AOS Semiconductor Product Reliability Report AOTF12N30, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOTF12N30. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOTF12N30 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AOTF12N30 Standard sub-micron 300V N-Channel MOSFET TO220F Bare Cu Soft Solder Al wire Epoxy resin with silica filler Up to Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size* Number of Failures Reference Standard MSL Precondition 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) - 4389 pcs 0 JESD22-A113 HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 770 pcs HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 770 pcs 96 hours 924 pcs 0 JESD22-A110 1000 hours 693 pcs 0 JESD22-A101 130°C , 85%RH, 33.3 psi, Vds = 80% of Vdsmax up to 42V 85°C , 85%RH, Vds = 80% of Vdsmax up to 100V HAST H3TRB 0 JESD22-A108 0 JESD22-A108 Autoclave 121°C , 29.7psi, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 Power 8572 924 pcs 0 AEC Q101 Tj = 100°C cycles Cycling *Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 4.16 MTTF = 27446 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 4.16 9 MTTF = 10 / FIT = 27446 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3