Product Data Sheet STW9C12B – Mid-Power LED Achieving the best system cost in Mid/High Power Mid-Power LED – 3030 Series STW9C12B (Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size : 3.0x3.0x0.6mm • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • • • • • • • Thermally Enhanced Package Design Mid Power to High Power up to 0.7W Max. Driving Current 200mA Compact Package Size High Color Quality with CRI Min. 90(R9>50) Pb-free Reflow Soldering Application Key Applications • • • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability. Replacement lamps – Tube Commercial Industrial Residential Retail Table 1. Product Selection Table CCT Part Number STW9C12B Rev1.0, Mar 30, 2016 Color Min. Typ. Max. Warm White 2,600K 3,000K 3,700K 1 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 5 • Color Bin Structure 11 • Mechanical Dimensions 16 • Recommended Solder Pad 17 • Reflow Soldering Characteristics 18 • Emitter Tape & Reel Packaging 19 • Product Nomenclature 21 • Handling of Silicone Resin for LEDs 22 • Precaution For Use 23 • Company Information 26 Rev1.0, Mar 30, 2016 2 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Performance Characteristics Table 2. Product Selection Guide, IF = 65mA, Tj = 25ºC, RH30% Luminous Intensity [2] Luminous Flux [3] CRI IV (cd) ФV (lm) Ra CCT (K) [1] Part Number RANK Typ. Min Max Min Max Min. Q5 7.5 8 22.5 24 90 R0 8 8.5 24 25.5 90 Q5 7.5 8 22.5 24 90 R0 8 8.5 24 25.5 90 Q5 7.5 8 22.5 24 90 R0 8 8.5 24 25.5 90 3500 STW9C12B 3000 2700 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. (2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. (3) The lumen table is only for reference. Rev1.0, Mar 30, 2016 3 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Performance Characteristics Table 2. Characteristics, IF=65mA, Tj= 25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 65 - mA Forward Voltage VF - 2.95 - V - 8.2 - cd Ra 90 - - 2Θ1/2 - 120 - Deg. Thermal resistance (J to S) [3] RθJ-S - 10 - ℃/W ESD Sensitivity(HBM) - Luminous Intensity[1] 3,000K Iv CRI [1] Viewing Angle [2] 65mA Class 3A JESD22-A114-E Table 3. Absolute Maximum Ratings Parameter Symbol Value Unit Forward Current IF 200 mA Power Dissipation PD 0.7 W Junction Temperature Tj 125 ºC Operating Temperature Topr -40~ + 85 ºC Storage Temperature Tstg -40 ~ + 100 ºC Notes : (1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.005 (2) 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. (3) Thermal resistance : RthJS (Junction / solder) • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. • All measurements were made under the standardized environment of Seoul Semiconductor. Rev1.0, Mar 30, 2016 4 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Characteristics Graph Fig 1. Color Spectrum, Tj = 25ºC, IF=65mA Relative Emission Intensity (a.u) 2600~3700K 1.0 0.5 0.0 300 400 500 600 700 800 Wavelength [nm] Fig 2. Radiant Pattern, Tj = 25ºC, IF=65mA Relative Intensity (%) 100 80 60 40 20 0 -100 -75 -50 -25 0 25 50 75 100 Angle [Degree] Rev1.0, Mar 30, 2016 5 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, T j = 25ºC 200 180 Forward Current IF[mA] 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward Voltage VF[V] Fig 4. Forward Current vs. Relative Luminous Intensity, Tj = 25ºC Relative Luminous Intensity [a.u.] 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 180 200 Forward Current IF[mA] Rev1.0, Mar 30, 2016 6 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift, T j = 25ºC (2600K~3700K) 0.418 0.417 0.416 150mA 100mA CIE Y 0.415 200mA 65mA 0.414 20mA 0.413 0.412 0.411 0.441 0.442 0.443 0.444 0.445 0.446 0.447 0.448 0.449 CIE X Rev1.0, Mar 30, 2016 7 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Characteristics Graph Fig 6. Junction Temperature vs. Relative Luminous Intensity, IF=65mA Relative Luminous Intensity [a.u] 1.0 0.8 0.6 0.4 0.2 0.0 25 45 65 85 105 125 O Junction Temperature Tj( C) Fig 7. Junction Temperature vs. Relative Forward Voltage, IF=65mA Relative Forward Voltage 1.0 0.8 0.6 0.4 0.2 0.0 25 45 65 85 105 125 O Junction Temperature Tj( C) Rev1.0, Mar 30, 2016 8 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Characteristics Graph Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF=65mA (2600K~3700K) 0.430 0.425 0.420 o 25 C CIE Y 0.415 o 60 C o 85 C o 105 C 0.410 o 125 C 0.405 0.400 0.395 0.430 0.435 0.440 0.445 0.450 0.455 0.460 0.465 CIE X Rev1.0, Mar 30, 2016 9 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Characteristics Graph Fig 9. Ambient Temperature vs. Maximum Forward Current, T j_max = 125℃ 250 Forward Current [mA] 200 Rth j-a = 45℃/W 150 100 50 0 0 20 40 60 80 100 O Ambient Temperature Ta [ C] Rev1.0, Mar 30, 2016 10 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Color Bin Structure Table 4. Bin Code description, Tj=25℃, IF=65mA Luminous Intensity (cd) Typical Forward Voltage (V) Color Chromaticity Coordinate Part Number Bin Code Min. Max. Q5 7.5 8.0 STW9C12B Bin Code Min. Max. Y2 2.8 2.9 Y3 2.9 3.0 Z1 3.0 3.1 Refer to page.12 R0 8.0 8.5 Table 5. Intensity rank distribution Available ranks CCT CIE IV Rank 3,200 ~ 3,700K F Q5 R0 2,900 ~ 3,200K G Q5 R0 2,600 – 2,900K H Q5 R0 *Notes : All measurements were made under the standardized environment of Seoul Semiconductor. In order to ensure availability, single color rank will not be orderable. Rev1.0, Mar 30, 2016 11 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram Tj=25℃, IF=65mA 0.46 0.44 CIE coord.