384

NTE384
Silicon NPN Transistor
High Voltage Power Amp/Switch
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in
inverter applications.
Features:
D Maximum Safe–Area–of–Operation
D Low Saturation Voltages
D High Voltage Rating: VCER(sus) = 375V
D High Dissipation Rating: PT = 45W
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V
Collector–Emitter Sustaining Voltage
With Base Open, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
With Reverse Bias (VBE) of –1.5V, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V
With External Base–Emitter Resistance (RBE) ≤ 50Ω, VCER(sus) . . . . . . . . . . . . . . . . . . . 375V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL . . . . . . . +230°C
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC . . . . . . . . . . . . . . . . . 3.9°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Cutoff Current
Min
Typ
Max
Unit
VCE = 450V, VBE = –1.5V
–
–
0.5
mA
VCE = 450V, VBE = –1.5V, TC = +125°C
–
–
5.0
mA
VBE = –9V, IC = 0
–
–
1.0
mA
VCEO(sus) IC = 200mA, Note 1, Note 2
350
–
–
V
VCER(sus) IC = 200mA, RBE = 50Ω, Note 1, Note 2
375
–
–
V
IC = 0
9
–
–
V
VCE = 1V, IC = 1.2A, Note 1
12
28
50
IC = 1.2A, IB = 200mA, Note 1
–
1.0
1.6
V
IC = 4A, IB = 800mA, Note 1
–
1.3
2.0
V
IC = 1.2A, IB = 200mA, Note 1
–
0.15
0.5
V
IC = 4A, IB = 800mA, Note 1
–
0.5
3.0
V
pF
ICEV
Emitter–Cutoff Current
IEBO
Collector–Emitter Sustaining Voltage
Emitter–Base Voltage
VEBO
DC Forward Current
hFE
Base–Emitter Saturation Voltage
Collector–Emitter Saturation Voltage
VBE(sat)
VCE(sat)
Test Conditions
Output Capacitance
Cobo
VCB = 10V, f = 1MHz
–
–
150
Small–Signal Forward Current
Transfer Ratio
|hfe|
VCE = 10V, IC = 200mA, f = 1MHz
1
7
–
Second Breakdown Collector
Current
IS/b
VCE = 50V, with Base forward biased,
Pulse duration (non–repetitive) = 1sec
0.9
–
–
A
Second Breakdown Energy
ES/b
VBE = –4V, IC = 3A, with Base reverse
biased, RB = 50Ω, L = 100µH
0.45
–
–
mj
–
0.02
–
µs
–
0.3
0.75
µs
Delay Time
td
Rise Time
tr
Storage Time
ts
–
2.8
5.0
µs
Fall Time
tf
–
0.3
0.75
µs
VCC = 250V,
IB1 = IB2 = 200mA,
IC = 1.2A
Note 1. Pulsed: Pulse Duration ≤ 350µs, Duty Factor = 2%.
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360 (9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter
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