2N3668-2N3670, 2N4103 SILICON CONTROLLED RECTFIERS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol 2N3668 2N3669 2N3670 2N4103 Units VRM 150 330 660 700 V Peak repetitive reverse voltage VRRM 100 200 400 600 V Peak forward blocking voltage VFBOM 100 200 400 600 V Forward current for case temperature TC = +80°C @ average DC value at a conduction angle of 180° RMS value IFAV IFRMS 8 12.5 Peak surge current for one cycle of applied voltage 60 Hz (sinusoidal), TC = 80°C 50 Hz (sinusoidal), TC = 80°C IFM 200 200 170 A Fusing current (TJ = -40 to +100°C, t = 1 to 8.3ms) I2t 170 A2s di/dt 200 A/µs Non-repetitive peak reverse voltage Rate of change of forward current VFB = VBOO, IGT = 200mA, 0.5ns rise time A Peak gate power for 10ns duration PGM 40 W Average gate power PGAV 0.5 W Storage temperature Tstg -40 to +125 °C Operating case temperature TC -40 to +100 °C *Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible. * Temperature reference point is within 1/8” of the center of the underside of unit. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Peak repetitive blocking voltage @ TC = 100°C Forward peak blocking current @TC = 100°C, VD = VDROM Reverse peak blocking current @ TC = 100°C, VR = VRROM Forward voltage drop @ 25A TC = 25°C DC gate-trigger current @ TC = 25°C DC gate-trigger voltage @ TC = 25°C Holding current @ TC = 25°C Symbol 2N3668 2N3669 2N3670 2N4103 Units Min Typ Max Min Typ Max Min Typ Max Min Typ Max VDROM 100 - - 200 - - 400 - - 600 - - V IDOM - 0.2 2 - 0.25 2.5 - 0.3 3 - 0.35 4 mA IROM - 0.05 1 - 0.1 1.25 - 0.2 1.5 - 0.3 3 mA VF - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 V IGT 1 20 40 1 20 40 1 20 40 1 20 40 mA VGT - 1.5 2 - 1.5 2 - 1.5 2 - 1.5 2 V IH 0.5 25 50 0.5 25 50 0.5 25 50 0.5 25 50 mA dv/dt 10 100 - 10 100 - 10 100 - 10 100 - V/µs Critical rate of forward voltage VF = VBOO, exponential rise TC = 100°C Rev. 20130116 2N3668-2N3670, 2N4103 SILICON CONTROLLED RECTFIERS High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (@ maximum ratings and indicated case temperature (TC) Characteristic Symbol 2N3668 2N3669 2N3670 2N4103 Units Min Typ Max Min Typ Max Min Typ Max Min Typ Max ton - 1.25 - - 1.25 - - 1.25 - - 1.25 - µs toff - 20 50 - 20 50 - 20 50 - 20 50 µs RӨJC - - 1.7 - - 1.7 - - 1.7 - - 1.7 °C/W Turn-on time (delay time + rise time) VD = VDROM, IT = 8A, IG = 200mA, 0.1µs rise time, TC = 25°C Turn-off time (reverse recovery time + gate recovery time) IF = 8A, 50ns pulse width, dvFS/dt = 20V/µs, dir/dt = 30A/µs, IGT = 200mA, TC = 80°C Thermal resistance Junction to case MECHANICAL CHARACTERISTICS Case: TO-3 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130116 High-reliability discrete products and engineering services since 1977 Fig. 1 – Peak surge current vs. surge current duration 2N3668-2N3670, 2N4103 SILICON CONTROLLED RECTFIERS Fig. 2 - Instantaneous forward current vs. Instantaneous forward voltage drop Rev. 20130116 High-reliability discrete products and engineering services since 1977 2N3668-2N3670, 2N4103 SILICON CONTROLLED RECTFIERS Rev. 20130116