AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 40V 120A / 112A RDS(ON) (at VGS=10V) < 1.9mΩ RDS(ON) (at VGS=4.5V) < 2.5mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial Top View D TO-220 TO-220F G S AOT2142L AOTF2142L Orderable Part Number Package Type Form Minimum Order Quantity AOT2142L AOTF2142L TO-220 TO-220F Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current Avalanche Current C IDM TA=25°C Continuous Drain Current C VDS Spike L=0.3mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: December 2015 78 480 445 50 IAS 60 A EAS 540 mJ 48 41 156 20 8.3 TJ, TSTG Steady-State RθJA RθJC -55 to 175 AOT2142L(Max) 15 60 0.48 www.aosmd.com W W 5.3 Symbol Steady-State V 312 PDSM t ≤ 10s A A 40 PD Junction and Storage Temperature Range V 120 G VSPIKE TA=25°C Units V 112 IDSM TA=70°C Avalanche energy ±20 120 G ID TC=100°C AOTF2142L(Max) 40 VGS TC=25°C Pulsed Drain Current AOT2142L(Max) AOTF2142L(Max) 15 60 3.6 °C Units °C/W °C/W °C/W Page 1 of 7 AOT2142L/AOTF2142L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ±100 nA 2.3 V 1.55 1.9 2.25 2.8 VGS=4.5V, ID=20A 1.95 2.5 VDS=5V, ID=20A 100 gFS Forward Transconductance VSD IS IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G(AOT2142L) IS Maximum Body-Diode Continuous Current (AOTF2142L) 1.3 TJ=125°C 0.66 DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Gate resistance µA 5 1.8 Static Drain-Source On-Resistance Rg V TJ=55°C RDS(ON) Crss Units 1 VGS=10V, ID=20A Output Capacitance Max 40 VDS=40V, VGS=0V IDSS Coss Typ VGS=0V, VDS=20V, f=1MHz mΩ mΩ S 1 V 120 A 50 A 8320 pF 1438 pF 85 f=1MHz 0.5 1.15 pF 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 100 nC Qg(4.5V) Total Gate Charge 45 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 25 nC 7 nC 19 ns 7 ns 69 ns 10 ns IF=20A, dI/dt=400A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs 83 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: December 2015 www.aosmd.com Page 2 of 7 AOT2142L/AOTF2142L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 3.5V 100 4.5V 80 10V VDS=5V 100 80 ID(A) ID (A) 120 60 40 60 125°C 40 25°C 20 20 VGS=3V 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 1.8 3 RDS(ON) (mΩ) 2 VGS=4.5V 2 VGS=10V 1 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 3 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 125°C 1.0E-01 1.0E-02 2 25°C 1.0E-03 25°C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: December 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT2142L/AOTF2142L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=20V ID=20A Ciss 8000 Capacitance (pF) VGS (Volts) 8 6 4 2 6000 4000 Coss 2000 0 Crss 0 0 20 40 60 80 100 120 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1000 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited 10µs 100µs 800 1ms 10ms 10.0 Power (W) ID (Amps) 100.0 DC 1.0 0.1 40 TJ(Max)=175°C TC=25°C 0.0 0.01 600 400 200 0.1 1 10 VDS (Volts) 100 0 0.0001 0.001 1000 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase for AOT2142L (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area for AOT2142L (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.48°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2142L (Note F) Rev.2.0: December 2015 www.aosmd.com Page 4 of 7 AOT2142L/AOTF2142L 350 140 300 120 250 100 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 150 100 50 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating for AOT2142L (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating for AOT2142L (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PDM 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: December 2015 www.aosmd.com Page 5 of 7 AOT2142L/AOTF2142L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 140 120 Current rating ID(A) Power Dissipation (W) 40 30 20 10 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 16: Power De-rating for AOTF2142L (Note F) 25 50 75 100 RDS(ON) limited TJ(Max)=175°C TC=25°C 10µs 100µs 800 1ms 10ms 10.0 1.0 Power (W) ID (Amps) 175 1000 10µs 0.1 150 TCASE (°C) Figure 17: Current De-rating for AOTF2142L (Note F) 1000.0 100.0 125 DC TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 600 400 200 1 10 VDS (Volts) 100 0 0.0001 0.001 1000 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Single Pulse Power Rating Junction-toCase for AOTF2142L (Note F) VGS> or equal to 4.5V Figure 18: Maximum Forward Biased Safe Operating Area for AOTF2142L (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.6°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 20: Normalized Maximum Transient Thermal Impedance for AOTF2142L (Note F) Rev.2.0: December 2015 www.aosmd.com Page 6 of 7 AOT2142L/AOTF2142L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: December 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7