cf5073_nc0105ce

CF5073 series
VCXO Module ICs with Built-in Varicap
OVERVIEW
The CF5073 series are VCXO ICs with built-in varicap diode. They use a recently developed negative-resistance switching oscillation circuit, at oscillation startup and during normal oscillation, for both good oscillation startup characteristics and wide pullrange. Furthermore, it employs a CMOS process varicap diode, and
also features all the necessary VCXO structure circuit components on a single chip, forming a VCXO module
with just the connection of an external crystal.
FEATURES
■
■
■
■
■
3.0 to 3.6V supply voltage range
10MHz to 60MHz operating frequency
(varies with version)
Uses negative-resistance switching function
Varicap diode built-in
Frequency divider built-in (varies with version: fO,
fO/2, fO/4, fO/8, fO/16, fO/32)
■
■
■
■
■
■
CMOS output level
50 ± 10% output duty
6mA (min) output drive capability
15pF output load capacitance CL
Standby function
(high impedance in standby mode)
Chip form (CF5073××)
SERIES LINEUP
Version
Typical oscillation
frequency1 [MHz]
CF5073A×
16
CF5073B×
23
CF5073C×
30
CF5073D×
37
CF5073E×
44
CF5073F×
51
Output frequency
CF5073×1
CF5073×22
CF5073×32
CF5073×42
CF5073×52
CF5073×62
fO
fO/2
fO/4
fO/8
fO/16
fO/32
1. The typical oscillation frequency is the oscillation frequency criteria for use when selecting the device version. Note that the oscillation
characteristics and pullability vary with the crystal used and the mounting conditions. Even for the same frequency, the optimal version can vary
with crystal characteristics, so careful evaluation should be exercised when selecting the device version.
2. These versions are produced after receiving a purchase order. Please ask our Sales & Marketing section for further detail.
APPLICATIONS
■
■
■
■
VCXO modules
Communications application
Networking application
Broadcasting application
ORDERING INFORMATION
Device
Package
CF5073××−1
Chip form
SEIKO NPC CORPORATION —1
CF5073 series
PAD LAYOUT
(Unit: µm)
VC
XTN
XT
7
6
(1240,1400)
1
5
VDD
4
Q
HA5073
INHN
2
3
(0,0)
VSS
Chip size: 1.24 × 1.4mm
Chip thickness: 300 ± 30µm
Chip base: VDD potential
PAD DESCRIPTION AND DIMENSIONS
Pad dimensions [µm]
Pad No.
Name
I/O
Description
Function
X
Y
1
VC
I
Oscillation frequency control
voltage input pin
Positive polarity (frequency increases with
increasing voltage)
134
915
2
INHN
I
Output state control voltage
input pin
High-impedance output when LOW, pull-up
resistor built-in
137
295
3
VSS
–
(−) supply pin
458
137
4
Q
O
Output pin
1086
155
5
VDD
–
(+) supply pin
1106
772
6
XT
I
Amplifier input pin
829
1263
7
XTN
O
Amplifier output pin
416
1260
Output frequency determined by internal
circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32
Crystal connection pins.
Crystal is connected between XT and XTN.
SEIKO NPC CORPORATION —2
CF5073 series
BLOCK DIAGRAM
Rf
1/2
CG
1/2
1/2
1/2
1/2
XT
Q
RD
CV
XTN
CC
CD
VDD
RB2
RB1
VC
VSS
RUP
INHN
Note. ESD of XT pin is inferior to other pins.
ESD of all pins excluding XT pin is equivalent to that of our other oscillator products.
VC pin has no protection circuit at VDD side. (See figure below.)
VC
Internal circuit
SEIKO NPC CORPORATION —3
CF5073 series
ABSOLUTE MAXIMUM RATINGS
VSS = 0V unless otherwise noted.
