NJG1155UX2 APPLICATION NOTE FOR LTE BAND-13 2fo IMPROVEMENT This application note shows an example in order to improve LTE band-13 2fo. The example of electrical characteristics are shown as follows: I ELECTRICAL CHARACTERISTICS (DC) General conditions: Ta=+25°C PARAMETER MEASURED DATA UNITS VDD 2.8 V Control Voltage (High) VCTL(H) 1.8 V Control Voltage (Low) VCTL(L) 0 V 3.58 mA 0.1 µA 5.9 µA Supply Voltage Supply Current1 (Active mode) Supply Current2 (Stand-by mode) Control Current SYMBOL IDD1 IDD2 ICTL CONDITIONS RF OFF, VDD=2.8V, VCTL=1.8V RF OFF, VDD=2.8V, VCTL=0V VCTL=1.8V I ELECTRICAL CHARACTERISTICS (RF) General conditions: VDD=2.8V, VCTL=1.8V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit MEASURED DATA PARAMETER Small Signal Gain Noise Figure Input Power at 1dB Gain Compression Point Input 3rd Order Intercept Point Out of Band Input 3rd Order Intercept Point SYMBOL Gain NF Exclude PCB and connector Losses (0.18dB) Exclude PCB and connector Losses (0.08dB) P-1dB(IN) IIP3 IIP3_OB UNITS CONDITIONS f1=fRF, f2=f1+/- 1MHz, Pin=-30dBm f1 =1712.7MHz Pin =-20dBm, f2 =1850MHz Pin =-20dBm Input jammer tone: 787.76MHz at –25dBm Measure the harmonic tone at 1575.52MHz Application Circuit 1 Application Circuit 2 18.7 18.7 dB 0.73 1.11 dB -12.3 -12.6 dBm -1.6 -2.1 dBm +0.9 +4.2 dBm -76.8 -123.3 dBm 700MHz Harmonic 2fo RF IN Port Return Loss RLi 10.7 9.5 dB RF OUT Port Return Loss RLo 18.5 10.8 dB -1- NJG1155UX2 Application Circuit 1 I BLOCK DIAGRAM (Top View) 4 L1 10nH 3 GND RFOUT RFIN VDD 5 RF IN RF OUT 2 VDD L2 36nH C1 1000pF C2 1.1pF VCTL VCTL GND 6 1 I EVALUATION BOARD (Top View) Parts list Parts ID RF IN C2 L2 Manufacture L1 LQG15HS Series (MURATA) L2 LQW15A Series (MURATA) C1, C2 GRM03 Series (MURATA) RF OUT C1 L1 PCB Information VCTL -2- VDD Substrate: FR-4 Thickness: 0.2mm Microstrip line width: 0.4mm (Z0=50Ω) Size: 14.0mm x 14.0mm NJG1155UX2 Application Circuit 1 I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50ohm, with application circuit S11, S22 VSWRi, VSWo S11, S22 (f=50M~20GHz) S21, S12 Zin, Zout S21, S12 (f=50M~20GHz) -3- NJG1155UX2 Application Circuit 2 I BLOCK DIAGRAM (Top View) 4 C2 0.6pF 3 GND RFOUT RFIN VDD 5 RF IN RF OUT 2 VDD L1 11nH C3 3.6pF C1 1000pF VCTL GND 6 VCTL 1 I EVALUATION BOARD (Top View) Parts list Parts ID C3 RF IN L1 Manufacture L1 LQW15A Series (MURATA) C1~C3 GRM03 Series (MURATA) RF OUT C1 C2 PCB Information VCTL -4- VDD Substrate: FR-4 Thickness: 0.2mm Microstrip line width: 0.4mm (Z0=50Ω) Size: 14.0mm x 14.0mm NJG1155UX2 Application Circuit 2 I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50ohm, with application circuit scale/div 10dB S11, S22 VSWRi, VSWo S11, S22 (f=50M~20GHz) S21, S12 Zin, Zout S21, S12 (f=50M~20GHz) -5- NJG1155UX2 I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50ohm, with application circuit 2fo vs. Pjam (fjam=787.76MHz, fmeas=1575.52MHz) 20 0 2fo (dBm) -20 -40 -60 -80 -100 NJRC standard circuit Application circuit 1 -120 -140 -40 Application circuit 2 -30 -20 -10 0 10 Pjam (dBm) MEASUREMENT BLOCK DIAGRAM Agilent E4425B Agilent E4440A BPF Signal Generator ATT 6dB fin=787.76MHz Pin=-25dBm BPF ATT 8dB Spectrum Analyzer fmeas=1575.52MHz f0=787.76MHz -6- NJG1155UX2 f0=1575.52MHz