TSFF5510 Datasheet

TSFF5510
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
•
•
•
•
21061
High reliability
High radiant power
High radiant intensity
Angle of half intensity:  = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
DESCRIPTION
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high data
transmission rates
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
32
± 38
870
15
TSFF5510
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSFF5510
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.3, 23-Aug-11
TEST CONDITION
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t  5 s, 2 mm from case
J-STD-051, leads 7 mm soldered on PCB
SYMBOL
VALUE
UNIT
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81835
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFF5510
www.vishay.com
Vishay Semiconductors
120
200
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21142
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.3
1.45
1.7
V
IF = 450 mA, tp = 100 μs
VF
1.5
1.75
2.1
V
IF = 1 A, tp = 100 μs
VF
2.1
V
IF = 1 mA
TKVF
- 1.8
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
Radiant power
IF = 100 mA, tp = 20 ms
e
55
mW
IF = 100 mA
TKe
- 0.35
%/K

± 38
deg
nm
Junction capacitance
Temperature coefficient of e
Angle of half intensity
10
μA
48
mW/sr
110
16
32
pF
Peak wavelength
IF = 100 mA
p
870
Spectral bandwidth
IF = 100 mA

55
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
Cut-off frequency
Rev. 1.3, 23-Aug-11
Document Number: 81835
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFF5510
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tamb < 50 °C
tp/T = 0.01
1000
φe - Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
0.2
0.5
100
0.01
100
10
0.1
0.1
1
10
1
100
21062
tp - Pulse Duration (ms)
16031
100
1000
1.25
Φe, rel - Relative Radiant Power
10
IF - Forward Current (A)
10
IF - Forward Current (mA)
Fig. 5 - Radiant Power vs. Forward Current
Fig. 2 - Pulse Forward Current vs. Pulse Duration
1
0.1
0.01
1.00
0.75
0.50
0.25
0
750
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
VF - Forward Voltage (V)
21009
790
830
870
910
950
λ - Wavelength (nm)
21011
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
1.1
Ie, rel - Relative Radiant Intensity
1000
Ie - Radiant Intensity (mW/sr)
tp = 100 µs
tp/T = 0.002
1
100
10
1
tp = 100 µs
tp/T = 0.002
21010
10
100
1000
IF - Forward Current (mA)
Fig. 4 - Radiant Intensity vs. Forward Current
Rev. 1.3, 23-Aug-11
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 90 - 70 - 50 - 30 - 10 0 10
0.1
1
1.0
0.9
21012
30
50
70
90
Angle (°)
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81835
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFF5510
www.vishay.com
Vishay Semiconductors
Ø 5.9 ± 0.15
PACKAGE DIMENSIONS in millimeters
SR2.35
(1.72)
3.8 ± 0.15
C
9.5 ± 0.3
4.4 ± 0.3
A
Area not plane
1.1 ± 0.25
1 min.
31.4 ± 0.55
Ø 4.8 ± 0.15
+ 0.15
0.5 - 0.05
2.54 nom.
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5390.01-4
Issue: 2; 19.05.09
20796
Rev. 1.3, 23-Aug-11
Document Number: 81835
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000