Reliability Report

AOS Semiconductor
Product Reliability Report
AOW2918,
rev A
100V N-Channel MOSFET
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOW2918. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOW2918 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power losses are minimized due to an extremely
low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft
recovery body diode. This device is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED backlighting.
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
AOW2918
Standard sub-micron
Middle voltage N channel process
Package Type
3 leads TO262
Lead Frame
Bare Cu
Die Attach
Soft solder
Bond wire
Al wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOW2918
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°
c
/85%RH +3 cycle
reflow@250°
c
Temp = 150°
c,
Vgs=100% of
Vgsmax
-
3 lots
627pcs
0
JESD22A113
168hrs
500 hrs
1000 hrs
1 lot
308pcs
0
JESD22A108
Temp = 150°
c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
77 pcs / lot
308pcs
0
JESD22A108
130 +/- 2°
c,
85%RH, 33.3 psi,
Vgs = 100% of
Vgs max
121°
c , 29.7psi,
RH=100%
100 hrs
(Note A*)
3 lots
77 pcs / lot
165pcs
0
JESD22A110
96 hrs
(Note A*)
3 lots
55 pcs / lot
231pcs
0
JESD22A102
(Note A*)
77 pcs / lot
-65°
c to 150°
c,
air to air,
250 / 500
cycles
0
JESD22A104
HTGB
HTRB
HAST
Pressure Pot
Temperature
Cycle
Lot
Attribution
Total
Sample size
Number
of
Failures
Reference
Standard
3 lots
(Note A*)
1 lot
3 lots
3 lots
(Note A*)
231pcs
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 7
MTTF = 15704 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOW2918). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
2
9
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
8
MTTF = 10 / FIT = 1.38 x 10 hrs = 15704 years
/ [2x (2x77x168+2x3x77x1000) x258] = 7
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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