2669

NTE2669
Silicon NPN Transistor
Horizontal Deflection
High Speed Switch
TO3P Full Pack
Description:
The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed
Switching Applications.
Features:
D High Voltage
D Low Saturation Voltage
D High Speed
D Built−in Dampter Type
D Collector Metal (Fin) is Fully Covered with Mold Resin
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut−off Current
ICBO
VCB = 1700V, IE = 0
−
−
1
mA
Emitter Cut−off Current
IEBO
VEB = 5V, IC = 0
83
−
250
mA
Emitter−Base Breakdown Voltage
VEBO
IE = 400mA, IC = 0
5
−
−
V
VCE = 5V, IC 1A
8
−
25
VCE = 5V, IC 6A
4
−
8.5
DC Current Gain
hFE
Rev. 3−11
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Emitter Saturation Voltage
VCE (sat) IC = 6A, IB = 1.5A
−
−
3
V
Base−Emitter Saturation Voltage
VBE (sat)
IC = 6A, IB = 1.5A
−
.9
1.2
V
Forward Voltage (Damper Diode)
−VF
IF = 6A
−
1.45
1.8
V
VCE = 10V, IE 0.1A
−
2
−
MHz
pF
Transition Frequency
fT
Collector Output Capacitance
Cob
VCB = 10V, IE 0, f = 1MHz
−
185
−
Switching, Storage Time
tstg
ICP = 5A, IB1 (end) = 1A,
fH = 31.5kHz
−
4
6
−
0.2
0.5
Switching, Fall Time
tf
.217 (5.5)
.118 (3.0)
.610 (15.5)
.441
(11.2)
.906
(23.0)
.177
(4.5)
Isol
.965
(24.5)
B
1.709
(43.4)
Max
.079
(2.0)
.429 (10.9)
C
E
μs