78

NTE78
Silicon NPN Transistor
RF Power Output
Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power
amplifiers in HF band mobile radio applications.
Features:
D High Power Gain
D Emitter Ballasted Construction for High Reliability and Good Performance
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage (RBE = 10Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
5
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
75
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CER IC = 10mA, RBE = 10Ω
75
–
–
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
–
–
100
µA
Emitter Cutoff Current
IEBO
VEB = 3V, IC = 0
–
–
100
µA
DC Forward Current Gain
hFE
VCE = 10V, IC = 100mA, Note 1
35
70
180
Output Power
PO
VCC = 12V, Pin = 250mW, f =
27MHz
6.0
7.5
–
W
Collector Efficiency
ηC
55
60
–
%
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
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