FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Features Applications SCIS Energy = 300mJ at TJ = 25oC Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 1 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT April 2012 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 400 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 300 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C 41 A IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C 25.6 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 150 W 1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -55 to +175 o C TSTG Storage Junction Temperature Range -55 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Reflow soldering according to JESD020C 260 o C ESD HBM-Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV CDM-Electrostatic Discharge Voltage at 1Ω 2 kV Package Marking and Ordering Information Device Marking FGD3040G2 Device FGD3040G2_F085 Package TO252 Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 370 400 430 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCE = 250V, RGE = 1KΩ - - 25 μA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, - - 1 - - 40 R1 Series Gate Resistance - 120 - Ω R2 Gate to Emitter Resistance 10K - 30K Ω ICER TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy,RG = 1KΩ, Self Clamped Inductive Switching ESCIS VGE = 5V, (Note 1) @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 2 TJ = 25oC - 1.15 1.25 V - 1.35 1.50 V TJ = 150oC - 1.68 1.85 V TJ = 25°C - - 300 mJ TJ = 150oC www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Test Conditions Parameter Min Typ Max Units - 21 - Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V o nC 1.3 1.7 2.2 0.75 1.2 1.8 VCE = 12V, ICE = 10A - 2.8 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 0.9 4 μs - 1.9 7 μs - 4.8 15 μs - 2.0 15 μs - - 1 oC/W VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25 C TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, Thermal Characteristics RθJC Thermal Resistance Junction to Case Notes: 1: Self Clamping Inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that starting Tj=25oC; L=3mHy, ISCIS=14.2A,VCC=100V during inductor charging and VCC=0V during the time in clamp. 2: Self Clamping Inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that starting Tj=150oC; L=3mHy, ISCIS=10.8A,VCC=100V during inductor charging and VCC=0V during the time in clamp. @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 3 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 100 RG = 1KΩ, VGE = 5V, VCE = 100V o TJ = 25 C o TJ = 150 C 10 1 SCIS Curves valid for Vclamp Voltages of <430V 1 10 100 tCLP, TIME IN CLAMP (μS) 1000 1.20 25 20 o TJ = 25 C 15 10 o TJ = 150 C 5 0 SCIS Curves valid for Vclamp Voltages of <430V 0 6 9 12 L, INDUCTANCE (mHy) 15 ICE = 10A 1.40 VGE = 4.0V VGE = 3.7V 1.30 VGE = 8V VGE = 5V 1.05 3 1.45 1.35 1.10 1.25 VGE = 4.5V VGE = 5V 1.20 VGE = 4.5V VGE = 8V 1.15 1.00 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) 1.10 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 30 1.50 VGE = 4.0V 1.15 35 Figure 2. Self Clamped Inductive Switching Current vs. Inductance ICE = 6A VGE = 3.7V RG = 1KΩ, VGE = 5V, VCE = 100V 40 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp 45 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = -40 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = 25 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs. Collector Current 4 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = 175 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 30 VCE = 5V 20 TJ = 25oC TJ = -40oC 0 1.0 VGS, GATE TO EMITTER VOLTAGE(V) ICE, DC COLLECTOR CURRENT (A) 35 30 25 20 15 10 5 0 25 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 175 10 o 8 VCE = 6V 6 VCE = 12V 4 2 0 0 LEAKAGE CURRENT (μA) VTH, THRESHOLD VOLTAGE (V) 1.6 1.4 1.2 50 60 Figure 11. Threshold Voltage vs. Junction Temperature VECS = 24V 1000 100 10 VCES = 300V 1 VCES = 250V 0.1 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 20 30 40 Qg, GATE CHARGE(nC) 10000 VCE = VGE ICE = 1mA -25 10 Figure 10. Gate Charge 2.0 1.0 -50 4.5 ICE = 10A, TJ = 25 C Figure 9. DC Collector Current vs. Case Temperature 1.8 1.5 2.0 2.5 3.0 3.5 4.0 VGE, GATE TO EMITTER VOLTAGE (V) Figure 8. Transfer Characteristics VGE = 5.0V 40 TJ = 175oC 10 Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 45 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) Figure 12. Leakage Current vs. Junction Temperature 5 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Typical Performance Curves (Continued) 12 2000 10 Resistive tOFF CAPACITANCE (pF) SWITCHING TIME (μS) ICE = 6.5A, VGE = 5V, RG = 1KΩ 8 Inductive tOFF 6 4 1600 CIES 1200 800 CRES 400 2 COES Resistive tON 0 25 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 0 175 Figure 13. Switching Time vs. Junction Temperature BVCER, BREAKDOWN VOLTAGE (V) f = 1MHz VGE = 0V 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 Figure 14. Capacitance vs. Collector to Emitter Voltage 430 ICER = 10mA 420 o TJ = -40 C 410 o TJ = 25 C 400 o TJ = 175 C 390 380 10 100 RG, SERIES GATE RESISTANCE (Ω) 1000 6000 Figure 15. Break down Voltage vs. Series Gate Resistance 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.20 0.10 0.1 0.01 -5 10 0.05 0.02 0.01 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 6 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Typical Performance Curves *Operation in this area is permitted during SCIS 100 ar d Pulse Operation * Pul ICE, COLLECTOR to EMITTER CURRENT (A) Operation in this area is limited by Vce(on) or transconductance 10us 10 100us 1 1ms 10ms *For Single Non Repetitive *For operation Single Non Repetitive Pulse Tj=175°C Tc=25°C Vge=5.0V Rev. 2.1 DC & 100ms 0.1 1 10 100 500 VCE, COLLECTOR to EMITTER VOLTAGE (V) Figure 17. Forward Safe Operating Area @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 7 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Typical Performance Curves L VCC R or L C PULSE GEN RG G LOAD C RG = 1KΩ DUT G + DUT 5V E VCC E Figure 18. Inductive Switching Test Circuit Figure 19. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L C VARY tP TO OBTAIN REQUIRED PEAK ISCIS ISCIS VCC + RG G VGE VCC DUT - E tP 0V ISCIS 0 0.01Ω tAV Figure 20. Energy Test Circuit @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 Figure 21. Energy Waveforms 8 www.fairchildsemi.com FGD3040G2_F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Test Circuit and Waveforms D-PAK 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 6.60 ±0.20 2.30 ±0.10 0.50 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 6.10 ±0.20 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] 0.89 ±0.10 MAX0.96 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 ® FGD3040G2_F085 EcoSPARK 2 300mJ, 400V, N-Channel Ignition IGBT Mechanical Dimensions 0.76 ±0.10 Dimensions in Millimeters @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 9 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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