AOS Semiconductor Product Reliability Report AOZ8231ADI-08, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8231ADI-08. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOZ8231ADI-08 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. I. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard HTRB Temp = 150°C , Vds=80% of Vbrmax 168 / 500 / 1000 hours 308 pcs 0 JESD22-A108 Precondition (Note A) 168hr 85°C / 85%RH + 3 cycle reflow@260°C - 2772 pcs 0 JESD22-A113 HAST 130°C , 85%RH, 33.3 psia, Vds = 80% of Vbrmax 96 hours 924 pcs 0 JESD22-A110 Autoclave 121°C , 29.7psia, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air 250 / 500 cycles 924 pcs 0 JESD22-A104 Note: The reliability data presents total of available generic data up to the published date. Note A: MSL (Moisture Sensitivity Level) 1 based on J-STD-020 II. Reliability Evaluation FIT rate (per billion): 22.89 MTTF = 4987 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 22.89 9 MTTF = 10 / FIT = 4987 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 2