Parameter
Symbol
Supply voltage range
VDD
Input voltage range
VIN
Conditions
All input pins excluding VC pin
Rating
Unit
−0.5 to 7.0
V
−0.5 to VDD + 0.5
V
+ 2.51
V
−0.5 to VDD
VC pin
Output voltage range
VOUT
−0.5 to VDD + 0.5
V
Operating temperature range
Topr
−40 to +85
°C
Storage temperature range
TSTG
−65 to +150
°C
Output current
IOUT
20
mA
1. It should not exceed + 7.0V.
RECOMMENDED OPERATING CONDITIONS
VSS = 0V, f = 10MHz to 60MHz, CL ≤ 15pF unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
Operating supply voltage
VDD
3.0
–
3.6
V
Input voltage
VIN
VSS
–
VDD
V
TOPR
–40
–
+85
°C
Operating temperature
SEIKO NPC CORPORATION —4
CF5073 series
ELECTRICAL CHARACTERISTICS
CF5073A×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
HIGH-level output voltage
VOH
Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
LOW-level output voltage
VOL
Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
VOH = VDD
–
–
10
µA
VOL = VSS
–
–
10
µA
IZ
Q: Measurement circuit 6,
INHN = LOW
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
CF5073A1
–
8
20
mA
CF5073A2
–
7.5
19.5
mA
IDD
Measurement circuit 2, load
circuit 1, INHN = open,
CL = 15pF,
f = 16MHz
CF5073A3
–
7
19.5
mA
CF5073A4 to 6
–
7
19
mA
Measurement circuit 3
50
100
180
kΩ
Design value. A monitor pattern on a wafer is
tested.
150
300
540
kΩ
0.67
0.96
1.25
kΩ
RB1
Measurement circuit 4
100
200
360
kΩ
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
Design value. A monitor
pattern on a wafer is tested.
VC = 0.3V
11.0
14.4
17.8
pF
CV
VC = 3.0V
2.4
4.0
5.6
pF
25.5
30
34.5
pF
34
40
46
pF
8.5
10
11.5
pF
Output leakage current
Current consumption
INHN pull-up resistance
RUP
Rf
RD
Built-in resistance
Built-in capacitance
CG
CD
CC
Design value. A monitor pattern on a wafer is
tested.
SEIKO NPC CORPORATION —5
CF5073 series
CF5073B×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
HIGH-level output voltage
VOH
Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
LOW-level output voltage
VOL
Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
VOH = VDD
–
–
10
µA
VOL = VSS
–
–
10
µA
IZ
Q: Measurement circuit 6,
INHN = LOW
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
CF5073B1
–
9
22
mA
CF5073B2
–
8
21
mA
IDD
Measurement circuit 2, load
circuit 1, INHN = open,
CL = 15pF,
f = 23MHz
CF5073B3
–
7.5
20.5
mA
CF5073B4 to 6
–
7.5
20.5
mA
Measurement circuit 3
50
100
180
kΩ
Design value. A monitor pattern on a wafer is
tested.
150
300
540
kΩ
0.50
0.72
0.94
kΩ
RB1
Measurement circuit 4
100
200
360
kΩ
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
Design value. A monitor
pattern on a wafer is tested.
VC = 0.3V
11.0
14.6
18.2
pF
CV
VC = 3.0V
2.3
4.0
5.7
pF
25.5
30
34.5
pF
34
40
46
pF
12.7
15
17.3
pF
Output leakage current
Current consumption
INHN pull-up resistance
RUP
Rf
RD
Built-in resistance
Built-in capacitance
CG
CD
CC
Design value. A monitor pattern on a wafer is
tested.
SEIKO NPC CORPORATION —6
CF5073 series
CF5073C×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
HIGH-level output voltage
VOH
Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
LOW-level output voltage
VOL
Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
VOH = VDD
–
–
10
µA
VOL = VSS
–
–
10
µA
IZ
Q: Measurement circuit 6,
INHN = LOW
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
CF5073C1
–
10
24
mA
CF5073C2
–
9
23
mA
IDD
Measurement circuit 2, load
circuit 1, INHN = open,
CL = 15pF,
f = 30MHz
CF5073C3
–
8.5
22.5
mA
CF5073C4 to 6
–
8
22
mA
Measurement circuit 3
50
100
180
kΩ
Design value. A monitor pattern on a wafer is
tested.
150
300
540
kΩ
0.50
0.72
0.94
kΩ
RB1
Measurement circuit 4
100
200
360
kΩ
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
Design value. A monitor
pattern on a wafer is tested.
