AOSMD AO6402B

AO6402
30V N-Channel MOSFET
General Description
Product Summary
The AO6402 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device may
be used as a load switch or in PWM applications.
ID (at VGS=10V)
VDS
30V
5A
RDS(ON) (at VGS=10V)
< 31mΩ
RDS(ON) (at VGS =4.5V)
< 43mΩ
TSOP6
Top View
D
Bottom View
Top View
D
D
D
D
G
S
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 8: February 2011
Steady-State
Steady-State
A
1.25
W
0.8
TJ, TSTG
Symbol
t ≤ 10s
V
20
PD
TA=70°C
±20
4
IDM
TA=25°C
Power Dissipation B
Units
V
5
ID
TA=70°C
Maximum
30
RθJA
RθJL
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-55 to 150
Typ
82
110
56
°C
Max
100
130
70
Units
°C/W
°C/W
°C/W
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AO6402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
25
±100
nA
1.8
2.4
V
25.5
31
41
50
VGS=4.5V, ID=4A
34
43
mΩ
1
V
1.5
A
VGS=10V, ID=5A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=5A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
255
VGS=0V, VDS=15V, f=1MHz
mΩ
S
310
45
pF
pF
35
50
pF
3.25
4.9
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
5.2
6.3
nC
Qg(4.5V)
2.55
3.2
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=5A
VGS=10V, VDS=15V, RL=3Ω,
RGEN=3Ω
1.6
0.85
nC
1.3
nC
4.5
ns
2.5
ns
14.5
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
8.5
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
2.2
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: February 2011
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Page 2 of 5
AO6402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
30
10V
VDS=5V
7V
25
4.5V
10
20
ID(A)
ID (A)
4V
15
3.5V
5
10
5
VGS=3V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
Normalized On-Resistance
40
35
RDS(ON) (mΩ )
25°C
125°C
VGS=4.5V
30
25
VGS=10V
1.8
VGS=10V
ID=5A
1.6
17
5
2
VGS=4.5V10
1.4
1.2
ID=4A
1
0.8
20
0
3
6
9
12
0
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
100
1.0E+02
ID=5A
1.0E+01
40
1.0E+00
60
IS (A)
RDS(ON) (mΩ )
80
125°C
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
40
1.0E-04
25°C
1.0E-05
20
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 8: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO6402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
10
VDS=15V
ID=5A
350
300
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
250
200
150
Coss
100
2
50
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TA=25°C
1000
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
10.0
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
100
10
10s
DC
0.0
0.01
0.1
1
VDS (Volts)
10
1
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=130°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 8: February 2011
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Page 4 of 5
AO6402
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 8: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5