TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 30 ± 24 875 600 TSHA5500 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHA5500 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 2.5 A PV 180 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.9, 24-Aug-11 Document Number: 81020 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA5500 www.vishay.com Vishay Semiconductors 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 0 10 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF MIN. 1.5 1.8 V IF = 1 A, tp = 100 μs VF 2.8 3.5 V IF = 100 mA TKVF - 1.6 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 16 30 128 240 mV/K 100 μA 48 mW/sr 20 pF IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms φe 24 mW IF = 20 mA TKφe - 0.7 %/K ϕ ± 24 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 875 Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1 A tr 300 ns IF = 100 mA tf 600 ns IF = 1 A tf 300 ns d 2.2 mm Rise time Fall time Virtual source diameter Rev. 1.9, 24-Aug-11 Document Number: 81020 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA5500 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 100 10 TSHA 5500 1 10 -1 10 -2 10 -1 10 0 10 1 t p - Pulse Duration (ms) 94 8003 10 0 10 2 10 4 1000 Φe - Radiant Power (mW) IF - Forward Current (mA) 10 3 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 tp = 100 µs tp/T= 0.001 10 3 10 2 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 8005 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 8015 e Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.6 1.2 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 10 2 IF - Forward Current (mA) 948014-1 Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 1 10 1 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0 - 10 0 10 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.9, 24-Aug-11 94 8020 50 100 140 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81020 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA5500 www.vishay.com Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φ e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 980 880 0.6 λ - Wavelenght (nm) 94 8000 10° 0.4 0.2 0 0.2 0.4 0.6 94 8016 e Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.4) 7.7 ± 0.15 8.7 ± 0.3 35.2 ± 0.55 12.2 ± 0.3 Ø 5.8 ± 0.15 A Area not plane 1.1 ± 0.25 1 min. Ø 5 ± 0.15 technical drawings according to DIN specifications 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 2.54 nom. 6.544-5258.08-4 Issue: 4; 19.05.09 14435 Rev. 1.9, 24-Aug-11 Document Number: 81020 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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