TSHF5210 Datasheet

TSHF5210
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
FEATURES
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94 8390
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: λp = 890 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 12 MHz
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
180
± 10
890
30
TSHF5210
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
TSHF5210
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
tp/T = 0.5, tp = 100 μs
Surge forward current
tp = 100 μs
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Rev. 1.4, 24-Aug-11
SYMBOL
VALUE
UNIT
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81313
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF5210
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21211
20 30
40
50
60
70 80
90
100
0
21212
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.4
1.6
IF = 1 A, tp = 100 μs
VF
2.3
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
Reverse current
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
PARAMETER
Forward voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
MIN.
180
V
V
mV/K
10
μA
360
mW/sr
125
120
UNIT
pF
IF = 1 A, tp = 100 μs
Ie
1800
IF = 100 mA, tp = 20 ms
φe
50
mW
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 10
deg
nm
Angle of half intensity
mW/sr
Peak wavelength
IF = 100 mA
λp
890
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
30
ns
Fall time
IF = 100 mA
tf
30
ns
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
d
3.7
mm
Cut-off frequency
Virtual source diameter
Rev. 1.4, 24-Aug-11
Document Number: 81313
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF5210
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tamb < 50 °C
tp/T = 0.01
1000
Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
1
0.5
100
0.01
0.1
0.1
1
10
100
tp - Pulse Duration (ms)
16031
1
10
100
Fig. 6 - Radiant Power vs. Forward Current
1.25
Φe rel - Relative Radiant Power
1000
100
tp = 100 µs
tp/T = 0.001
10
1.0
0.75
0.5
0.25
1
0
18873
1
3
2
VF - Forward Voltage (V)
0
800
4
1000
900
λ - Wavelength (nm)
20082
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
10 000
10°
20°
1000
100
tP = 0.1 ms
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
30°
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
1000
IF - Forward Current (mA)
16971
Fig. 3 - Pulse Forward Current vs. Pulse Duration
IF - Forward Current (mA)
10
e-
0.2
100
80°
1
1
21213
10
100
1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.4, 24-Aug-11
0.6
0.4
0.2
0
15989
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81313
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF5210
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
R 2.49 (sphere)
< 0.7
(4.7)
7.7 ± 0.15
8.7 ± 0.3
35.5 ± 0.55
12.5 ± 0.3
Ø 5.8 ± 0.15
A
Area not plane
1.1 ± 0.25
1 min.
Ø 5 ± 0.15
0.15
0.5 +- 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5258.02-4
Issue: 7; 23.07.10
95 10916
Rev. 1.4, 24-Aug-11
Document Number: 81313
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000