VC = 0.3V
11.0
14.6
18.2
pF
CV
VC = 3.0V
2.3
4.0
5.7
pF
25.5
30
34.5
pF
25.5
30
34.5
pF
29.7
35
40.3
pF
Output leakage current
Current consumption
INHN pull-up resistance
RUP
Rf
RD
Built-in resistance
Built-in capacitance
CG
CD
CC
Design value. A monitor pattern on a wafer is
tested.
SEIKO NPC CORPORATION —7
CF5073 series
CF5073D×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
HIGH-level output voltage
VOH
Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
LOW-level output voltage
VOL
Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
VOH = VDD
–
–
10
µA
VOL = VSS
–
–
10
µA
IZ
Q: Measurement circuit 6,
INHN = LOW
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
CF5073D1
–
11
26
mA
CF5073D2
–
9.5
24.5
mA
IDD
Measurement circuit 2, load
circuit 1, INHN = open,
CL = 15pF,
f = 37MHz
CF5073D3
–
9
24
mA
CF5073D4 to 6
–
8.5
23.5
mA
Measurement circuit 3
50
100
180
kΩ
Design value. A monitor pattern on a wafer is
tested.
150
300
540
kΩ
0.25
0.36
0.47
kΩ
RB1
Measurement circuit 4
100
200
360
kΩ
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
Design value. A monitor
pattern on a wafer is tested.
VC = 0.3V
11.0
14.6
18.2
pF
CV
VC = 3.0V
2.3
4.0
5.7
pF
25.5
30
34.5
pF
25.5
30
34.5
pF
34
40
46
pF
Output leakage current
Current consumption
INHN pull-up resistance
RUP
Rf
RD
Built-in resistance
Built-in capacitance
CG
CD
CC
Design value. A monitor pattern on a wafer is
tested.
SEIKO NPC CORPORATION —8
CF5073 series
CF5073E×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
HIGH-level output voltage
VOH
Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
LOW-level output voltage
VOL
Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
VOH = VDD
–
–
10
µA
VOL = VSS
–
–
10
µA
IZ
Q: Measurement circuit 6,
INHN = LOW
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
CF5073E1
–
12
28
mA
CF5073E2
–
10.5
26.5
mA
IDD
Measurement circuit 2, load
circuit 1, INHN = open,
CL = 15pF,
f = 44MHz
CF5073E3
–
9.5
25.5
mA
CF5073E4 to 6
–
9
25
mA
Measurement circuit 3
50
100
180
kΩ
Design value. A monitor pattern on a wafer is
tested.
150
300
540
kΩ
0.25
0.36
0.47
kΩ
RB1
Measurement circuit 4
100
200
360
kΩ
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
Design value. A monitor
pattern on a wafer is tested.
VC = 0.3V
11.0
14.6
18.2
pF
CV
VC = 3.0V
2.3
4.0
5.7
pF
21.2
25
28.8
pF
21.2
25
28.8
pF
42.5
50
57.5
pF
Output leakage current
Current consumption
INHN pull-up resistance
RUP
Rf
RD
Built-in resistance
Built-in capacitance
CG
CD
CC
Design value. A monitor pattern on a wafer is
tested.
SEIKO NPC CORPORATION —9
CF5073 series
CF5073F×
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
HIGH-level output voltage
VOH
Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
LOW-level output voltage
VOL
Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
VOH = VDD
–
–
10
µA
VOL = VSS
–
–
10
µA
IZ
Q: Measurement circuit 6,
INHN = LOW
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
CF5073F1
–
13
30
mA
CF5073F2
–
11
28
mA
IDD
Measurement circuit 2, load
circuit 1, INHN = open,
CL = 15pF,
f = 51MHz
CF5073F3
–
10
27
mA
CF5073F4 to 6
–
9.5
26.5
mA
Measurement circuit 3
50
100
180
kΩ
Design value. A monitor pattern on a wafer is
tested.
150
300
540
kΩ
0.25
0.36
0.47
kΩ
RB1
Measurement circuit 4
100
200
360
kΩ
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
Design value. A monitor
pattern on a wafer is tested.
