Industry s First AEC-Q101-Qualified 12 V and 20 V MOSFETs in Dual Asymmetric Package for Automotive Synchronous Buck Applications

Product Group: Vishay Siliconix, MOSFETs / June 2016
Author: Mike Ward
Tel: 1 765.483.0219
E-mail: [email protected]
Industry’s First AEC-Q101-Qualified 12 V and 20 V
MOSFETs in Dual Asymmetric Package for
Automotive Synchronous Buck Applications
Product Benefits:
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AEC-Q101-qualified for automotive applications
Asymmetric dual MOSFETs are optimized for high-side and lowside synchronous buck applications
Compact 5 mm by 6 mm PowerPAK® SO-8L dual asymmetric
package occupies less board space and reduces parasitic
inductance and power losses
12 V (SQJ202EP) and 20 V (SQJ200EP) drain-to-source
voltages
Extremely low-side maximum on-resistance down to 3.3 mΩ at
VGS = 10 V
High-temperature operation to +175 °C
100 % tested for gate resistance and avalanche
RoHS-compliant and halogen-free
Market Applications:
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Synchronous buck converters for automotive applications, including infotainment, telematics, navigation,
and LED lighting
The News:
To save space and power in high-efficiency synchronous buck converters for automotive applications, Vishay
Intertechnology introduces the industry’s first AEC-Q101-qualified 12 V and 20 V MOSFETs in a dual
asymmetric package. The Vishay Siliconix SQJ202EP and SQJ200EP n-channel TrenchFET® devices each
combine a high- and low-side MOSFET in the compact 5 mm by 6 mm PowerPAK SO-8L dual asymmetric
package, with low-side maximum on-resistance down to 3.3 mΩ.
The Perspective:
By co-packaging two MOSFETs in an asymmetric package — with a larger low-side MOSFET for lower onresistance and smaller high-side MOSFET for faster switching — the 12 V SQJ202EP and 20 V SQJ200EP
provide high-performance alternatives to standard dual devices, which restrict the optimum combination of
MOSFETs for high-current, high-frequency buck designs. Compared to using discrete components, the
devices occupy less board space and can facilitate more compact PCB layouts.
Product Group: Vishay Siliconix, MOSFETs / June 2016
The devices offer high-temperature operation to +175 °C to provide the ruggedness and reliability required for
automotive applications. The SQJ202EP is well suited for applications with bus voltages ≤ 8 V and offers
extremely low maximum on-resistance down to 3.3 mΩ at VGS = 10 V for the Channel 2 low-side MOSFET. For
applications with higher bus voltages, the 20 V SQJ200EP features a slightly higher maximum on-resistance of
3.7 mΩ.
The Key Specifications:
Part number
Channel
VDS (V)
RDS(ON) (Ω)
Max.
Qg (nC) Typ.
ID(A)
@ VGS = 10 V
@ VGS = 4.5 V
@ VGS = 10 V
SQJ202EP
1
2
12
0.0065 0.0033
0.0093 0.0045
14.5
35.9
20
60
SQJ200EP
1
2
20
0.0088
0.0037
0.0124
0.0050
12
29
20
60
Availability:
Samples and production quantities of the SQJ200EP and SQJ202EP are available now, with lead times of 12
weeks for large orders.
To access the product datasheets on the Vishay website, go to
http://www.vishay.com/ppg?67774 (SQJ200EP)
http://www.vishay.com/ppg?62926 (SQJ202EP)
Contact Information:
THE AMERICAS
Vishay Americas
[email protected]
EUROPE
Vishay Electronic GmbH
[email protected]
ASIA/PACIFIC
Vishay Intertechnology Asia Pte Ltd.
[email protected]