TSUS5400, TSUS5401, TSUS5402 Datasheet

TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
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94 8390
DESCRIPTION
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: λp = 950 nm
High reliability
Angle of half intensity: ϕ = ± 22°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
TSUS5400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
14
17
20
± 22
± 22
± 22
950
950
950
800
800
800
TSUS5400
TSUS5401
TSUS5402
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS5400
TSUS5401
TSUS5402
PACKAGING
REMARKS
PACKAGE FORM
Bulk
Bulk
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
T-1¾
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.8, 24-Aug-11
TEST CONDITION
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
SYMBOL
VALUE
UNIT
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
150
300
2.5
170
100
- 40 to + 85
- 40 to + 100
260
230
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81056
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
20
100
80
60
RthJA = 230 K/W
40
20
0
0
10
21313
20 30
40
50
60
70 80
90
0
100
0
Tamb - Ambient Temperature (°C)
21314
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.3
1.7
V
IF = 100 mA
TKVF
- 1.3
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
IF = 20 mA
TKφe
- 0.8
%/K
ϕ
± 22
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
d
2.9
mm
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
Rise time
Fall time
Virtual source diameter
MIN.
mV/K
100
μA
TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
IF = 1.5 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
Radiant intensity
IF = 1.5 A, tp = 100 μs
Radiant power
Rev. 1.8, 24-Aug-11
IF = 100 mA, tp = 20 ms
PART
SYMBOL
TYP.
MAX.
UNIT
TSUS5400
VF
MIN.
2.2
3.4
V
TSUS5401
VF
2.2
3.4
V
TSUS5402
VF
2.2
2.7
V
TSUS5400
Ie
7
14
35
mW/sr
TSUS5401
Ie
10
17
35
mW/sr
TSUS5402
Ie
15
20
35
TSUS5400
Ie
60
140
TSUS5401
Ie
85
160
mW/sr
TSUS5402
Ie
120
190
mW/sr
mW/sr
mW/sr
TSUS5400
φe
13
mW
TSUS5401
φe
14
mW
TSUS5402
φe
15
mW
Document Number: 81056
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Ie - Radiant Intensity (mW/sr)
I F - Forward Current (A)
10 1
I FSM = 2.5 A ( Single Pulse )
tp/T = 0.01
10 0
0.05
0.1
0.5
1.0
10 -1
-2
10
94 7989
TSUS 5401
TSUS 5402
100
TSUS5400
10
1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 0
10 2
10 1
10 2
10 3
I F - Forward Current (mA)
94 7997
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
Φ - Radiant Power (mW)
e
I F - Forward Current (mA)
1000
10 3
10 2
10 1
10 0
10 -1
0
1
2
3
4
TSUS 5402
100
TSUS5400
10
1
0.1
V F - Forward Voltage (V)
94 7996
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 7998
10 4
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.6
1.1
IF = 10 mA
1.2
1.0
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
1.2
0.9
IF = 20 mA
0.8
0.8
0.4
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
0
- 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Rev. 1.8, 24-Aug-11
Document Number: 81056
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
0°
I e rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
IF = 100 mA
0
900
80°
0.6
1000
950
λ - Wavelength (nm)
94 7994
0.4
0.2
0
0.2
0.4
0.6
94 7999
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
± 0.15
A
± 0.15
7.7
< 0.7
± 0.3
8.7
11.9
± 0.3
(4.1)
5.8
R 2.49 (sphere)
34.9
± 0.55
Area not plane
± 0.25
Ø 5 ± 0.15
1 min.
1.1
0.5
0.5
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
2.54 nom.
6.544-5258.01-4
Issue: 5; 19.05.09
96 12119
Rev. 1.8, 24-Aug-11
Document Number: 81056
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000