2995

NTE2995
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
Features:
D RDS(on) = 0.65Ω Typical
D Extremely High dv/dt Capability
D Gate Charge Minimized
D Gate−to−Source Zener Diode Protected
Applications:
D High Current, High Speed Switching
D Ideal for Off−Line Power Supplies, Adaptor and PFC
D Lighting
D
G
S
Absolute Maximum Ratings:
Drain−Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Drain−Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Total Power Dissiption (TC = +25°C), PTOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.92W/°C
Gate−Source ESD Voltage (HBM C = 100pF, R = 1.5kΩ), Vesd(G−S) . . . . . . . . . . . . . . . . . . . . . 4000V
Peak Diode Recovery Voltage Slope (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Avalanche Current, Repetitive or Non−Repetitive (Pulse Width Limited by TJmax), IAR . . . . . . . 9A
Single Pulse Avalanche Energy (Starting TJ = +25°C, ID = IAR, VDD = 50V), EAS . . . . . . . . . 300mJ
Repetitive Avalanche Energy (Pulse Width Limited by TJmax), EAR . . . . . . . . . . . . . . . . . . . . . 3.5mJ
Minimum Gate−Source Breakdown Voltage (IGS = ±1mA, Open Drain, Note 3), V(BR)GSO . . . . 30V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09°C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. Pulse width limited by safe operating area.
Note 2. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJmax.
Note 3. The built−in back−to−back Zener diodes have specifically been designed to enhance not
only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect their Zener voltage is appropriate to achieve an efficient and cost−effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
600
−
−
V
VDS = Max Rating
−
−
1
µA
VDS = Max Rating, TJ = +125°C
−
−
50
µA
VGS = ±15V, VDS = 0
−
−
±10
µA
3.0
3.75
4.5
V
ON/OFF
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
V(BR)DSS ID = 250µA, VGS = 0
IDSS
IGSS
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Static Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 4.5A
−
0.65
0.75
Ω
Dynamic
Forward Transconductance
gfs
VDS = 15V, ID = 4.5A, Note 4
−
7.8
−
S
Input Capacitance
Ciss
VDS = 25V, f = 1MHz, VGS = 0
−
1370
−
pF
Output Capacitance
Coss
−
156
−
pF
Reverse Transfer Capacitance
Crss
−
37
−
pF
Equivalent Output Capacitance
Coss eq.
VGS = 0, VDS = 0V to 480V, Note 5
−
90
−
pF
VDD = 480V, ID = 8A, VGS = 10V
−
50
70
nC
Total Gate Charge
Qg
Gate−Source Charge
Qgs
−
10
−
nC
Gate−Drain Charge
Qgd
−
25
−
nC
−
20
−
ns
−
20
−
ns
td(off)
−
55
−
ns
tf
−
30
−
ns
−
18
−
ns
−
18
−
ns
Switching ON/OFF
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Off−Voltage Rise Time
td(on)
tr
tr(Voff)
VDD = 300V, ID = 4A, RG = 4.7Ω,
VGS = 10V
VDD = 480V, ID = 8A, RG = 4.7Ω,
VGS = 10V
Fall Time
tf
Crossover Time
tc
−
36
−
ns
ISD
−
−
10
A
Source−Drain Diode
Source−Drain Current
Source−Drain Current, Pulsed
ISDM
Note 1
−
−
36
A
Forward ON Voltage
VSD
ISD = 10A, VGS = 0, Note 4
−
−
1.6
V
Reverse Recovery Time
trr
−
570
−
ns
Reverse Recovery Charge
Qrr
ISD = 8A, di/dt = 100A/µs,
VDD = 40V
40V, TJ = +150°C
−
4.3
−
µC
Reverse Recovery Current
IRRM
−
15
−
A
Note 1. Pulse width limited by safe operating area.
Note 4. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Note 5. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80%.
.420 (10.67) Max
.110
(2.79)
Tab
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250
(6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab
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