SMP1255PUTG N1749 REV.-

SMP1255PUTG
Technical Data
Data Sheet N1749 Rev.-
Green Products
Description
The SMP1255P integrates 3 channels of ultra-low capacitance steering diodes and a low voltage TVS diode to
provide maximum protection of the USB data and ID pins against ESD per the IEC61000-4-2 standard. An
additional 12V TVS diode is included to provide lightning surge protection for the USB VBUS pin up to 100A
(tP=8/20μs) per the IEC61000-4-5 standard. The SMP1255P provides superior protection for current intensive
applications such as fast charging peripharals.
The SMP1255P comes in a space saving 2.0x1.8mm μDFN package with a typical height of 0.55mm making it an
ideal solution for smart phones, tablets, and other portable electronics.
Features
Functional Block Diagram
For USB Voltage Bus Pin (VBUS)
• IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
• IEC 61000-4-5 (lightning) 100A (8/20μs)
• IEC 61000-4-4 (EFT) 80A (5/50ns)
• Protection for VBUS operating up to 12V
• Benchmark setting protection
• High current handling capability for fast charging
applications
For USB Data Pin (D+, D-, ID)
• IEC 61000-4-2 (ESD) ±15kV (air), ±12kV (contact)
• IEC 61000-4-5 (lightning) 4A (8/20μs)
• IEC 61000-4-4 (EFT) 40A (5/50ns)
• 0.5pF capacitance
• Low clamping voltage and dynamic resistance (0.3Ω)
Applications
•
•
•
•
Pinout
USB 2.0
USB OTG
μUSB
Protection for the VBUS circuit on USB2.0
Fast Charging
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SMP1255PUTG
Technical Data
Data Sheet N1749 Rev.-
Green Products
Ordering Information:
Device
Package
SMP1255PUTG
μDFN-6
Packaging
Options
Tape & Reel 8mm tape/7” reel
P0/P1
Packaging
Speciications
Min. Order
Qty.
2mm/4mm
EIA RS-481
3000
Absolute Maximum Ratings:
Parameter
Symbol
Value
Unit
Peak Current (tp=8/20μs)
IPP (Pin1)
100
A
Peak Current (tp=8/20μs)
IPP (Pin2-4)
4
A
TOP
-40 to + 125
°C
TSTOR
-55 to + 150
°C
Operating Temperature
Storage Temperature
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only
rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.
Electrical Characteristics: (TOP=25°C)
Characteristics
USB VBUS (Pin 1)
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage1
Symbol
VRWM
VBR
ILEAK
VF
VC
ESD With stand Voltage1
VESD
Diode Capacitance1
USB D+, D-, ID (Pin 2, 3, 4)
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
VRWM
VBR
Reverse Leakage Current
ILEAK
Clamping Voltage1
CD
VC
Dynamic Resistance
RDYN
ESD With stand Voltage1
VESD
Diode Capacitance1
CI/O-GND
Condition
Min.
Typ.
Max.
Units
Pin 1 to GND
IT=1mA, Pin 1 to GND
VR=12V, Pin 1 to GND
IF=10mA, GND to Pin 1
IPP = 30A, tp=8/20μs, Fwd
13
0.6
-
13.5
0.7
16.5
12
16.5
0.1
1.0
18
V
V
μA
V
V
IPP = 100A, tp=8/20μs, Fwd
-
19.5
25
V
±30
±30
-
1300
2500
kV
kV
pF
4.5
-
6.0
6.6
7.0
4
7.5
0.02
0.1
8.0
8.5
V
V
μA
-
0.3
-
Ω
±12
±15
-
0.5
0.6
kV
kV
pF
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Reverse Bias=0V, f=1 MHz
Pin 2, 3 and 4 to GND
IT=2μA, Pin 2, 3 and 4 to GND
VR=2V, Pin 2, 3 and 4 to GND
VR=4V, Pin 2, 3 and 4 to GND
IPP = 1A, tp=8/20μs, Fwd
IPP = 2A, tp=8/20μs, Fwd
TLP, tp=100ns, Pin 2, 3 and 4
to GND2
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Reverse Bias=0V, f=1 MHz
Note: 1. Parameter is guaranteed by design and/or device characterization.
