Datasheet

AON2800
20V Dual N-Channel MOSFET
General Description
Product Summary
The AON2800 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
VDS
20V
4.5A
RDS(ON) (at VGS=4.5V)
< 47mΩ
RDS(ON) (at VGS=2.5V)
< 65mΩ
ESD Protected
DFN 2x2 Package
S1
G1
D2
D1
D2
Pin 1
G1
D1
G2
G2
S2
Pin 1
Top
S1
Bottom
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
Rev 1: August 2011
Steady-State
t ≤ 10s
Steady-State
V
A
1.5
W
0.95
TJ, TSTG
Symbol
t ≤ 10s
±8
24
PD
TA=70°C
Units
V
3.8
IDM
TA=25°C
Power Dissipation B
Maximum
20
4.5
ID
TA=70°C
S2
RθJA
RθJA
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-55 to 150
Typ
35
65
120
175
°C
Max
45
85
155
235
Units
°C/W
°C/W
°C/W
°C/W
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AON2800
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
20
µA
0.8
1.2
V
37
47
55
70
VGS=2.5V, ID=3A
47
65
Gate-Body leakage current
VDS=0V, VGS= ±8V
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
24
VGS=4.5V, ID=4A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=4A
14
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
mΩ
mΩ
S
1
V
1.5
A
285
360
435
pF
VGS=0V, VDS=10V, f=1MHz
45
65
85
pF
30
50
70
pF
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
Ω
4.15
6
nC
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
µA
5
Gate Threshold Voltage
Output Capacitance
Units
V
1
VGS(th)
Coss
Max
20
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=4.5V, VDS=10V, ID=4A
0.55
nC
Gate Drain Charge
1.15
nC
tD(on)
Turn-On DelayTime
9.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
43
ns
26
ns
tf
Turn-Off Fall Time
39
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=4A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
3
ns
nC
VGS=4.5V, VDS=10V, RL=2.5Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: August 2011
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Page 2 of 5
AON2800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
15
4.5V
2.5V
VDS=5V
3V
12
12
3.5V
9
ID(A)
ID (A)
9
2V
125°C
6
6
3
3
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
70
2
3
4
Normalized On-Resistance
1.8
60
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note D)
VDS (Volts)
Fig 1: On-Region Characteristics (Note D)
VGS=2.5V
50
40
VGS=4.5V
30
20
VGS=4.5V
ID=4A
1.6
1.4
17
5
2
VGS=2.5V10
1.2
ID=3A
1
0.8
0
2
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note D)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note D)
100
1.0E+02
90
1.0E+01
80
1.0E+00
70
1.0E-01
40
IS (A)
RDS(ON) (mΩ
Ω)
ID=4A
125°C
60
1.0E-02
50
1.0E-03
125°C
25°C
25°C
40
1.0E-04
30
1.0E-05
0
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note D)
Rev 1: August 2011
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note D)
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AON2800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
600
VDS=10V
ID=4A
4
500
Capacitance (pF)
3.5
VGS (Volts)
3
2.5
2
1.5
Ciss
400
300
200
Coss
1
100
0.5
Crss
0
0
0
1
2 g (nC)
3
4
Q
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1.0
Power (W)
ID (Amps)
10.0
1ms
10ms
0.1
100
10s
DC
TJ(Max)=150°C
TA=25°C
10
0.0
1
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev 1: August 2011
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Page 4 of 5
AON2800
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 1: August 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5