AON2812 30V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant 30V 4.5A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 37mΩ RDS(ON) (at VGS=4.5V) < 45mΩ RDS(ON) (at VGS=2.5V) < 70mΩ Typical ESD protection HBM Class 3A Applications • Battery protection switch • Mobile device battery charging and discharging • Load switch D2 D1 DFN 2x2 Top View Bottom View D1 G2 S2 D1 D2 Pin 1 G2 G1 S1 D2 G1 S1 S2 Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON2812 DFN 2x2 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev.1.0: February 2014 Steady-State A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V 18 PD TA=70°C ±12 3.5 IDM TA=25°C Power Dissipation B Units V 4.5 ID TA=70°C Maximum 30 RθJA -55 to 150 Typ 40 65 www.aosmd.com °C Max 50 80 Units °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS, ID=250µA V TJ=55°C 0.6 TJ=125°C ±10 µA 1 1.4 V 30 37 41 50 VGS=4.5V, ID=1A 35 45 VGS=2.5V, ID=1A 50 70 Forward Transconductance VDS=5V, ID=2A 10 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 gFS Coss Units 1 VGS=10V, ID=2A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 3 A 235 pF 75 pF 15 Ω 12 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.5 10 nC Qg(4.5V) Total Gate Charge 2.2 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=2A VGS=10V, VDS=15V, RL=7.5Ω, RGEN=3Ω 4 pF 8 f=1MHz 0.3 nC 0.7 nC 3 ns 3 ns 24 ns 6 ns IF=2A, dI/dt=100A/µs 7.2 Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 1.3 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2014 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 3V 16 16 2.5V 4.5V 12 ID(A) ID (A) 12 2V 8 125°C 8 4 4 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 1 2 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 80 1.6 Normalized On-Resistance 70 VGS=2.5V 60 RDS(ON) (mΩ Ω) 3 50 VGS=4.5V 40 30 VGS=10V 20 VGS=4.5V ID=1A 1.4 VGS=10V ID=2A 1.2 VGS=2.5V ID=1A 1 10 0.8 0 0 2 4 6 0 8 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 80 1.0E+01 ID=2A 1.0E+00 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ Ω) 60 40 1.0E-02 25°C 1.0E-03 25°C 20 1.0E-04 0 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 350 VDS=15V ID=2A 300 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 250 200 150 Coss 100 2 Crss 50 0 0 0 1 2 3 4 5 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 10.0 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 150 100µs 1.0 1ms 10ms 0.1 100 50 TJ(Max)=150°C TA=25°C 0.0 0.01 Power (W) 10µs ID (Amps) 10 DC 0.1 1 10 VDS (Volts) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=80°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2014 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: February 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5