2. Transmission Line Pulse (TLP) Test Setting: tP=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to t2=90ns
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V
V
SMP1255PUTG
Technical Data
Data Sheet N1749 Rev.-
Marking Diagram:
Green Products
Part Name Information
SMP 1255P U T G
A G3
○
G= Green
●
Where ○
A G3 is SMP1255PUTQ
T= Tape & Reel
A
○
= Product Series SMP1255P
Package
U =μDFN-6
G3
= Assembly Site
Series
TVS Diode Arrays
Capacitance vs. Reverse Bias (Pin1 to GND)
Clamping Voltage vs. Peak Pulse Current
(Pin1 to GND)
Capacitance vs. Reverse Bias
(Pin2, 3, 4 to GND)
Clamping Voltage vs. Peak Pulse Current
(Pin2, 3, 4 to GND)
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SMP1255PUTG
Technical Data
Data Sheet N1749 Rev.-
Non-Repetitive Peak Pulse Power vs. Pulse
Duration (Pin1 to GND)
Positive Transmission Line Pulsing (TLP) Plot
(Pin 2, 3, 4 to GND)
Green Products
Non-Repetitive Peak Pulse Power vs. Pulse
Duration (Pin2, 3, 4 to GND)
Negative Transmission Line Pulsing
(TLP) Plot (Pin 2, 3, 4 to GND)
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SMP1255PUTG
Technical Data
Data Sheet N1749 Rev.-
Green Products
Mechanical Dimensions —μDFN-6(1.8×2.0×0.55mm)
μDFN-6(1.8×2.0×0.55mm)
Top View
Symbol
PIN 1 DOT
BY MARKING
Side View
Bottom View
Recommended
Soldering
Footprint
PIN #1 IDENTIFICATION
CHAMFER 0.2
A
A1
A3
D
E
b
L
D2
E2
e
e1
B
C
F
G
J
N
P
X
Y
Z
JEDEC MO-229
Millimeters
Min
Typ Max
Min
0.50 0.55 0.60 0.020
0.00
0.05 0.000
0.15Ref
1.75 1.80 1.85 0.069
1.95 2.00 2.05 0.077
0.15 0.20 0.25 0.006
0.20 0.30 0.40 0.008
0.35 0.45 0.55 0.014
0.74 0.84 0.94 0.029
0.40 BSC
0.80 BSC
0.80 BSC
0.35 0.45 0.55 0.014
0.81 0.84 0.87 0.032
0.82 0.85 0.88 0.032
0.24 0.25 0.26 0.010
0.47 0.48 0.49 0.018
0.24 0.25 0.26 0.010
0.23 0.24 0.25 0.009
0.35 0.36 0.37 0.014
0.62 0.64 0.66 0.024
Inches
Typ
0.022
0.006Ref
0.071
0.079
0.008
0.012
0.018
0.033
0.016 BSC
0.031 BSC
0.031 BSC
0.018
0.033
0.033
0.010
0.019
0.010
0.009
0.014
0.025
Max
0.024
0.002
0.073
0.081
0.010
0.016
0.022
0.037
0.022
0.034
0.034
0.010
0.020
0.010
0.009
0.014
0.026
Embossed Carrier Tape & Reel Specification —μDFN-6
Symbol
Millimeters
A0
B0
D0
D1
E
F
K0
1.95+/-0.05
2.30+/-0.05
1.50+0.10
Φ 0.60+0.05
1.75+/-0.10
3.50+/-0.05
0.75+/-0.05
P0
2.00+/-0.05
P1
4.00+/-0.10
P2
4.00+/-0.10
T
0.25+/-0.02
W
8.00+0.30/-0.10
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SMP1255PUTG
Technical Data
Data Sheet N1749 Rev.-
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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