(Y) 0.42 G 0.40 H F 0.38 0.36 MACADAM 3STEP Rank 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE coord.(X) *Notes : (1) Energy Star binning applied to all 2600~3700K. (2) Measurement Uncertainty of the Color Coordinates : ± 0.005 Rev1.0, Mar 30, 2016 12 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm white) 0.42 3200K 3500K 0.41 3700K CIE Y 0.40 F21 F11 F42 F32 F22 F43 F12 0.39 F33 F23 F13 0.38 F41 F31 F44 F34 F24 F14 0.37 0.39 0.40 0.41 0.42 0.43 CIE X F11 F21 F31 F41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3996 0.4015 0.4071 0.4052 0.4146 0.4089 0.4223 0.4127 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 0.4052 0.4146 0.4089 0.4223 0.4127 0.4299 0.4071 F12 F22 F32 0.4165 F42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 F13 F23 F33 F43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3889 0.3690 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.4147 0.3814 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 F14 F24 Rev1.0, Mar 30, 2016 F34 13 F44 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm white) 0.43 2900K 3000K 3200K 0.42 G41 G31 G21 G11 G42 CIE Y 0.41 G32 G22 G12 G43 0.40 G23 G33 G13 0.39 G14 G24 G44 G34 0.38 0.41 0.42 0.43 0.44 0.45 0.46 CIE X G11 G21 G31 G41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4299 0.4165 0.4364 0.4188 0.4430 0.4212 0.4496 0.4236 0.4261 0.4077 0.4324 0.4099 0.4387 0.4122 0.4451 0.4145 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4514 0.4168 0.4189 0.4430 0.4212 0.4496 0.4236 0.4562 0.4365 G12 G22 G32 0.4260 G42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4261 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4515 0.4168 G13 G23 G33 G43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4185 0.3902 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4420 0.3985 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4243 0.3922 0.4302 0.3943 0.4302 0.3943 0.4361 0.3964 0.4203 0.3834 0.4259 0.3853 0.4259 0.3853 0.4316 0.3873 0.4147 0.3814 0.4203 0.3834 0.4316 0.3873 0.4373 0.3893 0.4185 0.3902 0.4243 0.3922 0.4361 0.3964 0.4420 0.3985 G14 G24 Rev1.0, Mar 30, 2016 G34 14 G44 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm white) 0.43 2900K CIE Y H21 H11 0.42 H12 H32 H22 0.41 H13 H23 0.40 H14 H34 H24 2600K 2700K H41 H31 H42 H43 H33 H44 0.39 0.44 0.45 0.46 0.47 0.48 CIE X H11 H21 H31 H41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4562 0.4260 0.4625 0.4275 0.4687 0.4289 0.4750 0.4304 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 0.4275 0.4687 0.4289 0.4750 0.4304 0.4810 0.4625 H12 H22 H32 0.4319 H42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 H13 H23 H33 H43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4373 0.3893 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4593 0.3944 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 H14 H24 Rev1.0, Mar 30, 2016 H34 15 H44 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Mechanical Dimensions Top View Bottom View Cathode Anode (+) Circuit Side View Cathode 1 Anode 2 ESD Protection Device (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.2mm Rev1.0, Mar 30, 2016 16 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only (4) Undefined tolerance is ±0.1mm Rev1.0, Mar 30, 2016 17 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev1.0, Mar 30, 2016 18 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Emitter Tape & Reel Packing Anode (+) ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : 4,500pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. Rev1.0, Mar 30, 2016 19 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Emitter Tape & Reel Packing Reel Aluminum Bag Outer Box Rev1.0, Mar 30, 2016 20 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Product Nomenclature Table 6. Part Numbering System : X1X2X3X4X5X6X7X8 Part Number Code Description Part Number Value X1 Company S X2 Top View LED series T X3X4 Color Specification W9 CRI 90 X5 Package series C C series X6X7 Characteristic code 12 X8 Revision B Table 7. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev1.0, Mar 30, 2016 Lot Number 21 Value www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev1.0, Mar 30, 2016 22 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant. The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 30℃ Humidity : less than RH60% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-24hr at 65±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. Rev1.0, Mar 30, 2016 23 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Precaution for Use (10) The appearance and specifications of the product may be modified for improvement without notice. (11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (13) Attaching LEDs, do not use adhesives that outgas organic vapor. (14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (15) Similar to most Solid state devices; LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev1.0, Mar 30, 2016 24 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev1.0, Mar 30, 2016 25 www.seoulsemicon.com Product Data Sheet STW9C12B – Mid-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.0, Mar 30, 2016 26 www.seoulsemicon.com