125℃
10
25℃
0
0
0
1
2
3
4
0
5
0.5
VDS,drain to source voltage(V)
Rdson,Drain-to-Source On
Resistance(Normalized)
Rdson,Drain-to-Source On
Resistance
VGS=4.5V
8
7
6
VGS=10V
4
3
0
5
10
15
20
25
1.9
1.8
2.5
3
3.5
4
4.5
5
VGS=10V
1.7
1.6
1.5
1.4
ID=30A
VGS=4.5V
1.3
1.2
1.1
1
ID=20A
0.9
0.8
0
30
25
50
75
100
125
150
175
200
Tj,Junction Temperature(°C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current
Figure 4: On-Resistance vs. Junction
and Gate Voltage
Temperature
1.E+02
IS,source to drain current(A)
30
Rdson,Drain-to-Source On
Resistance(Normalized)
2
Figure 2: Typical Transfer Characteristics
10
5
1.5
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics
9
1
ID=30A
25
20
125℃
15
10
25℃
5
0
2
3
4
5
6
7
8
9
10
1.E+01
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
VGS,gate to source voltage(V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD,source to drain voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
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125℃
1.E+00
Figure 6: Body-Diode Characteristics
Page 4 of 7
Rev.1.2
1.1
SSFM2506
25V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
3000
VGS,gate to source voltage(V)
10
9
2500
Capacitance (pF)
8
7
6
5
VDS=12.5V
4
ID=30A
3
Ciss
2000
1500
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
1000
Coss=Cds+Cgd
Coss
Crss=Cgd
2
500
Crss
1
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 7: Gate-Charge Characteristics Figure
Figure 8: Capacitance Characteristics
200
1000
Tj(max)=175℃
160
100
10uS
140
Ron limited
100uS
10
DC
1mS
Power ( W)
ID,drain current(A)
180
100
80
60
10mS
1
Ta=25℃
120
40
Tj(max)=175℃ Tc=25℃
20
0.1
0.01
0.1
1
10
0
0.0001
100
0.001
0.01
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
50
50
ID,drain current(A)
Power Dissipation (W)
60
40
30
20
10
0
50
75
100
125
150
175
40
30
20
10
0
0
TCASE (°C)
25
50
75
100
125
150
TCASE (°C)
Figure 11: Power De-rating③
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10
Junction-to-Case⑤
60
25
1
Figure 10: Single Pulse Power Rating
Operating Area⑤
0
0.1
Pulse Width (s)
Figure 12: Current De-rating③
Page 5 of 7
Rev.1.2
175
SSFM2506
25V N-Channel MOSFET
ZθJC,Transient Thermal
Resistance( Normalized
)
Typical Electrical and Thermal Characteristics
10
t
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
tp
1
0.1
D=tp/t
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.01
0.00001 0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
ZθJA,Transient Thermal
Resistance( Normalized
)
Figure 13: Normalized Maximum Transient Thermal Impedance⑤
10
Duty cycle D=0.5,0.3,0.1, 0.05,0.01,single
1
t
0.1
tp D=tp/t
TJ（max）＝PDM*ZθJA*RθJA+TA
0.01
RθJA=36℃/W
0.001
0.00001 0.0001 0.001
0.01
0.1
1
Pulse Width (s)
10
100
1000
Figure 14: Normalized Maximum Transient Thermal Impedance⑥
Notes:
① The maximum current rating is limited by bond-wires.
② Repetitive rating; pulse width limited by max. junction temperature.
③ The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 6 of 7
Rev.1.2
SSFM2506
25V N-Channel MOSFET
Mechanical Data：
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Page 7 of 7
Rev.1.2