ROHM SST4401T116

SST4401 / MMST4401
Transistors
NPN Medium Power Transistor
(Switching)
SST4401 / MMST4401
zDimensions (Unit : mm)
zFeatures
1) BVCEO>40V (IC=1mA)
2) Complements the SST4403 / MMST4403.
SST4401
zPackage, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
MMST4401
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
Symbol
Limits
Unit
VCBO
VCEO
60
40
6
0.6
V
V
V
A
0.2
W
VEBO
IC
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
PC
0.35
Tj
Junction temperature
Tstg
Storage temperature
∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
W
150
−55 to +150
˚C
˚C
+
+
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
BVEBO
Min.
60
40
6
ICBO
−
IEBO
−
−
−
−
−
−
−
−
0.4
−
−
0.75
−
−
0.95
−
20
−
1.2
−
−
40
−
−
BVCBO
BVCEO
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
Typ.
Max.
−
−
−
0.1
0.1
80
−
100
−
−
300
40
−
−
Unit
Conditions
V
V
IC=100µA
V
µA
IE=100µA
VCB=35V
VEB=5V
µA
V
V
−
IC=1mA
IC/IB=150mA/15mA
IC/IB=500mA/50mA
IC/IB=150mA/15mA
IC/IB=500mA/50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IE= −20mA, f=100MHz
VCB=10V, f=100kHz
fT
250
Cob
Cib
−
−
−
−
6.5
MHz
pF
−
−
30
pF
VEB=0.5V, f=100kHz
td
−
−
15
ns
tr
tstg
tf
−
−
20
ns
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
−
−
225
ns
−
−
30
ns
VCC=30V, IC=150mA, IB1=-IB2=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA
Rev.B
1/3
SST4401 / MMST4401
Transistors
zElectrical characteristic curves
100
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
1000
600
DC CURRENT GAIN : hFE
500
400
50
Ta=25°C
VCE=10V
100
300
200
1V
100
IB=0µA
10
0.1
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : VCE(V)
10
COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.3 DC current gain vs. collector current(Ι)
Fig.1 Grounded emitter output
characteristics
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V)
1.0
1000
Ta=25°C
IC / IB=10
VCE=10V
DC CURRENT GAIN : hFE
0.3
25°C
100
0.1
0
1.0
10
100
COLLECTOR CURRENT : Ic(mA)
1000
−55°C
10
0.1
Fig.2 Collector-emitter saturation
voltage vs. collector current
1.0
AC CURRENT GAIN : hFE
Ta=25°C
VCE=10V
f=1kHz
100
1.0
10
COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.4 DC current gain vs. collector current(ΙΙ)
1000
10
0.1
10
COLLECTOR CURRENT : Ic(mA)
100
Fig.5 AC current gain vs. collector current
1000
BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)
0.2
Ta=125°C
1.8
1.6
Ta=25°C
IC / IB=10
1.2
0.8
0.4
0
1.0
10
100
COLLECTOR CURRENT : Ic(mA)
1000
Fig.6 Base-emitter saturation
voltage vs. collector current
Rev.B
2/3
SST4401 / MMST4401
1.6
1000
1.2
0.4
Ta=25°C
VCC=30V
IC / IB=10
100
100
0.8
VCC=30V
10V
10
1
10
100
COLLECTOR CURRENT : Ic(mA)
10
1.0
1000
Fig.7 Grounded emitter propagation
characteristics
1000
100
Fig.8 Turn-on time vs. collector
current
1000
10
100
COLLECTOR CURRENT : Ic(mA)
10
1.0
1000
100MHz 250MHz 300MHz
200MHz
10
1000
CURRENT GAIN-BANDWIDTH PRODUCT(MHz)
Ta=25°C
1000
1000
Fig.9 Rise time vs. collector
current
Ta=25°C
f=1MHz
Cib
Cob
10
1
0.1
1.0
10
REVERSE BIAS VOLTAGE(V)
100
Fig.12 Input / output capacitance
vs. voltage
Fig.11 Fall time vs. collector
current
Fig.10 Storage time vs. collector
current
100
10
100
COLLECTOR CURRENT : Ic(mA)
10
100
COLLECTOR CURRENT : Ic(mA)
100
Ta=25°C
VCC=30V
IC=10IB1=10IB2
100
10
1.0
5
1.0
1000
FALL TIME : tf(ns)
STORAGE TIME : ts(ns)
Ta=25°C
VCC=30V
IC=10IB1=10IB2
10
100
COLLECTOR CURRENT : Ic(mA)
CAPACITANCE(pF)
0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
500
Ta=25°C
IC / IB=10
RISE TIME : tr(ns)
Ta=25°C
VCE=10V
1.8
TURN ON TIME : ton(ns)
BASE EMITTER VOLTAGE : VBE(ON)(V)
Transistors
Ta=25°C
VCE=10V
100
1
250MHz
0.1
1
10
100
COLLECTOR CURRENT : Ic(mA)
1000
Fig.13 Gain bandwidth product
10
1.0
10
100
COLLECTOR CURRENT : Ic(mA)
1000
Fig.14 Gain bandwidth product
vs. collector current
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2007 ROHM CO.,LTD.
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Contact us : [email protected] rohm.co. jp
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Appendix1-Rev2.0