VC = 0.3V
9.5
12.5
15.5
pF
CV
VC = 3.0V
2.0
3.5
5.0
pF
17
20
23
pF
17
20
23
pF
42.5
50
57.5
pF
Output leakage current
Current consumption
INHN pull-up resistance
RUP
Rf
RD
Built-in resistance
Built-in capacitance
CG
CD
CC
Design value. A monitor pattern on a wafer is
tested.
SEIKO NPC CORPORATION —10
CF5073 series
SWITCHING CHARACTERISTICS
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted
Rating1
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
Output rise time
tr1
Measurement circuit 2, load circuit 1,
0.1VDD → 0.9VDD, CL = 15pF
–
2.5
6
ns
Output fall time
tf1
Measurement circuit 2, load circuit 1,
0.9VDD → 0.1VDD, CL = 15pF
–
2.5
6
ns
Output duty cycle
Duty
Measurement circuit 2, load circuit 1,
VDD = 3.3V, Ta = 25°C, CL = 15pF
40
50
60
%
Output disable delay time
tPLZ
–
–
100
ns
Output enable delay time
tPZL
–
–
100
ns
Measurement circuit 5, load circuit 1,
VDD = 3.3V, Ta = 25°C, CL ≤ 15pF
1. The switching characteristics apply for normal output waveforms. Note that, depending on the matching of the CF5073 series version and crystal,
normal waveform output may not be continuous.
Current consumption and Output waveform with NPC’s standard crystal
C0
L1
C1
f [MHz]
R1 [Ω]
L1 [mH]
C1 [fF]
C0 [pF]
30
7.06
2.25
12.5
3.11
R1
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the Q output pin becomes high impedance.
INHN
Q
Oscillator
HIGH (or open)
Any fO, fO/2, fO/4, fO/8, fO/16, or fO/32
Operating
LOW
High impedance
Operating
SEIKO NPC CORPORATION —11
CF5073 series
MEASUREMENT CIRCUITS
Measurement Circuit 4
Measurement Circuit 1
R3
VDD
Signal
Generator
When
measuring VOL
IRB1 A
C1
XT
R1
VDD
VC
Q
VC
VSS
R2
Q output
VDD
VOH
0V
Q output
VDD
VOL
0V
RB1 =
When
measuring VOH
VDD
IRB1
XTN
VSS
XT input signal: 2.5Vp-p, 10MHz, sine wave
C1 = 0.001µF, R1 = 50Ω, R2 = 417Ω, R3 = 434Ω, VC = 1.65V
Measurement Circuit 5
Measurement Circuit 2
A
VDD
XT
Signal
Generator
INHN
X'tal
XTN
C1
XT
VC
R1
INHN
Q
VSS
Q
VC
VDD
VSS
VC = 1.65V, INHN = open, crystal oscillation
XT input signal: 2.5Vp-p, 10MHz, sine wave
C1 = 0.001µF, R1 = 50Ω, VC = 1.65V
Measurement Circuit 6
Measurement Circuit 3
RUP =
VDD
VDD
IRUP
VDD
INHN
INHN
VC
VC = 1.65V
Q
VC
A IRUP
VSS
A
VSS
VC = 1.65V
SEIKO NPC CORPORATION —12
CF5073 series
Load Circuit 1
Q output
CL
(Including probe capacitance)
Switching Time Measurement Waveform
Output duty level, tr, tf
Q output
0.9V DD
0.9V DD
0.1V DD
0.1V DD
DUTY measurement
voltage (0.5V DD )
TW
tr1
tf1
Output duty cycle
DUTY measurement
voltage (0.5V DD)
Q output
TW
DUTY= TW/ T
T
100 (%)
Output Enable/Disable Delay Times
INHN
VIH
VIL
tPZL
tPLZ
Q output
INHN input waveform tr = tf
10ns
SEIKO NPC CORPORATION —13
CF5073 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
1-9-9, Hatchobori, Chuo-ku,
Tokyo 104-0032, Japan
Telephone: +81-3-5541-6501
Facsimile: +81-3-5541-6510
http://www.npc.co.jp/
Email: [email protected]
NC0105CE
2006.04
SEIKO NPC CORPORATION —14