AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • RoHS and Halogen Free Compliant VDS Applications TM ID (at VGS=10V) 100V 105A RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.1mΩ ) RDS(ON) (at VGS=6V) < 5.3mΩ (< 4.9mΩ ∗) ∗ 100% UIS Tested 100% Rg Tested • Synchronous Rectification for power supply • Ideal for boost converters Top View TO-220 TO-263 TO-220F D D G G AOT292L D S G AOTF292L D S S AOB292L S G Orderable Part Number Package Type Form Minimum Order Quantity AOT292L AOTF292L AOB292L TO-220 TO-220F TO-263 Tube Tube Tape & Reel 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Avalanche Current C Avalanche energy L=0.1mH VDS Spike C 10µs TC=25°C Power Dissipation B Power Dissipation A 50 Junction and Storage Temperature Range 60 A EAS 180 mJ 120 Steady-State Steady-State 47 150 23 2.1 -55 to 175 AOT(B)292L °C AOTF292L 15 60 0.5 W W 1.3 RθJA RθJC V 300 TJ, TSTG Symbol t ≤ 10s A 11.5 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 14.5 IAS PD TA=25°C A 420 VSPIKE TC=100°C V 82 IDSM TA=70°C Units V 70 IDM TA=25°C Continuous Drain Current ±20 105 ID TC=100°C C AOTF292L 100 VGS TC=25°C Continuous Drain Current G** Pulsed Drain Current AOT(B)292L 3.2 Units °C/W °C/W °C/W * Surface mount package TO263 ** Package limited for TO220 & TO263 Rev.2.0: March 2016 www.aosmd.com Page 1 of 7 AOT292L/AOB292L/AOTF292L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C ±100 nA 2.8 3.4 V 3.7 4.5 6.1 7.4 VGS=6V, ID=20A TO220/TO220F 4.2 5.3 mΩ VGS=10V, ID=20A TO263 3.3 4.1 mΩ 3.8 90 4.9 mΩ S 0.68 1 V 105 A 50 A TO220/TO220F gFS Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS 2.3 Maximum Body-Diode Continuous Current(TO220/TO263) TJ=125°C G Maximum Body-Diode Continuous Current(TO220F) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 VGS=10V, ID=20A Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mΩ 6775 pF 557 pF 32 1.2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 90 126 nC Qg(4.5V) Total Gate Charge 40 60 nC VGS=10V, VDS=50V, ID=20A 0.4 pF 0.8 f=1MHz Ω Qgs Gate Source Charge 24 nC Qgd Gate Drain Charge 13.5 nC tD(on) Turn-On DelayTime 20 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 380 Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 11.5 ns 48 ns 10 ns 50 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: March 2016 www.aosmd.com Page 2 of 7 AOT292L/AOB292L/AOTF292L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 6V VDS=5V 4.5V 80 60 60 ID (A) ID (A) 80 40 40 4V 25°C 125°C 20 20 VGS=3.5V 0 0 0 1 2 3 4 0 5 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2 3 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 8 Normalized On-Resistance 2.2 6 RDS(ON) (mΩ) 1 VGS=6V 4 VGS=10V 2 2 VGS=10V ID=20A 1.8 1.6 1.4 VGS=6V ID=20A 1.2 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 12 1.0E+02 ID=20A 1.0E+01 1.0E+00 8 125°C 125°C IS (A) RDS(ON) (mΩ) 10 6 1.0E-01 1.0E-02 25°C 4 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: March 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT292L/AOB292L/AOTF292L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 9000 VDS=50V ID=20A Capacitance (pF) VGS (Volts) Ciss 7500 8 6 4 2 6000 4500 3000 1500 Coss Crss 0 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100 800 100µs DC 1ms 10ms 1.0 Power (W) ID (Amps) 80 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) limited TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 600 400 200 0 0.0001 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9A: Maximum Forward Biased Safe Operating Area for TO220 & TO263 (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10A: Single Pulse Power Rating Junction-toCase for TO220 & TO263 (Note F) 1000.0 1000 1ms DC 1.0 0.0 0.01 800 100µs 10.0 0.1 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited TJ(Max)=175°C TC=25°C 0.1 10ms 100ms 1s 600 400 200 1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9B: Maximum Forward Biased Safe Operating Area for TO220F (Note F) Rev.2.0: March 2016 Power (W) ID (Amps) 60 1000 10.0 100.0 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 20 0 0.0001 www.aosmd.com 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10B: Single Pulse Power Rating Junction-toCase for TO220F (Note F) Page 4 of 7 AOT292L/AOB292L/AOTF292L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 120 Power Dissipation (W) 300 100 Current rating ID (A) 250 200 150 100 80 60 40 20 50 0 0 0 25 50 75 100 125 150 175 0 50 100 40 80 30 20 10 50 75 100 125 150 175 TCASE (°C) Figure 12A: Current De-rating for TO220 & TO263 (Note F) Current rating ID (A) Power Dissipation (W) TCASE (°C) Figure 11A: Power De-rating for TO220 & TO263 (Note F) 25 0 60 40 20 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 11B: Power De-rating for TO220F (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 12B: Current De-rating for TO220F (Note F) 100000 TA=25°C Power (W) 10000 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Ambient (Note H) Rev.2.0: March 2016 www.aosmd.com Page 5 of 7 AOT292L/AOB292L/AOTF292L ZθJA Normalized Transient Thermal Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance (Note H) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 15A: Normalized Maximum Transient Thermal Impedance for TO220 & TO263 (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.2°C/W 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15B: Normalized Maximum Transient Thermal Impedance for TO220F (Note F) Rev.2.0: March 2016 www.aosmd.com Page 6 of 7 AOT292L/AOB292L/AOTF292L Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: March 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7